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    • 2. 发明申请
    • METHOD FOR DETECTING AN ANTIGEN
    • 检测抗原的方法
    • US20120309033A1
    • 2012-12-06
    • US13536202
    • 2012-06-28
    • Kazuaki NishioNozomu MatsukawaShigeo Yoshii
    • Kazuaki NishioNozomu MatsukawaShigeo Yoshii
    • G01N21/78
    • G01N33/542C12Q1/26G01N33/54373G01N2333/90287
    • The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.
    • 本发明涉及使用抗体和酶检测抗原的方法。 具体而言,本发明提供了不使用标记抗体来检测抗原的方法。 该方法包括将颗粒浸入预测含有抗原的第一缓冲溶液中; 其中抗体和多铜氧化酶CueO固定在颗粒的每个表面上,并且抗体与抗原特异性反应。 该方法还包括以下步骤:回收所获得的颗粒; 混合回收的颗粒,氧化还原指示剂(还原剂)和第二缓冲溶液以制备反应溶液; 测定反应溶液中所含的多铜氧化酶CueO的活度; 基于上述活性度确定第一缓冲溶液含有抗原。
    • 4. 发明授权
    • Method for detecting an antigen
    • 检测抗原的方法
    • US08470549B2
    • 2013-06-25
    • US13536202
    • 2012-06-28
    • Kazuaki NishioNozomu MatsukawaShigeo Yoshii
    • Kazuaki NishioNozomu MatsukawaShigeo Yoshii
    • G01N21/78G01N33/53G01N33/52
    • G01N33/542C12Q1/26G01N33/54373G01N2333/90287
    • The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.
    • 本发明涉及使用抗体和酶检测抗原的方法。 具体而言,本发明提供了不使用标记抗体来检测抗原的方法。 该方法包括将颗粒浸入预测含有抗原的第一缓冲溶液中; 其中抗体和多铜氧化酶CueO固定在颗粒的每个表面上,并且抗体与抗原特异性反应。 该方法还包括以下步骤:回收所获得的颗粒; 混合回收的颗粒,氧化还原指示剂(还原剂)和第二缓冲溶液以制备反应溶液; 测定反应溶液中所含的多铜氧化酶CueO的活度; 基于上述活性度确定第一缓冲溶液含有抗原。
    • 5. 发明申请
    • Method for producing single electron semiconductor element
    • 单电子半导体元件的制造方法
    • US20080108227A1
    • 2008-05-08
    • US11878691
    • 2007-07-26
    • Shinya KumagaiShigeo YoshiiNozomu MatsukawaIchiro Yamashita
    • Shinya KumagaiShigeo YoshiiNozomu MatsukawaIchiro Yamashita
    • H01L21/28
    • H01L29/7613B82Y10/00H01L29/66439H01L49/006Y10S438/962Y10S977/773
    • The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode. In the method for production of SET of the present invention, the metal or semiconductor particle can be fixed as a quantum dot at a suitable position in the nano gap between the source electrode/drain electrode following decomposition of ferritin, and in addition, formation of unnecessary quantum dot can be suppressed.
    • 本发明提供一种单电子半导体元件(SET)的制造方法,其中量子点选择性地排列在细电极之间的纳米间隙中,从而显着提高了产品产率,从而实现了优异的实用性。 本发明的SET的制造方法的特征在于,将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上,所述源极和漏极通过层叠钛膜和 除钛以外的金属的膜,由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。 在本发明的SET的制造方法中,金属或半导体粒子可以在铁蛋白分解后的源电极/漏电极之间的纳米间隙的适当位置作为量子点固定,另外,形成 可以抑制不必要的量子点。