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    • 7. 发明授权
    • Thin film EL devices and process for producing the same
    • 薄膜EL器件及其制造方法
    • US4707419A
    • 1987-11-17
    • US867814
    • 1986-05-27
    • Takashi OguraKoichi TanakaKoji TaniguchiMasaru YoshidaAkiyoshi Mikami
    • Takashi OguraKoichi TanakaKoji TaniguchiMasaru YoshidaAkiyoshi Mikami
    • H05B33/18B32B9/04B32B17/06
    • H05B33/18Y10S428/917
    • The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200.degree. C. to 700.degree. C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.
    • 本发明提供了一种薄膜EL器件,其包括电极层,发光层和形成在衬底上的电极层,以及介于三层之间的绝缘层,所述发射层含有稀土元素的原子 和氟原子在其主体材料中,氟原子(F)与稀土原子(RE)的原子比(F / RE)被调整到0.5至2.5的范围,以及制造EL器件的方法 其特征在于,通过在基本上不含氧气和/或水分的条件下形成膜并在200℃至700℃的温度下对膜进行热处理来制备发光层,使得主体 发光层的材料在0.5〜2.5的范围内含有稀土元素(RE)的原子和调整原子比(F / RE)的氟原子(F)。 本发明提供了例如以高亮度发出绿色发光的薄膜EL器件。