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    • 1. 发明授权
    • Method of manufacturing compound semiconductor
    • 制造化合物半导体的方法
    • US5432124A
    • 1995-07-11
    • US268526
    • 1994-07-06
    • Kazuaki NishikataYuji HirataniMichinori Irikawa
    • Kazuaki NishikataYuji HirataniMichinori Irikawa
    • C30B23/02H01L21/20
    • C30B23/02C30B29/40
    • There is provide a method of manufacturing a compound semiconductor (MBE) that can make the substrate surface of the semiconductor highly clean and plane so that no impurity may be left between the substrate surface and the grown crystal layer. In the step of cleaning a substrate with MBE, the substrate surface is irradiated with V molecular beams that cannot be significantly deposited out of molecular beams to be used for the crystal growth step, said V molecular beams being irradiated under a condition of P.sub.1 .ltoreq.(P.sub.2 .times.1/2), where P.sub.1 is the pressure of V molecular beams and P.sub.2 is the pressure of molecular beams in the crystal growth step and the temperature of the substrate surface is raised by heating until stabilized group III surfaces appear on the substrate surface. A very cleanand smooth substrate surface can be obtained with such an arrangement. Harmful impurities can be completely eliminated from the interface of the substrate and the crystal. The formation of a buffer layer can be effectively prevented in the initial stages of crystal growth. In short, high-quality compound semiconductors can be produced on a reliable basis.
    • 提供一种制造化合物半导体(MBE)的方法,其可以使半导体的衬底表面高度清洁并且平面,使得在衬底表面和生长的晶体层之间不会留下杂质。 在用MBE清洗衬底的步骤中,用不能显着沉积在用于晶体生长步骤的分子束中的V分子束照射衬底表面,所述V分子束在P1 < =(P2x1 / 2),其中P1是V分子束的压力,P2是晶体生长步骤中的分子束的压力,并且通过加热升高基板表面的温度直到稳定的III族表面出现在基板表面上 。 可以通过这种布置获得非常干净和光滑的基底表面。 可以从基板和晶体的界面完全消除有害的杂质。 在晶体生长的初始阶段可以有效地防止形成缓冲层。 总之,高质量的化合物半导体可以在可靠的基础上生产。