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1. 发明申请

US20090059985A1 EL SEMICONDUCTOR DEVICE 有权
标题翻译： EL半导体器件
公开(公告)号：US20090059985A1
公开(公告)日：2009-03-05
申请号：US12038062
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/32
CPC分类号： H01S5/327 , H01S5/0218 , H01S5/0421 , H01S5/305 , H01S5/3059
摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.
摘要翻译：具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及提供了一种有源层及其p型覆层。与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族元素由Se和Te组成。本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量。

2. 发明申请

US20100040103A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100040103A1
公开(公告)日：2010-02-18
申请号：US12536210
申请日：2009-08-05
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/20
CPC分类号： H01S5/327 , H01S5/305 , H01S5/3211 , H01S5/3213 , H01S5/3216
摘要： The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. 1×1017 cm−3≦N1≦1×1020 cm−3 (1) N1>N2 (2) D1>D2 (3) Ec1
摘要翻译：本发明提供一种半导体器件，其包括：包括n型第一包层，n型第二包层，有源层，p型第一包层和p型第二包层的半导体层，这个顺序在InP衬底上。 n型第一包层和n型第二包层满足下式（1）〜（4），p型第一包层和p型第二包层满足式（5）〜（8））。 1×1017cm-3＆nlE; N1＆nlE; 1×1020cm-3（1）N1> N2（2）D1> D2（3）Ec1

3. 发明授权

US08050305B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08050305B2
公开(公告)日：2011-11-01
申请号：US12132063
申请日：2008-06-03
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/347 , H01S5/327 , H01L31/0272 , H01L31/0296
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02392 , H01L21/02485 , H01L21/02568 , H01L21/02579 , H01L33/28 , H01S5/3059
摘要： A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0
摘要翻译：提供了一种具有高可靠性，长寿命以及通过将新型材料应用于p型覆层的优异发光特性的半导体器件。半导体器件包括在InP衬底上的p型半导体层，其中p型半导体层具有通过交替层叠主要包括Bex1Mgx2Znx3Te（0

4. 发明授权

US07899104B2 EL semiconductor device 有权
标题翻译： EL半导体器件
公开(公告)号：US07899104B2
公开(公告)日：2011-03-01
申请号：US12038062
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/327 , H01S5/0218 , H01S5/0421 , H01S5/305 , H01S5/3059
摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.
摘要翻译：具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及提供了一种有源层及其p型覆层。与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族元素由Se和Te组成。本发明的n型层的特征在于具有大的能隙，导带的底部的高能量对于抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷是有效的。

5. 发明申请

US20080298415A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080298415A1
公开(公告)日：2008-12-04
申请号：US12132063
申请日：2008-06-03
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/347 , H01L33/00 , H01L29/15
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02392 , H01L21/02485 , H01L21/02568 , H01L21/02579 , H01L33/28 , H01S5/3059
摘要： A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0
摘要翻译：提供了一种具有高可靠性，长寿命以及通过将新型材料应用于p型覆层的优异发光特性的半导体器件。半导体器件包括InP衬底上的p型半导体层，其中p型半导体层具有通过交替层叠主要包括Bex1Mgx2Znx3Te（0

6. 发明授权

US07668217B2 Semiconductor laser diode device 失效
标题翻译：半导体激光二极管器件
公开(公告)号：US07668217B2
公开(公告)日：2010-02-23
申请号：US11882055
申请日：2007-07-30
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/327 , B82Y20/00 , H01S5/22 , H01S5/3213 , H01S5/3216 , H01S5/347 , H01S2301/173 , H01S2304/02
摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.
摘要翻译：本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

7. 发明申请

US20080049803A1 Semiconductor laser diode device 失效
标题翻译：半导体激光二极管器件
公开(公告)号：US20080049803A1
公开(公告)日：2008-02-28
申请号：US11882055
申请日：2007-07-30
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
IPC分类号： H01S5/347
CPC分类号： H01S5/327 , B82Y20/00 , H01S5/22 , H01S5/3213 , H01S5/3216 , H01S5/347 , H01S2301/173 , H01S2304/02
摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.
摘要翻译：本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

8. 发明申请

US20090141763A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20090141763A1
公开(公告)日：2009-06-04
申请号：US12038055
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Sumiko Fujisaki , Hitoshi Nakamura , Takeshi Kikawa , Shigehisa Tanaka
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Sumiko Fujisaki , Hitoshi Nakamura , Takeshi Kikawa , Shigehisa Tanaka
IPC分类号： H01S5/20
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02477 , H01L21/02505 , H01L21/02562 , H01L21/02568 , H01L21/02631 , H01S5/0218 , H01S2301/173 , H01S2304/02
摘要： There is disclosed a Be-containing II-VI group semiconductor laser that has a laminated structure formed on an InP substrate to continuously emit at room temperature without crystal degradation. A basic structure of the semiconductor laser is formed over the InP substrate by use of a lattice-matched II-VI group semiconductor including Be. An active layer and cladding layers are formed to be a double heterostructure with a type I band lineup, in order to increase the efficiency for injecting carriers into the active layer. The active layer and the cladding layers are also formed to enhance the light confinement to the active layer, in which the Mg composition of the p-type cladding layer is set to Mg
摘要翻译：公开了一种含有II-VI族半导体激光器，其具有形成在InP衬底上的层压结构，以在室温下连续发射而没有晶体降解。通过使用包括Be的晶格匹配的II-VI族半导体，在InP衬底上形成半导体激光器的基本结构。形成有源层和包覆层是具有I型带阵列的双异质结构，以提高将载流子注入有源层的效率。还形成有源层和包层，以增强对p型包覆层的Mg组成设定为Mg <0.2的有源层的光限制。

9. 发明授权

US07422919B2 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US07422919B2
公开(公告)日：2008-09-09
申请号：US11320750
申请日：2005-12-30
申请人： Shigehisa Tanaka , Sumiko Fujisaki , Yasunobu Matsuoka
发明人： Shigehisa Tanaka , Sumiko Fujisaki , Yasunobu Matsuoka
IPC分类号： H01L21/00
CPC分类号： H01L31/1075
摘要： An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.
摘要翻译：雪崩光电二极管包括至少一个具有比由吸收层形成的吸收层的组成或材料形成的吸收层更大的带隙的晶体层，所述组合物或材料与形成在吸收光信号的化合物半导体和Si 可以有意地用n或p型杂质掺杂晶体层，以消除存在于化合物半导体的结界面和Si表面上的存在的氧化物的杂质的电学影响。

10. 发明授权

US06800914B2 Semiconductor photodetector device and manufacturing method thereof 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US06800914B2
公开(公告)日：2004-10-05
申请号：US10224115
申请日：2002-08-19
申请人： Kazuhiro Ito , Shigehisa Tanaka , Sumiko Fujisaki , Yasunobu Matsuoka , Takashi Toyonaka
发明人： Kazuhiro Ito , Shigehisa Tanaka , Sumiko Fujisaki , Yasunobu Matsuoka , Takashi Toyonaka
IPC分类号： H01L31107
CPC分类号： H01L31/107
摘要： Reducing a dark current in a semiconductor photodetector provided with a second mesa including an regrown layer around a first mesa. An n-type buffer layer, a n-type multiplication layer, a p-type field control layer, a p-type absorption layer, a cap layer made of p-type InAlAs crystal, and a p-type contact layer 107 are made to grow on a main surface of a n-type substrate. Thereafter the p-type contact layer, the p-type cap layer, the p-type absorption layer and the p-type field control layer are patterned to form a first mesa. Next, after making a p-type regrown layer selectively grow around the first mesa or by forming a groove in the regrow layer located in a vicinity of the p-type cap type during a step of the selective growth, the p-type cap layer containing Al and the regrow layer are separated owing to the groove such that no current path is formed between both layers.
摘要翻译：在具有围绕第一台面的重新生长层的第二台面的半导体光电检测器中减小暗电流。制作n型缓冲层，n型倍增层，p型场控制层，p型吸收层，由p型InAlAs晶体制成的覆盖层和p型接触层107 在n型衬底的主表面上生长。此后，对p型接触层，p型覆盖层，p型吸收层和p型场控制层进行图案化以形成第一台面。接下来，在选择性生长的步骤中，使p型再生长层选择性地生长在第一台面周围或者通过在位于p型帽类型附近的再生层中形成沟槽，p型覆盖层含有Al并且再生层由于槽而分离，使得在两层之间不形成电流路径。

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