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1. 发明申请

US20050105347A1 Magnetic storage unit using ferromagnetic tunnel junction element 失效
标题翻译：磁存储单元采用铁磁隧道连接元件
公开(公告)号：US20050105347A1
公开(公告)日：2005-05-19
申请号：US10503658
申请日：2003-02-07
申请人： Katsutoshi Moriyama , Hironoeu Mori , Nobumichi Okazaki
发明人： Katsutoshi Moriyama , Hironoeu Mori , Nobumichi Okazaki
IPC分类号： G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C29/00
CPC分类号： G11C11/16
摘要： A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, wiring word lines in the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, and wiring bit lines in the direction orthogonal to the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, wherein two different memory states can be written in the ferromagnetic tunnel junction device by inverting the direction of the current flowing through the bit lines. At the time of writing in the ferromagnetic tunnel junction device, the direction of the current flowing through the word line is inverted in the same direction as or the opposite direction to the magnetization direction of the fixed magnetization layer.
摘要翻译：使用铁磁隧道结装置提供的磁存储装置通过分别在隧道势垒层的顶表面和背表面上层叠固定磁化层和自由磁化层来形成铁磁隧道结装置，分别在磁化方向上布线字线的铁磁隧道结装置的固定磁化层，以及在与铁磁隧道结装置的固定磁化层的磁化方向正交的方向上的布线位线，其中可以将两个不同的存储器状态写入铁磁隧道结装置通过反转流过位线的电流的方向。在铁磁隧道结装置中写入时，流过字线的电流的方向与固定磁化层的磁化方向相同或相反的方向反转。

2. 发明申请

US20050077543A1 Composite storage circuit and semiconductor device having the same 失效
标题翻译：复合存储电路及具有相同的半导体器件
公开(公告)号：US20050077543A1
公开(公告)日：2005-04-14
申请号：US10503442
申请日：2003-02-07
申请人： Katsutoshi Moriyama , Hironoeu Mori , Hisanobu Tsukazaki
发明人： Katsutoshi Moriyama , Hironoeu Mori , Hisanobu Tsukazaki
IPC分类号： G11C11/41 , G11C11/00 , G11C14/00 , H01L29/739
CPC分类号： G11C11/005 , G11C14/00
摘要： The object of the present invention is to provide a composite storage circuit capable of executing a writing operation and reading operation at high speed, and as the result of that, a semiconductor apparatus capable of realizing an instant-on function and an instant-off function is provided. The composite storage circuit is constituted of a volatile storage circuit and a non-volatile storage circuit connected in parallel, and the same information as storage information in the volatile storage circuit is stored in the non-volatile storage circuit. Moreover, as a power supply to the volatile storage circuit decreases, storage information in the volatile storage circuit is written in the non-volatile storage circuit. Further, after a power failure or a decreased power supply, storage information from the non-volatile storage circuit is returned to the volatile storage circuit upon restarting power feeding. Further, a semiconductor apparatus is constituted by having the composite storage circuit described above.
摘要翻译：本发明的目的是提供一种能够高速执行写入操作和读取操作的复合存储电路，其结果是能够实现瞬时启动功能和瞬时功能的半导体装置被提供。复合存储电路由并联连接的易失性存储电路和非易失性存储电路构成，并且与易失性存储电路中的存储信息相同的信息存储在非易失性存储电路中。此外，随着向易失性存储电路的电源减少，易失性存储电路中的存储信息被写入非易失性存储电路中。此外，在电源故障或电力供应减少之后，在重新启动供电时，来自非易失性存储电路的存储信息返回到易失性存储电路。此外，通过具有上述复合存储电路构成半导体装置。

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