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1. 发明申请

US20080190775A1 METHOD OF ELECTRODEPOSITION COATING ON A HUB 审中-公开
标题翻译：在一个集体电镀上的电沉积方法
公开(公告)号：US20080190775A1
公开(公告)日：2008-08-14
申请号：US11765549
申请日：2007-06-20
申请人： Katsuyuki Kawamura , Yoshio Inoue , Satoru Endo , Hiroyuki Okuno
发明人： Katsuyuki Kawamura , Yoshio Inoue , Satoru Endo , Hiroyuki Okuno
IPC分类号： C25D5/02 , C25D5/08 , C25D5/50
CPC分类号： B60B27/00 , C25D13/14
摘要： A method is realized for easily performing, without using a masking tape, an operation to accurately form a coating film 31 only on a coated section (α8) partly formed on the surface of a hub main body 13a. The upper end face of a rubber closed end cylindrical masking cover 32 is elastically pressed against the outside end surface of a cylindrical section 16 forming the hub main body 13a. As a result a border section between the coated section (α8) and the portion adjacent to the coated section (α8) can be made liquid-tight. In this state, coating particles are electrodeposited on the coated section (α8) by bringing a coating liquid 28 discharged from a liquid supply tube 29 into contact with the coated section (α8). By adopting such a method, the problems can be solved.
摘要翻译：实现了一种方法，用于在不使用遮蔽胶带的情况下轻易地执行仅在部分形成在轮毂主体13的表面上的涂覆部分（α8）精确地形成涂膜31的操作一个。橡胶封闭端圆筒形遮蔽罩32的上端面弹性地压靠在形成轮毂主体13a的圆筒部16的外端面上。结果，涂覆部分（α8 S）与与涂覆部分（α8 S 8）相邻的部分之间的边界部分可以被制成液密的。在这种状态下，通过使从液体供应管29排出的涂布液28与涂覆部分接触，涂覆颗粒被电沉积在涂覆部分（α8 S）上。 SUB>）。通过采用这种方法，可以解决问题。

2. 发明授权

US5597965A Method and apparatus for measuring the preload gap of a double row rolling bearing 失效
标题翻译：用于测量双列滚动轴承的预载间隙的方法和装置
公开(公告)号：US5597965A
公开(公告)日：1997-01-28
申请号：US346638
申请日：1994-11-30
申请人： Satoru Endo , Yoshisada Imai , Hiroyuki Okuno
发明人： Satoru Endo , Yoshisada Imai , Hiroyuki Okuno
IPC分类号： F16C25/06 , F16C43/04 , G01B5/14 , G01L5/12
CPC分类号： G01B5/146 , F16C43/04 , G01M13/045
摘要： An method and apparatus for measuring the preload gap of a double row rolling bearing, such that it is possible to accurately determine the preload to be obtained when the inner ring is fully pressed onto the cylindrical surface of the spindle from a condition wherein the rolling bodies or members are in an unpreloaded condition prior to fully pressing the inner ring.
摘要翻译：一种用于测量双列滚动轴承的预载间隙的方法和装置，使得可以准确地确定当内圈被完全压在主轴的圆柱形表面上时所获得的预载荷，其中滚动体或者在完全按压内圈之前，构件处于未加载状态。

3. 发明授权

US09153536B2 Al alloy film for semiconductor device 有权
标题翻译：铝合金薄膜半导体器件
公开(公告)号：US09153536B2
公开(公告)日：2015-10-06
申请号：US14117531
申请日：2012-05-16
申请人： Hiroyuki Okuno , Toshihiro Kugimiya , Yoshihiro Yokota , Takeaki Maeda
发明人： Hiroyuki Okuno , Toshihiro Kugimiya , Yoshihiro Yokota , Takeaki Maeda
IPC分类号： H01L29/15 , H01L29/22 , H01L31/0256 , H01L31/0296 , H01L23/532 , H01J37/34 , C22C21/02 , C22C21/00 , C22C21/12 , C22C21/14 , H01L29/16 , H01L29/20
CPC分类号： H01L23/53219 , C22C21/00 , C22C21/02 , C22C21/12 , C22C21/14 , C22F1/04 , C23C14/165 , C23C14/3414 , H01J37/3429 , H01L21/2855 , H01L29/16 , H01L29/1608 , H01L29/2003 , H01L29/45 , H01L29/452 , H01L2924/0002 , Y10T428/12431 , H01L2924/00
摘要： Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 μm. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 μΩcm or less.
摘要翻译：提供一种用于半导体器件的Al合金膜，其耐热性优异，并且即使在Al合金膜暴露于高温的情况下也能抑制小丘的产生，并且作为膜具有低电阻率。本发明涉及一种用于半导体器件的Al合金膜，其特征在于，在将Al合金膜保持在500℃进行热处理之后，满足下述所有特征（a） - （c） 30分钟，膜厚500nm〜5μm。（a）Al基体的最大粒径为800nm以下。（b）小丘密度小于1×109个/ m2。（c）电阻率为10μΩ·cm以上。

4. 发明申请

US20150171016A1 AL ALLOY FILM FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的AL合金膜
公开(公告)号：US20150171016A1
公开(公告)日：2015-06-18
申请号：US14117531
申请日：2012-05-16
申请人： Hiroyuki Okuno , Toshihiro Kugimiya , Yoshihiro Yokota , Takeaki Maeda
发明人： Hiroyuki Okuno , Toshihiro Kugimiya , Yoshihiro Yokota , Takeaki Maeda
IPC分类号： H01L23/532 , C22C21/02 , H01L29/20 , C22C21/12 , C22C21/14 , H01L29/16 , H01J37/34 , C22C21/00
CPC分类号： H01L23/53219 , C22C21/00 , C22C21/02 , C22C21/12 , C22C21/14 , C22F1/04 , C23C14/165 , C23C14/3414 , H01J37/3429 , H01L21/2855 , H01L29/16 , H01L29/1608 , H01L29/2003 , H01L29/45 , H01L29/452 , H01L2924/0002 , Y10T428/12431 , H01L2924/00
摘要： Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 μm. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 μΩcm or less.
摘要翻译：提供一种用于半导体器件的Al合金膜，其耐热性优异，并且即使在Al合金膜暴露于高温的情况下也能抑制小丘的产生，并且作为膜具有低电阻率。本发明涉及一种用于半导体器件的Al合金膜，其特征在于，在将Al合金膜保持在500℃进行热处理之后，满足下述所有特征（a） - （c） 30分钟，膜厚500nm〜5μm。（a）Al基体的最大粒径为800nm以下。（b）小丘密度小于1×109个/ m2。（c）电阻率为10μΩ·cm以上。

5. 发明申请

US20110019350A1 AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET 有权
标题翻译：用于显示装置的AL合金膜，显示装置和喷射目标
公开(公告)号：US20110019350A1
公开(公告)日：2011-01-27
申请号：US12922965
申请日：2009-04-23
申请人： Junichi Nakai , Akira Nanbu , Hiroshi Goto , Hiroyuki Okuno , Aya Miki
发明人： Junichi Nakai , Akira Nanbu , Hiroshi Goto , Hiroyuki Okuno , Aya Miki
IPC分类号： H05K7/00 , C22C21/00 , C23C14/14
CPC分类号： H01L23/53219 , C23C14/185 , G02F2001/136295 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.
摘要翻译：公开了一种用于显示装置的Al合金膜，即使应用低温热处理也能够实现令人满意的低电阻，可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

6. 发明申请

US20100163877A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100163877A1
公开(公告)日：2010-07-01
申请号：US12376863
申请日：2007-09-13
申请人： Aya Hino , Hiroshi Gotou , Hiroyuki Okuno , Junichi Nakai
发明人： Aya Hino , Hiroshi Gotou , Hiroyuki Okuno , Junichi Nakai
IPC分类号： H01L33/42 , H01L33/16
CPC分类号： G02F1/136286 , H01L23/53219 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.
摘要翻译：显示器具有设置有透明导电膜，薄膜晶体管和将薄膜晶体管电连接到透明导电膜的铝合金布线膜的玻璃基板。铝合金布线膜是具有铝合金的第一层（X）的层叠结构，所述第一层（X）包含选自包含Ni和Ag的特定元素组Q中的至少一种元素，以及选自特定元素基团R中的至少一种元素，包括含量在特定范围内的稀土元素和Mg，以及含有比第一层（X）的电阻率低的铝合金的第二层（Y）。第一层（X）与透明导电膜直接接触。

7. 发明申请

US20090242394A1 AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于AL的合金喷射目标及其制造方法
公开(公告)号：US20090242394A1
公开(公告)日：2009-10-01
申请号：US12414877
申请日：2009-03-31
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Mototaka Ochi , Tomoya Kishi
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Mototaka Ochi , Tomoya Kishi
IPC分类号： C23C14/34 , C21D1/00
CPC分类号： C23C14/3414 , C22C21/00 , C22F1/04
摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.
摘要翻译：本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

8. 发明授权

US10365520B2 Wiring structure for display device 有权
公开(公告)号：US10365520B2
公开(公告)日：2019-07-30
申请号：US14241600
申请日：2012-09-03
申请人： Hiroyuki Okuno , Toshihiro Kugimiya
发明人： Hiroyuki Okuno , Toshihiro Kugimiya
IPC分类号： H01L23/532 , G02F1/1343 , C22C21/00 , H01J31/12 , H01J11/46 , H01L27/12 , B32B15/01 , C23C14/06 , H01L21/48 , G02F1/1362 , C23C14/00 , C23C14/02 , C22C14/00 , C22C27/02 , C22C27/04
摘要： Provided is a wiring structure for display device which does not generate hillocks even when exposed to high temperatures at levels around 450 to 600° C., has excellent high-temperature heat resistance, keeps electrical resistance (wiring resistance) of the entire wiring structure low, and further has excellent resistance to hydrofluoric acid. This wiring structure for a display device comprises a structure in which are laminated, in order from the substrate side, a first layer of an Al alloy that contains at least one chemical element selected from the group (group X) consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr, and Pt and contains at least one rare earth element, and a second layer of an Al alloy nitride, or a nitride of at least one chemical element selected from the group Y consisted of Ti, Mo, Al, Ta, Nb, Re, Zr, W, V, Hf, and Cr.

9. 发明申请

US20100032186A1 TRANSPARENT ELECTRODE FOR DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：用于显示装置的透明电极及其制造方法
公开(公告)号：US20100032186A1
公开(公告)日：2010-02-11
申请号：US12528008
申请日：2008-02-25
申请人： Hiroshi Gotou , Hiroyuki Okuno
发明人： Hiroshi Gotou , Hiroyuki Okuno
IPC分类号： H01B5/00 , H05K1/09 , C23C14/34
CPC分类号： G02F1/13439 , H01L27/124
摘要： The present invention relates to a transparent electrode for a display device which includes a first transparent conductive film containing nitrogen, and a second transparent conductive film not containing nitrogen, wherein the first transparent conductive film is in contact with an aluminum alloy film. In accordance with the present invention, there is obtained a transparent electrode for a display device which is capable of, even when a barrier metal layer to be generally provided between an aluminum alloy film and the transparent electrode is omitted, controlling the variance small while keeping the low contact resistance, and further which is also excellent in light transmission characteristics.
摘要翻译：本发明涉及一种显示装置用透明电极，其包括含氮的第一透明导电膜和不含氮的第二透明导电膜，其中所述第一透明导电膜与铝合金膜接触。根据本发明，获得了一种显示装置用透明电极，即使在省略通常设置在铝合金膜和透明电极之间的阻挡金属层的同时，也可以保持方差小的同时保持低接触电阻，并且还具有优异的透光特性。

10. 发明授权

US06397471B1 Cage assembling apparatus 有权
标题翻译：笼组装装置
公开(公告)号：US06397471B1
公开(公告)日：2002-06-04
申请号：US09471147
申请日：1999-12-23
申请人： Hiroyuki Okuno
发明人： Hiroyuki Okuno
IPC分类号： B21D5310
CPC分类号： F16C33/38 , F16C19/14 , F16C33/416 , F16C43/08 , Y10T29/49679 , Y10T29/4968 , Y10T29/49682 , Y10T29/49686 , Y10T29/53104
摘要： The apparatus incorporates a base member 11 for supporting a cage 3 and a rolling-element distributing column 13 disposed concentrically to the cage 3 supported by the base member 11 and permitted to relatively rotate with respect to the base member 11. An opening 28 of a rolling-member supply passage 29 in which a plurality of the rolling elements 5 are loaded in a line is formed at an end of the rolling-element distributing column 13 opposite to the cage 3, and a pressing surfaces 27 or 31 is formed which forcibly introduces the rolling elements 5 supplied through the opening 28 into the pockets 7 by using relative rotation between the base member 11 and the rolling-element distributing column 13.
摘要翻译：该装置包括用于支撑保持架3的基部构件11和与基座构件11支撑并被允许相对于基部构件11相对旋转的保持架3同心设置的滚动体分配塔13。在与保持架3相反的滚动元件分配塔13的端部形成有多个滚动体5一体地装入的滚动体供给通道29，形成有压制面27,31，将通过开口28供给的滚动元件5通过基部构件11和滚动体分配塔13之间的相对旋转引入凹部7。

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