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    • 3. 发明授权
    • Voltage dependent nonlinear resistor
    • 电压相关非线性电阻
    • US4290041A
    • 1981-09-15
    • US9777
    • 1979-02-06
    • Kazuaki UtsumiNobuaki ShohataTomeji Ohno
    • Kazuaki UtsumiNobuaki ShohataTomeji Ohno
    • H01C7/10C04B35/453H01C7/102
    • H01C7/102
    • A "varistor" or voltage-dependent nonlinear resistor employs a ceramic base body having a voltage-dependent nonlinearity. First and second lead-out electrode layers are formed on first and second external surfaces, respectively, of the ceramic base body. Within and enclosed by the ceramic base body, a plurality of internal electrodes extend in parallel with each other and connect to the external lead-out electrodes. Also, the invention provides a method of manufacturing the voltage-dependent nonlinear resistor comprising the steps of forming a plurality of raw sheets of material, each having the desired voltage-dependent nonlinearity characteristics, after sintering. Internal electrodes of conducting material are printed on each of these sheets. The sheets are then laminated, cut and formed with external electrodes connecting the internal electrode to each other.
    • “压敏电阻”或电压依赖型非线性电阻采用具有电压依赖性非线性的陶瓷基体。 第一和第二引出电极层分别形成在陶瓷基体的第一和第二外表面上。 在陶瓷基体内并由陶瓷基体包围的多个内部电极彼此平行地延伸并连接到外部引出电极。 此外,本发明提供一种制造依赖于电压的非线性电阻器的方法,包括以下步骤:在烧结之后形成多个具有期望的电压依赖性非线性特性的材料原料片。 导电材料的内部电极印刷在每个这些片材上。 然后将片材层压,切割并形成有将内部电极彼此连接的外部电极。
    • 8. 发明授权
    • Nonohmic ZnO ceramics including Bi.sub.2 O.sub.3, CoO, MnO, Sb.sub.2 O.sub.
3
    • 包括Bi(hd 2 {b O {HD 3 {B,CoO,MnO,Sb(hd 2 {b O {HD 3 {B,和硼硅酸盐Pb和/或Zn玻璃组分
    • US4147670A
    • 1979-04-03
    • US746425
    • 1976-12-01
    • Nobuaki ShohataTomeji OhnoShigeru IkedaTakaki FukushimaRyuji IgarashiJyun-Ichiro Yoshida
    • Nobuaki ShohataTomeji OhnoShigeru IkedaTakaki FukushimaRyuji IgarashiJyun-Ichiro Yoshida
    • C04B35/453H01C7/112H01B1/08
    • H01C7/112C04B35/453
    • Nonohmic ZnO ceramics including the following additives have the voltage nonlinear exponent .alpha. of 30 or more, the dielectric constant .epsilon. of about 1000 or less, the loss factor (tan .delta.) of less than 10%, and small variations caused in the breakdown voltage V.sub.i by load and large current pulses. The additives listed by molecular formulae are given in % by mol. The glass components are given for Nos. 1 through 4 in % by weight, symbols of elements being representative of borosilicate lead and/or zinc glass.______________________________________ No. Bi.sub.2 O.sub.3 CoO MnO Sb.sub.2 O.sub.3 Glass Component ______________________________________ 1. 0.1-10 0.05-10 0.25-4 0.05-6 0.1-10 (Pb-Zn) 2. 0.1-6 0.05-10 0.25-10 0.1-10 0.1-10 (Zn) 3. 0.1-6 0.05-10 0.23-4 0.05-6 0.1-3 (Pb) 4. 0.1-6 0.05-10 0.2-10 0.1-6 0.1-10 (Zn and others) ______________________________________ As a fifth embodiment, the oxides corresponding or equivalent to a lead-borosilicate glass (PbO, B.sub.2 O.sub.3 and SiO.sub.2) may be included in certain amounts with varying amounts of zinc oxide as a major component along with Bi.sub.2 O.sub.3, CoO, MnO and Sb.sub.2 O.sub.3.
    • 包括以下添加剂的非欧姆ZnO陶瓷的电压非线性指数α为30以上,介电常数ε为约1000以下,损耗因子(tanδ)小于10%,以及击穿电压Vi 通过负载和大电流脉冲。 分子式列出的添加剂以摩尔%计。 玻璃组分以重量%计为1至4,元素符号代表硼硅酸铅和/或锌玻璃。 }没有。 Bi2O3 CoO MnO Sb2O3玻璃成分} 1。 0.1-10 0.05-10 0.25-4 0.05-6 0.1-10(Pb-Zn)} 2。 0.1-6 0.05-10 0.25-10 0.1-10 0.1-10(Zn)} 3。 0.1-6 0.05-10 0.23-4 0.05-6 0.1-3(Pb)} 4。 0.1-6 0.05-10 0.2-10 0.1-6 0.1-10(Zn等)}作为第五个实施方案,可以以一定量包含与硼硅酸铅玻璃(PbO,B2O3和SiO2)相当或相当的氧化物 随着Bi2O3,CoO,MnO和Sb2O3的含量不同,氧化锌为主要成分。