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1. 发明授权

US5486564A High purity polyhydrogen silsesquioxane resin for electronic coatings 失效
标题翻译：用于电子涂料的高纯度聚氢倍半硅氧烷树脂
公开(公告)号：US5486564A
公开(公告)日：1996-01-23
申请号：US387697
申请日：1995-02-13
申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
发明人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
IPC分类号： C08G77/32 , C08G77/12 , C08G77/36 , C08L83/00
CPC分类号： C08G77/12 , C08G77/36
摘要： Disclosed is a highly reproducible method for the molecular weight fractionation of polyhydrogen silsesquioxane that gives a very storage-stable polyhydrogen silsesquioxane having a freely selectable molecular weight. The method involves dissolving polyhydrogen silsesquioxane in active-hydrogen-free nonpolar solvent; adding an active-hydrogen-free polar solvent to the resulting solution in order to precipitate polyhydrogen silsesquioxane; and collecting the desired molecular weight fraction of polyhydrogen silsesquioxane.
摘要翻译：公开了一种高度可重复的聚氢倍半硅氧烷分子量分级方法，其提供了具有可自由选择的分子量的非常储存稳定的聚氢倍半硅氧烷。该方法包括将聚氢倍半硅氧烷溶解在无活性氢的非极性溶剂中; 向所得溶液中加入无活性氢的极性溶剂，以沉淀聚氢倍半硅氧烷; 并收集所需的聚氢倍半硅氧烷的分子量分数。

2. 发明授权

US5416190A Method for the molecular weight fractionation of polyhydrogen silsesquioxane 失效
$Method for the molecular weight fractionation of polyhydrogen silsesquioxane$
标题翻译：聚氢倍半硅氧烷的分子量分馏方法
公开(公告)号：US5416190A
公开(公告)日：1995-05-16
申请号：US145923
申请日：1993-10-29
申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
发明人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
IPC分类号： C08G77/32 , C08G77/12 , C08G77/36 , C08F6/12
CPC分类号： C08G77/12 , C08G77/36
摘要： Disclosed is a highly reproducible method for the molecular weight fractionation of polyhydrogen silsesquioxane that gives a very storage-stable polyhydrogen silsesquioxane having a freely selectable molecular weight. The method involves dissolving polyhydrogen silsesquioxane in active-hydrogen-free nonpolar solvent; adding an active-hydrogen-free polar solvent to the resulting solution in order to precipitate polyhydrogen silsesquioxane; and collecting the desired molecular weight fraction of polyhydrogen silsesquioxane.
摘要翻译：公开了一种高度可重复的聚氢倍半硅氧烷分子量分级方法，其提供了具有可自由选择的分子量的非常储存稳定的聚氢倍半硅氧烷。该方法包括将聚氢倍半硅氧烷溶解在无活性氢的非极性溶剂中; 向所得溶液中加入无活性氢的极性溶剂，以沉淀聚氢倍半硅氧烷; 并收集所需的聚氢倍半硅氧烷的分子量分数。

3. 发明授权

US5380555A Methods for the formation of a silicon oxide film 失效
标题翻译：形成氧化硅膜的方法
公开(公告)号：US5380555A
公开(公告)日：1995-01-10
申请号：US187239
申请日：1994-01-26
申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
发明人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
IPC分类号： C03C17/23 , C04B41/50 , C04B41/87 , C23C18/12 , H01L21/316 , B05D3/02
CPC分类号： C04B41/87 , C03C17/23 , C04B41/009 , C04B41/5035 , C23C18/1208 , C23C18/1212 , C23C18/1279 , H01L21/316 , C03C2217/213 , C03C2218/17 , C04B2111/00844
摘要： Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula(HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0wherein R is selected from the set comprising the hydrogen atom, alkyl groups, and aryl groups, and 0.1.ltoreq.X.ltoreq.2.0, and then heating the coated substrate to convert the coating into a ceramic silicon oxide film.
摘要翻译：公开了一种在衬底表面上形成陶瓷氧化硅膜的方法，其中所述膜是厚的，没有裂纹和针孔，并且不溶于有机溶剂。这些膜通过用具有通式（HR2SiO1 / 2）X（SiO4 / 2）1.0的硅树脂涂覆基板的表面而形成，其中R选自包含氢原子，烷基和芳基的组，和0.1≤X≤2.0，然后加热涂覆的基底以将涂层转变成陶瓷氧化硅膜。

4. 发明授权

US06214748B1 Semiconductor device and method for the fabrication thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06214748B1
公开(公告)日：2001-04-10
申请号：US09086031
申请日：1998-05-28
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： H01L2131
CPC分类号： H01L21/02134 , H01L21/0212 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/312 , H01L21/31695 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.
摘要翻译：本发明涉及在基板上形成薄膜的方法，其中通过将电绝缘的热固化树脂的溶液施加到基底上，蒸发溶剂并使树脂暴露于高能量辐射以固化树脂来制备薄膜。树脂溶液含有选自溶剂和气体发生添加剂的物质，其在树脂固化期间引起薄膜的强化。这导致介电常数低于2.7的膜。本发明还涉及具有互连结构的半导体器件，该互连结构包括至少一个具有介电常数小于2.7的中间绝缘层的导电层，其中通过本发明的方法制造绝缘层。

5. 发明授权

US5372842A Method for the formation of a silicon oxide film 失效
标题翻译：氧化硅膜形成方法
公开(公告)号：US5372842A
公开(公告)日：1994-12-13
申请号：US146358
申请日：1993-10-29
申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
发明人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
IPC分类号： H01L21/316 , C03C17/27 , C04B41/50 , C04B41/87 , C09D183/05 , C23C18/12 , H01L21/312 , B05D5/12
CPC分类号： C04B41/87 , C03C17/27 , C04B41/009 , C04B41/5035 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1279 , C03C2217/213 , C03C2218/322 , C04B2111/00844
摘要： Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.
摘要翻译：公开了一种形成厚的氧化硅膜的方法，其不溶于有机溶剂，并且在基板的表面上没有裂纹和针孔。该方法包括在基板的表面上形成氢倍半硅氧烷树脂膜，在惰性气体气氛中加热，将氢倍半硅氧烷树脂转化为陶瓷氧化硅，并将该陶瓷氧化硅转化为氧化硅陶瓷，由氧和氧组成的组与惰性气体混合。

6. 发明授权

US06448175B1 Method for forming insulating thin films 失效
标题翻译：绝缘薄膜的形成方法
公开(公告)号：US06448175B1
公开(公告)日：2002-09-10
申请号：US09656728
申请日：2000-09-07
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： H01L214763
CPC分类号： H01L21/316
摘要： To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.
摘要翻译：提供一种形成绝缘薄膜的方法，该方法可以在环境压力或接近环境压力的情况下高度地引起硅烷醇的冷凝和脱水。通过将氢倍半硅氧烷树脂涂覆到基底上并固化氢倍半硅氧烷，形成在半导体衬底上的层间电介质层树脂以产生层间介电层。然后在150至550℃的温度下，将该层间电介质层在1至1000托的压力下加热。

7. 发明授权

US06358804B2 Semiconductor device and method for the fabrication thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06358804B2
公开(公告)日：2002-03-19
申请号：US09739610
申请日：2000-12-19
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： H01L21336
CPC分类号： H01L21/02134 , H01L21/0212 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/312 , H01L21/31695 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.
摘要翻译：在基板上形成薄膜的方法，其中通过将电绝缘的热固化树脂的溶液施加到基板上，蒸发溶剂并将树脂暴露于高能辐射以固化树脂来制造薄膜。树脂溶液含有选自溶剂和气体发生添加剂的物质，其在树脂固化期间引起薄膜的强化。这导致介电常数低于2.7的膜。半导体器件还被公开为具有互连结构，该互连结构包括具有介电常数小于2.7的中间绝缘层的至少一个导电层，其中绝缘层通过上述方法制造。

8. 发明授权

US5338817A Method for the preparation of a silicone resin 失效
标题翻译：硅树脂制备方法
公开(公告)号：US5338817A
公开(公告)日：1994-08-16
申请号：US155894
申请日：1993-11-23
申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
发明人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
IPC分类号： C08G77/04 , C08G77/06 , C08G77/12 , C08G77/32 , C08G77/34
CPC分类号： C08G77/12
摘要： Disclosed is a method for the preparation of high molecular-weight silicone resins that have excellent storage stability in solution form. The method comprises the hydrolysis and condensation of a disiloxane and an alkyl silicate in an aqueous solution which contains at least 30 weight % alcohol and at least 5 weight % inorganic acid followed by isolation of the resin with an organic solvent which is poorly soluble in water and which has a dielectric constant of at least 4.
摘要翻译：公开了一种制备溶液形式具有优异储存稳定性的高分子量有机硅树脂的方法。该方法包括在含有至少30重量％醇和至少5重量％无机酸的水溶液中水解和缩合二硅氧烷和硅酸烷基酯，然后用难溶于水的有机溶剂分离树脂并且其介电常数至少为4。

9. 发明授权

US06191183B1 Method for the formation of silica thin films 有权
标题翻译：二氧化硅薄膜的形成方法
公开(公告)号：US06191183B1
公开(公告)日：2001-02-20
申请号：US09412219
申请日：1999-10-05
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： C08J328
CPC分类号： C09D183/04 , C08G77/12 , H01L21/316 , Y10T428/31663
摘要： The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.
摘要翻译：本发明涉及可以形成二氧化硅薄膜的组合物，其中所述组合物在施加到基底上时作为基底平面化涂层表现良好，并且可以通过暴露于高能辐射而转化成具有优异电绝缘性能的二氧化硅薄膜。用于形成二氧化硅薄膜的组合物包括（A）含有至少45重量％的分子量不超过1500的氢倍半硅氧烷树脂的氢倍半硅氧烷树脂; 和（B）溶剂。通过蒸发溶剂（B）制备二氧化硅薄膜，然后通过将所述基材的表面暴露于高能辐射而将至少一部分氢倍半硅氧烷树脂（A）转化为二氧化硅。优选的衬底是具有至少一个导电层的半导体衬底。

10. 发明授权

US6149966A Composition and process for forming electrically insulating thin films 失效
标题翻译：用于形成电绝缘薄膜的组成和工艺
公开(公告)号：US6149966A
公开(公告)日：2000-11-21
申请号：US120384
申请日：1998-03-31
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： C09D5/25 , C09D7/12 , C09D125/02 , C09D127/12 , C09D129/10 , C09D179/08 , C09D183/04 , C09D183/05 , C09D201/00 , H01B3/30 , H01B3/42 , H01B3/46 , H01L21/312 , H01L21/316 , B05D3/02 , B05D5/12
CPC分类号： H01L21/312 , C09D183/04 , H01B3/46
摘要： To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).
摘要翻译：提供一种用于形成可制造具有低介电常数的绝缘膜的绝缘膜的组合物和工艺。组合物包含（A）电绝缘的可固化无机或有机树脂，（B）溶剂和（C）至少一种溶剂可溶物质（不包括用于组分（B）的溶剂）），其在加热时或通过与树脂（A）可以在0℃至800℃的温度范围内产生气体或挥发。绝缘膜通过将基材的表面涂布在该组合物上而制备; 蒸发溶剂; 然后在所述树脂（A）的固化过程中或之后加热所述基材以便从组分（C）产生气体。

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