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1. 发明授权

US07927967B2 Method for manufacturing semiconductor memory device 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US07927967B2
公开(公告)日：2011-04-19
申请号：US12608903
申请日：2009-10-29
申请人： Kayo Nomura , Hideto Matsuyama
发明人： Kayo Nomura , Hideto Matsuyama
IPC分类号： H01L21/76
CPC分类号： H01L27/11578 , H01L27/11575 , H01L27/11582
摘要： A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate; making a hole in the stacked unit to pass through electrode layers and insulating layers of the stacked unit; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insulating layers; forming a metal film on a side wall of the trench; forming a cap film to cover the metal film and fill into the trench; performing heat treatment to form a compound on the side wall of the trench.
摘要翻译：一种半导体存储器件的制造方法，包括：在半导体衬底上形成堆叠单元; 在堆叠单元中形成孔，以通过层叠单元的电极层和绝缘层; 在所述孔的侧壁上形成绝缘膜，所述绝缘膜包括电荷存储层; 在所述孔的内部形成半导体层，以在电极层和绝缘层的堆叠方向上对准以形成存储器串; 在靠近存储器串的层叠单元的一部分中形成沟槽，以穿过电极层和绝缘层; 在沟槽的侧壁上形成金属膜; 形成盖膜以覆盖金属膜并填充到沟槽中; 进行热处理以在沟槽的侧壁上形成化合物。

2. 发明申请

US20090020883A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20090020883A1
公开(公告)日：2009-01-22
申请号：US12175132
申请日：2008-07-17
申请人： Kayo Nomura , Junichi Wada , Hideto Matsuyama , Masayuki Kitamura
发明人： Kayo Nomura , Junichi Wada , Hideto Matsuyama , Masayuki Kitamura
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76877 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76867 , H01L21/76873 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.
摘要翻译：半导体器件包括布置在半导体衬底之上并使用铝（Al）作为材料的第一接触插塞; 布置在第一接触插塞上并与第一接触插塞接触并使用难熔金属材料的第二接触插塞; 布置在第一和第二接触插塞的侧面上的第一电介质膜; 布置在第二接触塞上方并使用铜（Cu）作为材料的导线; 布置在所述导线的侧面侧的第二电介质膜; 以及阻挡膜，其至少布置在所述线和所述第一电介质膜之间以及所述线与所述第二电介质膜之间。

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