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    • 1. 发明授权
    • Data integrity guarantee system
    • 数据完整性保证体系
    • US5761405A
    • 1998-06-02
    • US407241
    • 1995-03-20
    • Katsumi TadamuraMasakazu OkadaSyoji Yamaguchi
    • Katsumi TadamuraMasakazu OkadaSyoji Yamaguchi
    • H04L1/22G06F11/14G06F11/20H04L29/10H04L29/14
    • G06F11/1443G06F11/2005G06F11/2007
    • The main storage, the communication interface portion and the circuit control module hold transmission data in the buffers until completion of the transmission has been confirmed. When a fault has occurred in the current operating system of the duplexed portions in the configuration elements of the host computer and the multi-circuit control unit, the duplexed portions are changed over from the current operating system to the stand-by system. In this case, information for reproducing data that has been lost due to the change-over is transmitted from the main storage and the circuit control module to the communication interface portion which has become the new current operating system. The communication interface portion which has become the new current operating system restarts the processing based on this information. Data integrity is guaranteed for the data of both directions of transmission and receiving between the host computer and the terminal without mutually confirming the state of data communications before the occurrence of the fault between the terminal and the host computer after the occurrence of the fault. Information exchanges of layer 3 or above are not carried out between the host computer and the terminal. Therefore, overhead of data communications can be minimized.
    • 主存储器,通信接口部分和电路控制模块保持缓冲器中的传输数据,直到传输完成已被确认为止。 当在主计算机和多电路控制单元的配置元件中的双工部分的当前操作系统中发生故障时,双工部分从当前操作系统切换到备用系统。 在这种情况下,用于再现由于转换而丢失的数据的信息从主存储器和电路控制模块发送到已经成为新的当前操作系统的通信接口部分。 已经成为新的当前操作系统的通信接口部分基于该信息重新启动处理。 数据完整性保证主机与终端之间的传输和接收两个方向的数据,而不会在发生故障之后在终端和主机之间的故障发生之前相互确认数据通信的状态。 第三层以上的信息交换不能在主机与终端之间进行。 因此,可以最小化数据通信的开销。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08350272B2
    • 2013-01-08
    • US13087118
    • 2011-04-14
    • Nobuo TsuboiMasakazu Okada
    • Nobuo TsuboiMasakazu Okada
    • H01L29/12
    • H01L29/0696H01L27/0207H01L27/11807
    • A semiconductor device which is designed based on RDR, suppresses the occurrence of a trouble at the boundary between an active region and a power wire and therearound and is small in size and highly integrated. The semiconductor device includes a first conductive impurity region for functional elements which is formed over the main surface of a semiconductor substrate and a second conductive impurity region for power potential to which power potential is applied in at least one standard cell. It also includes insulating layers which are formed over the main surface of the semiconductor substrate and have throughholes reaching the main surface of the semiconductor substrate, and a conductive layer for contact formed in the throughholes of the insulating layers. The impurity region for functional elements and the impurity region for power potential are electrically coupled to each other through the conductive layer for contact which is formed astride the impurity region for functional elements and the impurity region for power potential.
    • 基于RDR设计的半导体器件抑制在活性区域和电源线之间的边界处的麻烦的发生,并且尺寸小并且高度集成。 半导体器件包括形成在半导体衬底的主表面上的功能元件的第一导电杂质区和用于在至少一个标准单元中施加功率电位的功率电位的第二导电杂质区。 它还包括形成在半导体衬底的主表面上并具有到达半导体衬底的主表面的通孔和形成在绝缘层的通孔中的用于接触的导电层的绝缘层。 用于功能元件的杂质区域和功率电位的杂质区域通过形成跨越功能元件的杂质区域和功率电位的杂质区域的接触用导电层彼此电耦合。