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1. 发明授权

US07972398B2 Polishing composition for glass substrate 有权
标题翻译：玻璃基材抛光组合物
公开(公告)号：US07972398B2
公开(公告)日：2011-07-05
申请号：US11808738
申请日：2007-06-12
申请人： Kazuhiko Nishimoto , Toshiaki Oi
发明人： Kazuhiko Nishimoto , Toshiaki Oi
IPC分类号： C03C19/00 , C09G1/02
CPC分类号： C09G1/02
摘要： The present invention provides a polishing composition for a glass substrate having a pH of from 1 to 5 and containing silica particles having an average particle size of from 5 to 100 nm, wherein, in a projected image of the silica particles obtainable by an image analysis of electron photomicrographs, an average of an area ratio R of a projected area of the silica particles (A1) to an area of a maximum inscribed circle of the silica particles (A), i.e. (A1/A), is in the range of from 1.2 to 3.0, and the silica particles have an average of 2.0 to 10 projection portions having a curvature radius of from ⅕ to ½ of a radius of the maximum inscribed circle of the silica particles (r) on the outline of the silica particles in the projected image, and a method for manufacturing a glass substrate, including the step of polishing a substrate to be polished with a polishing load of from 3 to 12 kPa and at a pH of from 1 to 5 while allowing the polishing composition to be present between a polishing pad and the substrate to be polished. The polishing composition for a glass substrate of the present invention can be suitably used, for example, in the manufacture of glass hard disks, aluminosilicate glass for reinforced glass substrates, glass ceramic substrates (crystallized glass substrates), and the like.
摘要翻译：本发明提供一种pH为1〜5的玻璃基板用的研磨用组合物，其含有平均粒径为5〜100nm的二氧化硅粒子，其中，在通过图像分析得到的二氧化硅粒子的投影图像中，的电子显微照片，二氧化硅粒子（A1）的投影面积与二氧化硅粒子（A）的最大内接圆面积的平均面积比R（即（A1 / A））在 1.2至3.0，二氧化硅颗粒平均具有2.0至10个凸起部分，其具有二氧化硅颗粒（r）的二氧化硅颗粒（r）的最大内接圆的半径的半径为⅕至1/2的二氧化硅颗粒轮廓的半径投影图像和玻璃基板的制造方法，包括以3〜12kPa的抛光负荷和1〜5的pH值抛光抛光用基板的步骤，同时使抛光组合物存在在ap之间衬垫和待抛光的基材。本发明的玻璃基板用抛光组合物可以适用于例如制造玻璃硬盘，强化玻璃基板用硅铝酸盐玻璃，玻璃陶瓷基板（结晶玻璃基板）等。

2. 发明申请

US20080006057A1 Polishing composition for glass substrate 有权
标题翻译：玻璃基材抛光组合物
公开(公告)号：US20080006057A1
公开(公告)日：2008-01-10
申请号：US11808738
申请日：2007-06-12
申请人： Kazuhiko Nishimoto , Toshiaki Oi
发明人： Kazuhiko Nishimoto , Toshiaki Oi
IPC分类号： B24B1/00 , C09K3/14
CPC分类号： C09G1/02
摘要： The present invention provides a polishing composition for a glass substrate having a pH of from 1 to 5 and containing silica particles having an average particle size of from 5 to 100 nm, wherein, in a projected image of the silica particles obtainable by an image analysis of electron photomicrographs, an average of an area ratio R of a projected area of the silica particles (A1) to an area of a maximum inscribed circle of the silica particles (A), i.e. (A1/A), is in the range of from 1.2 to 3.0, and the silica particles have an average of 2.0 to 10 projection portions having a curvature radius of from ⅕ to ½ of a radius of the maximum inscribed circle of the silica particles (r) on the outline of the silica particles in the projected image, and a method for manufacturing a glass substrate, including the step of polishing a substrate to be polished with a polishing load of from 3 to 12 kPa and at a pH of from 1 to 5 while allowing the polishing composition to be present between a polishing pad and the substrate to be polished. The polishing composition for a glass substrate of the present invention can be suitably used, for example, in the manufacture of glass hard disks, aluminosilicate glass for reinforced glass substrates, glass ceramic substrates (crystallized glass substrates), and the like.
摘要翻译：本发明提供一种pH为1〜5的玻璃基板用的研磨用组合物，其含有平均粒径为5〜100nm的二氧化硅粒子，其中，在通过图像分析得到的二氧化硅粒子的投影图像中，的电子显微照片，二氧化硅粒子（A1）的投影面积与二氧化硅粒子（A）的最大内接圆面积的平均面积比R（即（A1 / A））在 1.2〜3.0，二氧化硅粒子的二氧化硅粒子（r）的最大内切圆的半径的曲率半径为二分之一的1/10至1/2的平均值为2.0〜10个，投影图像中的粒子，以及玻璃基板的制造方法，其特征在于，包括以3〜12kPa的抛光负荷和1〜5的pH值抛光抛光用基板的工序，在ap之间存在衬垫和待抛光的基材。本发明的玻璃基板用抛光组合物可以适用于例如制造玻璃硬盘，强化玻璃基板用硅铝酸盐玻璃，玻璃陶瓷基板（结晶玻璃基板）等。

3. 发明申请

US20120108064A1 POLISHING COMPOSITION FOR SILICON WAFERS 有权
标题翻译：硅砂抛光组合物
公开(公告)号：US20120108064A1
公开(公告)日：2012-05-03
申请号：US13382839
申请日：2010-07-05
申请人： Masahiko Suzuki , Mami Okamura , Toshiaki Oi
发明人： Masahiko Suzuki , Mami Okamura , Toshiaki Oi
IPC分类号： H01L21/302 , C09G1/02
CPC分类号： H01L21/02024 , B24B37/044 , C09G1/02
摘要： A polishing composition for a silicon wafer includes a macromolecular compound, an abrasive, and an aqueous medium. The macromolecular compound includes a constitutional unit (a1) represented by the following general formula (1), a constitutional unit (a2) represented by the following general formula (2), and a constitutional unit (a3) represented by the following general formula (3). The total of the constitutional unit (a3) is 0.001 to 1.5 mol % of all the constitutional units of the macromolecular compound.
摘要翻译：用于硅晶片的抛光组合物包括高分子化合物，研磨剂和水性介质。高分子化合物包括由以下通式（1）表示的结构单元（a1），由以下通式（2）表示的结构单元（a2）和由以下通式表示的结构单元（a3） 3）。结构单元（a3）的总和为大分子化合物的全部构成单元的0.001〜1.5摩尔％。

4. 发明授权

US08926859B2 Polishing composition for silicon wafers 有权
标题翻译：硅片抛光组合物
公开(公告)号：US08926859B2
公开(公告)日：2015-01-06
申请号：US13382839
申请日：2010-07-05
申请人： Masahiko Suzuki , Mami Okamura , Toshiaki Oi
发明人： Masahiko Suzuki , Mami Okamura , Toshiaki Oi
IPC分类号： C09K13/00 , H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , H01L21/02 , B24B37/04 , C09G1/02
CPC分类号： H01L21/02024 , B24B37/044 , C09G1/02
摘要： A polishing composition for a silicon wafer includes a macromolecular compound, an abrasive, and an aqueous medium. The macromolecular compound includes a constitutional unit (a1) represented by the following general formula (1), a constitutional unit (a2) represented by the following general formula (2), and a constitutional unit (a3) represented by the following general formula (3). The total of the constitutional unit (a3) is 0.001 to 1.5 mol % of all the constitutional units of the macromolecular compound.
摘要翻译：用于硅晶片的抛光组合物包括高分子化合物，研磨剂和水性介质。高分子化合物包括由以下通式（1）表示的结构单元（a1），由以下通式（2）表示的结构单元（a2）和由以下通式表示的结构单元（a3） 3）。结构单元（a3）的总和为大分子化合物的全部构成单元的0.001〜1.5摩尔％。

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