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1. 发明授权

US5811872A Semiconductor device and method of farbricating the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5811872A
公开(公告)日：1998-09-22
申请号：US594947
申请日：1996-01-31
申请人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
发明人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/532 , H01L23/58
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/3105 , H01L21/31608 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
摘要翻译：半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

2. 发明授权

US5376590A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5376590A
公开(公告)日：1994-12-27
申请号：US5670
申请日：1993-01-19
申请人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
发明人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/532 , H01L21/02
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/3105 , H01L21/31608 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
摘要翻译：半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

3. 发明授权

US5512513A Method of fabricating semiconductor device with water protective film 失效
标题翻译：用水保护膜制造半导体器件的方法
公开(公告)号：US5512513A
公开(公告)日：1996-04-30
申请号：US296025
申请日：1994-08-25
申请人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
发明人： Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/3105 , H01L21/31608 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
摘要翻译：半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

4. 发明授权

US5972780A Thin film forming apparatus and method 失效
标题翻译：薄膜成膜装置及方法
公开(公告)号：US5972780A
公开(公告)日：1999-10-26
申请号：US911845
申请日：1997-08-15
申请人： Katsuyuki Machida , Hakaru Kyuragi , Hideo Akiya , Kazuo Imai
发明人： Katsuyuki Machida , Hakaru Kyuragi , Hideo Akiya , Kazuo Imai
IPC分类号： B29C43/56 , B32B37/18 , H05K3/20 , H01L21/30 , H01L21/46
CPC分类号： B29C43/56 , B32B37/00 , H05K3/20 , B29C2043/561 , B29C43/32 , B32B2309/68 , B32B37/025 , B32B37/18 , Y10T156/12 , Y10T156/1343 , Y10T156/1705
摘要： A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.
摘要翻译：一种薄膜形成装置，包括：试样保持体，配置有用于形成薄膜的基板;与该试样支架相对的转印板，在其上放置表面形成有薄膜的薄膜，薄膜形成室，样品架和转印板，用于移动样本保持架和转印板中的至少一个的压力单元，并且在基板和形成在薄膜上的薄膜的同时将样本架抵靠转印板按压预定时间彼此接触，用于在预定温度下加热基板的加热单元和用于真空排出薄膜形成室的排气单元。

5. 发明授权

US06340641B1 Substrate flattening method and film-coated substrate made thereby 有权
标题翻译：底材平整方法和由此制成的薄膜包衣基材
公开(公告)号：US06340641B1
公开(公告)日：2002-01-22
申请号：US09297343
申请日：1999-04-29
申请人： Ryo Muraguchi , Akira Nakashima , Atsushi Tonai , Michio Kimatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
发明人： Ryo Muraguchi , Akira Nakashima , Atsushi Tonai , Michio Kimatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
IPC分类号： H01L2131
CPC分类号： B05D1/286 , G11B5/8404
摘要： The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.
摘要翻译：本发明提供一种容易平坦化具有不平坦表面的基板的凹凸表面的方法。该方法包括在平滑基材的表面上形成含有球状微粒的涂膜的步骤; 将具有含有球状微粒的涂膜的光滑基板的表面粘附到具有不平坦表面的基板的凹凸表面上; 并将含有球状微粒的涂膜转印到基板的不平坦表面上，使得凹凸表面平坦化。

6. 发明授权

US6086699A Thin film-forming method and thin film-forming apparatus therefor 失效
标题翻译：薄膜形成方法及其薄膜形成装置
公开(公告)号：US6086699A
公开(公告)日：2000-07-11
申请号：US79112
申请日：1998-05-14
申请人： Akira Nakashima , Atsushi Tonai , Ryo Muraguchi , Michio Komatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
发明人： Akira Nakashima , Atsushi Tonai , Ryo Muraguchi , Michio Komatsu , Katsuyuki Machida , Hakaru Kyuragi , Kazuo Imai
IPC分类号： H01L21/3205 , B05D1/28 , H01L21/00 , H01L21/31 , H01L21/316 , H01L21/768 , B32B33/00 , B05D5/00 , B05D7/24 , B05D7/26
CPC分类号： H01L21/6715 , B05D1/28 , H01L21/67132
摘要： Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus. By the apparatus and the method, formation of a planar thin film on a substrate such as a semiconductor wafer can be carried out continuously, stably and at a low cost, and quality lowering of the thin film and property change thereof with time caused by adherence of impurities to the thin film or contamination of the thin film with impurities are avoidable. Moreover, the apparatus and the method are applicable to large-sized substrates.
摘要翻译：公开了一种薄膜形成装置，其包括用于将薄膜形成涂布液供给到转印辊2的表面上的涂布液供给装置6，包括转印辊2的转印装置4，转印辊2的表面涂覆有从涂布液供给装置供给的薄膜形成用涂布液，形成转印薄膜8，以及用于在转印辊下连续输送基板9的基板输送机构16，所述基板9的表面设置有薄的膜，其中转印装置被制造成使得其上具有转印薄膜的转印辊表面与由基板输送装置输送的基板的表面紧密接触，以将形成在转印辊表面上的转印薄膜转印到基材表面。还公开了使用该薄膜形成装置的薄膜形成方法。通过该装置和方法，可以连续，稳定地且低成本地在诸如半导体晶片的基板上形成平面薄膜，并且随着粘附时间的推移，薄膜的质量降低及其性能变化杂质对薄膜的污染或杂质污染薄膜是可以避免的。此外，该装置和方法适用于大尺寸基板。

7. 发明授权

US6092578A Transferring thin film to a substrate 失效
标题翻译：将薄膜转移到基材上
公开(公告)号：US6092578A
公开(公告)日：2000-07-25
申请号：US026119
申请日：1998-02-19
申请人： Katsuyuki Machida , Hakaru Kyuragi , Hideo Akiya , Kazuo Imai
发明人： Katsuyuki Machida , Hakaru Kyuragi , Hideo Akiya , Kazuo Imai
IPC分类号： B29C43/56 , B32B37/18 , H05K3/20 , B32B35/00 , H01L21/30
CPC分类号： B29C43/56 , B32B37/00 , H05K3/20 , B29C2043/561 , B29C43/32 , B32B2309/68 , B32B37/025 , B32B37/18 , Y10T156/12 , Y10T156/1343 , Y10T156/1705
摘要： A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.
摘要翻译：一种薄膜形成装置，包括：试样保持体，配置有用于形成薄膜的基板;与该试样支架相对的转印板，在其上放置表面形成有薄膜的薄膜，薄膜形成室，样品架和转印板，用于移动样本保持架和转印板中的至少一个的压力单元，并且在基板和形成在薄膜上的薄膜的同时将样本架抵靠转印板按压预定时间彼此接触，用于在预定温度下加热基板的加热单元和用于真空排出薄膜形成室的排气单元。

8. 发明授权

US5674771A Capacitor and method of manufacturing the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US5674771A
公开(公告)日：1997-10-07
申请号：US34906
申请日：1993-03-22
申请人： Katsuyuki Machida , Kazuo Imai , Hideo Yoshino , Yoshiharu Ozaki , Kenji Miura
发明人： Katsuyuki Machida , Kazuo Imai , Hideo Yoshino , Yoshiharu Ozaki , Kenji Miura
IPC分类号： H01L21/02 , H01L21/70
CPC分类号： H01L28/40
摘要： A structure of a capacitor includes a first metal interconnection layer, a dielectric film, and a second metal interconnection layer. The dielectric film is formed on the first metal interconnection layer. The second metal interconnection layer is formed on the dielectric film. The dielectric film is a dielectric film formed by bias-ECR plasma CVD.
摘要翻译：电容器的结构包括第一金属互连层，电介质膜和第二金属互连层。电介质膜形成在第一金属互连层上。第二金属互连层形成在电介质膜上。电介质膜是通过偏置ECR等离子体CVD形成的电介质膜。

9. 发明授权

US07189625B2 Micromachine and manufacturing method 有权
标题翻译：微机械及制造方法
公开(公告)号：US07189625B2
公开(公告)日：2007-03-13
申请号：US11243550
申请日：2005-10-04
申请人： Hiromu Ishii , Yasuyuki Tanabe , Katsuyuki Machida , Masami Urano , Shouji Yagi , Tomomi Sakata
发明人： Hiromu Ishii , Yasuyuki Tanabe , Katsuyuki Machida , Masami Urano , Shouji Yagi , Tomomi Sakata
IPC分类号： H01L21/20 , H01L21/469 , H01L29/82
CPC分类号： B81B3/0008 , B81B2201/045 , B81C2201/112
摘要： In a micromachine according to this invention, a polyimide film is formed on the surface of each electrode. The polyimide film is formed as follows. A substrate having each electrode and a counterelectrode are dipped in an electrodeposition polyimide solution, and a positive voltage is applied to the electrode. A material dissolved in the electrodeposition polyimide solution is deposited on a surface of the positive-voltage-applied electrode that is exposed in the solution, thus forming a polyimide film on the surface.
摘要翻译：在根据本发明的微型机器中，在每个电极的表面上形成聚酰亚胺膜。聚酰亚胺膜如下形成。将具有每个电极和反电极的基板浸渍在电沉积聚酰亚胺溶液中，并向电极施加正电压。溶解在电沉积聚酰亚胺溶液中的材料沉积在暴露在溶液中的正电压施加电极的表面上，从而在表面上形成聚酰亚胺膜。

10. 发明申请

US20060115920A1 Semiconductor device having MEMS 失效
标题翻译：具有MEMS的半导体器件
公开(公告)号：US20060115920A1
公开(公告)日：2006-06-01
申请号：US11330951
申请日：2006-01-11
申请人： Masami Urano , Hiromu Ishii , Toshishige Shimamura , Yasuyuki Tanabe , Katsuyuki Machida , Tomomi Sakata
发明人： Masami Urano , Hiromu Ishii , Toshishige Shimamura , Yasuyuki Tanabe , Katsuyuki Machida , Tomomi Sakata
IPC分类号： H01L21/00 , G01B7/16
CPC分类号： B81C1/00246 , B81C2203/0735
摘要： In a semiconductor device having a MEMS according to this invention, a plurality of units having movable portions for constituting a MEMS are monolithically mounted on a semiconductor substrate on which an integrated circuit including a driving circuit, sensor circuit, memory, and processor is formed. Each unit has a processor, memory, driving circuit, and sensor circuit.
摘要翻译：在具有根据本发明的MEMS的半导体器件中，具有用于构成MEMS的可移动部分的多个单元被单片地安装在其上形成有包括驱动电路，传感器电路，存储器和处理器的集成电路的半导体衬底上。每个单元都有一个处理器，存储器，驱动电路和传感器电路。

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