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    • 1. 发明申请
    • Synchronous transmission network system
    • 同步传输网络系统
    • US20060039347A1
    • 2006-02-23
    • US10992079
    • 2004-11-19
    • Kazuhiko NakamuraMasayuki KogaJunji OnoHiroki Hamachi
    • Kazuhiko NakamuraMasayuki KogaJunji OnoHiroki Hamachi
    • H04J3/06
    • H04J3/0647H04J3/0641H04J3/0679H04J3/14
    • A synchronous transmission network system has a plurality of nodes including a plurality of clock supply nodes and all the nodes synchronize with a clock supplied from one of clock supply nodes as a master, wherein each clock supply node includes a transmission module for transmitting a quality request message toward all other nodes, a receiving module for receiving quality response messages from all the other nodes, a quality determination module for determining clock supply quality information, a notifying module for notifying other clock supply node serving as the master of the clock supply quality information, and a node determination module for determining an optimum clock supply node exhibiting the best clock supply quality on the basis of the notified clock supply quality information and the clock supply quality information of the self-node.
    • 同步传输网络系统具有包括多个时钟供应节点的多个节点,并且所有节点与从时钟供应节点之一提供的时钟作为主机同步,其中每个时钟供应节点包括用于发送质量请求的传输模块 向所有其他节点发送消息,用于从所有其他节点接收质量响应消息的接收模块,用于确定时钟供应质量信息的质量确定模块,用于通知作为时钟供应质量信息的主机的其他时钟供应节点的通知模块 以及节点确定模块,用于基于通知的时钟供应质量信息和自身节点的时钟供应质量信息来确定呈现最佳时钟供应质量的最佳时钟供应节点。
    • 2. 发明授权
    • Film sensitivity setting and display device for a camera
    • 相机的胶片感光度设定和显示装置
    • US5734940A
    • 1998-03-31
    • US584011
    • 1996-01-11
    • Yukikazu IwaneYoshikazu IidaKiyosada MachidaMasayuki Koga
    • Yukikazu IwaneYoshikazu IidaKiyosada MachidaMasayuki Koga
    • G03B7/24G03B7/00G03B17/00
    • G03B7/24
    • A camera adapted to obtain a correct exposure, even with a film having a film sensitivity outside an automatic setting range of the camera. A film sensitivity outside the automatic setting range of the camera is stored, or canceled by manipulating a manipulation member in a manipulation order that differs from that used during photography. Further, two manipulation members may be used in a combined manipulation order that differs from that used during photography. For example, a zoom up and a zoom down switch may be used in conjunction with a main switch to set a higher and a lower, respectively, film sensitivity. Additionally, the setting may be canceled by manipulating the zoom up and zoom down switches simultaneously. A display device which normally displays photographic information regarding the camera, temporarily displays the manually set film sensitivity.
    • 即使在摄像机的自动设置范围之外的胶片具有胶片敏感度的照相机也适用于获得正确的曝光。 相机的自动设定范围以外的胶片感光度通过以与摄影时使用的操作顺序不同的操作顺序操纵操作部件来存储或取消。 此外,可以以与摄影期间使用的操作顺序不同的组合操作顺序使用两个操纵构件。 例如,放大和缩小开关可以与主开关一起使用,以分别设置较高和较低的胶片感光度。 另外,可以通过同时操纵放大和缩小开关来取消设置。 通常显示关于照相机的照相信息的显示装置暂时显示手动设定的胶片感光度。
    • 8. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US06841827B2
    • 2005-01-11
    • US10210181
    • 2002-08-02
    • Masayuki Koga
    • Masayuki Koga
    • H01L21/8246H01L27/112H01L29/786H01L27/12G11C17/00
    • H01L27/11226H01L27/112H01L27/11266
    • Information is not written in through channel dope, but through the difference of ions implanted into the impurity region of a semiconductor layer. Each memory element has a pair of the thin film transistors. The memory element with “1” written on it and the memory element with “0” written on it are differentiated based on whether the thin film transistors of the pair belongs to the same conductivity type or different conductivity types. Also, when the write-in impurity region is formed adjacent the impurity region, it is possible to differentiate the memory elements based on whether a diode connected to the thin film transistor in series is formed or not. Since these elements can be produced without the ion-implantation through the gate electrode, it is possible to build a mask ROM on the glass substrate. Also, it is possible to differentiate the memory elements based on whether wiring contact holes are formed in the thin film transistor or not. This invention enables the formation of the memory element on the glass substrate to fabricate a mask ROM.
    • 信息不是通过通道掺杂而是通过注入到半导体层的杂质区域中的离子的差异来写入的。 每个存储元件具有一对薄膜晶体管。 写在其上的具有“1”的存储元件和写在其上的具有“0”的存储元件基于该对的薄膜晶体管是否属于相同的导电类型或不同的导电类型而被区分。 此外,当写入杂质区域形成在杂质区域附近时,可以基于连接到串联的薄膜晶体管的二极管是否形成来区分存储元件。 由于这些元件可以在没有通过栅电极的离子注入的情况下产生,因此可以在玻璃基板上构建掩模ROM。 此外,可以根据薄膜晶体管中是否形成布线接触孔来区分存储元件。 本发明能够在玻璃基板上形成记忆元件以制造掩模ROM。