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1. 发明授权

US06433345B1 Fluorescence observing apparatus 失效
标题翻译：荧光观察装置
公开(公告)号：US06433345B1
公开(公告)日：2002-08-13
申请号：US09611972
申请日：2000-07-06
申请人： Katsumi Hayashi , Toshiro Hayakawa , Yoji Okazaki
发明人： Katsumi Hayashi , Toshiro Hayakawa , Yoji Okazaki
IPC分类号： F21V916
CPC分类号： G01N21/6456 , A61B1/043 , A61B1/063 , A61B1/0638 , A61B1/128 , A61B5/0071 , A61B5/0084 , G01N21/645 , G01N2021/6484 , G01N2201/0612
摘要： A fluorescence observing apparatus including a light source for emitting excitation light, an excitation light irradiation section for irradiating the excitation light to a sample, and a fluorescence measurement section for measuring fluorescence emitted from the sample by the irradiation of the excitation light. The temperature of the light source is always sensed by a thermistor, and a Peltier element disposed in direct contact with the light source is cooled by a control section so that the temperature of the light source is maintained at 20° C. or less.
摘要翻译：包括用于发射激发光的光源的荧光观察装置，用于将激发光照射到样品的激发光照射部分和用于通过照射激发光来测量从样品发射的荧光的荧光测量部分。光源的温度总是由热敏电阻感测，并且与光源直接接触的珀耳帖元件被控制部分冷却，使得光源的温度保持在20℃以下。

2. 发明授权

US07062311B1 Fluorescence observing apparatus 失效
标题翻译：荧光观察装置
公开(公告)号：US07062311B1
公开(公告)日：2006-06-13
申请号：US09611229
申请日：2000-07-06
申请人： Tomonari Sendai , Katsumi Hayashi , Kazuo Hakamata , Toshiro Hayakawa , Yoji Okazaki , Kenji Matsumoto
发明人： Tomonari Sendai , Katsumi Hayashi , Kazuo Hakamata , Toshiro Hayakawa , Yoji Okazaki , Kenji Matsumoto
IPC分类号： A61B6/00
CPC分类号： G01N21/6456 , A61B5/0071 , A61B5/0084 , G01N21/645 , G01N2021/6421 , G01N2201/0612
摘要： A fluorescence observing apparatus including a light source for emitting excitation light, an excitation light irradiation section for irradiating the excitation light to a sample, and a fluorescence measurement section for measuring fluorescence emitted from the sample by the irradiation of the excitation light. In the fluorescence observing apparatus, a GaN semiconductor laser is employed as the light source.
摘要翻译：包括用于发射激发光的光源的荧光观察装置，用于将激发光照射到样品的激发光照射部分和用于通过照射激发光来测量从样品发射的荧光的荧光测量部分。在荧光观察装置中，使用GaN半导体激光器作为光源。

3. 发明授权

US06760057B2 Optical recording method, apparatus, system and medium using high-power laser light 失效
标题翻译：使用大功率激光的光记录方法，装置，系统和介质
公开(公告)号：US06760057B2
公开(公告)日：2004-07-06
申请号：US10144863
申请日：2002-05-15
申请人： Toshiro Hayakawa , Nobufumi Mori , Yoji Okazaki , Hiroyuki Hiiro
发明人： Toshiro Hayakawa , Nobufumi Mori , Yoji Okazaki , Hiroyuki Hiiro
IPC分类号： G03C100
CPC分类号： B41J2/442
摘要： An optical recording method in which an effective recording sensitivity in the recording of image information on a photosensitive material is raised, whereby a productivity is enhanced owing to lowered energy (laser power) required for the recording or a heightened recording speed. An image is recorded by projecting a light beam onto the photosensitive material formed on a base material backing. The optical recording method includes the steps of: (a) successively outputting pulse light whose duty factor is at most 50%, from a light source; (b) modulating the pulse light output from the light source, in accordance with an image signal, and then projecting the modulated pulse light onto the photosensitive material; and (c) recording the image by causing the pulse light to scan the photosensitive material.
摘要翻译：提高了在感光材料上记录图像信息时的有效记录灵敏度的光记录方法，由于记录所需的能量（激光功率）降低或记录速度提高，从而提高了生产率。通过将光束投影到形成在基材背衬上的感光材料上来记录图像。光记录方法包括以下步骤：（a）从光源连续输出占空比最多为50％的脉冲光; （b）根据图像信号调制从光源输出的脉冲光，然后将调制的脉冲光投射到感光材料上; 和（c）通过使脉冲光扫描感光材料来记录图像。

4. 发明授权

US06885687B2 Semiconductor laser module having optical wavelength conversion element and semiconductor laser element which includes quantum-well sublayers having different thicknesses and/or compositions 有权
标题翻译：具有光波长转换元件和半导体激光元件的半导体激光器模块包括具有不同厚度和/或组成的量子阱子层
公开(公告)号：US06885687B2
公开(公告)日：2005-04-26
申请号：US09840025
申请日：2001-04-24
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： G02B6/02 , G02F1/377 , H01S5/06 , H01S5/065 , H01S5/14 , H01S5/323 , H01S5/00
CPC分类号： H01S5/141 , H01S3/109 , H01S5/005 , H01S5/0092 , H01S5/0656 , H01S5/143 , H01S5/146
摘要： A semiconductor laser module includes: a semiconductor laser element which emits laser light; a waveguide-type optical wavelength selection element which includes an optical waveguide, and selects a first portion of the laser light having a predetermined wavelength; and an optical wavelength conversion element which converts a second portion of the laser light having the predetermined wavelength to wavelength-converted laser light having a converted wavelength. The semiconductor laser element, the waveguide-type optical wavelength selection element, and the optical wavelength conversion element are coupled. The semiconductor laser element contains a multiple-quantum-well active layer including a plurality of quantum-well sublayers, where one of the plurality of quantum-well sublayers is different from another of the plurality of quantum-well sublayers in thickness and/or composition.
摘要翻译：半导体激光器模块包括：发射激光的半导体激光元件; 波导型光波长选择元件，其包括光波导，并且选择具有预定波长的激光的第一部分; 以及光波长转换元件，其将具有预定波长的激光的第二部分转换成具有转换波长的波长转换激光。半导体激光元件，波导型光波长选择元件和光波长转换元件被耦合。半导体激光元件包含多量子阱活性层，其包括多个量子阱子层，其中多个量子阱子层中的一个与厚度和/或组成中的多个量子阱子层中的另一个不同。

5. 发明授权

US06700912B2 High-output semiconductor laser element, high-output semiconductor laser apparatus and method of manufacturing the same 失效
标题翻译：高输出半导体激光元件，高输出半导体激光装置及其制造方法
公开(公告)号：US06700912B2
公开(公告)日：2004-03-02
申请号：US09793138
申请日：2001-02-27
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S500
CPC分类号： H01S5/2232 , H01S5/2036 , H01S5/223 , H01S5/2231 , H01S5/4043
摘要： A high-output semiconductor laser element includes a plurality of laser structures which are superposed on a substrate one on another with a P+N+-tunnel junction intervening between each pair of the laser structures. Each of the laser structures includes at least one active layer interposed between a P-type clad layer and a N-type clad layer. The active region of each of the laser structures is not smaller than 10 &mgr;m and not larger than 80 &mgr;m in width. The distance h between the active layers which are most distant from each other in the active layers of the laser structures is not larger than the width W of the active region which is the widest in the laser structures. The width of said semiconductor laser element is not smaller than W+2h.
摘要翻译：高输出半导体激光元件包括多个激光器结构，它们叠加在彼此之间的衬底上，并且在每对激光器结构之间插入有P + N + - 隧道结。每个激光结构包括插入在P型覆盖层和N型覆盖层之间的至少一个有源层。每个激光结构的有源区不小于10μm，宽度不大于80μm。在激光结构的有源层中彼此最远的有源层之间的距离h不大于激光结构中最宽的有源区的宽度W. 所述半导体激光元件的宽度不小于W + 2h。

6. 发明授权

US5196369A Method of producing a light emitting diode array device 失效
标题翻译：制造发光二极管阵列器件的方法
公开(公告)号：US5196369A
公开(公告)日：1993-03-23
申请号：US676652
申请日：1991-03-28
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01L21/225 , H01L21/306 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/40
CPC分类号： H01L33/305 , H01L21/2258 , H01L21/30612 , H01L27/153 , Y10S148/099
摘要： A method of fabricating light emitting diode array devices is provided, said method comprising the steps of layering through crystal growth the second semiconductor layer with an impurity serving as the diffusion source on the first semiconductor layer, removing by etching the area of said second semiconductor layer other than the island-like area at the location corresponding to the location where light emitting diodes are to be formed, and diffusing said impurity on said first semiconductor layer from said island-like area as the diffusion source. According to this method, such complicated process as gaseous phase diffusion, depositing ZnO film as the diffusion source, etc. may be eliminated.
摘要翻译：提供一种制造发光二极管阵列器件的方法，所述方法包括以下步骤：在第一半导体层上分层通过晶体生长第二半导体层和杂质作为扩散源，通过蚀刻去除所述第二半导体层的区域除了在与要形成发光二极管的位置相对应的位置处的岛状区域之外，并且从所述岛状区域扩散所述第一半导体层上的杂质作为扩散源。根据该方法，可以消除诸如气相扩散，沉积ZnO膜作为扩散源等复杂的过程。

7. 发明授权

US5105236A Heterojunction light-emitting diode array 失效
标题翻译：异质结发光二极管阵列
公开(公告)号：US5105236A
公开(公告)日：1992-04-14
申请号：US676617
申请日：1991-03-28
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01L27/15 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/30 , H01L33/40 , H01L33/46 , H01L33/58
CPC分类号： H01L33/06 , B82Y20/00 , H01L27/153 , H01L33/0012 , H01L33/0025
摘要： A light-emitting diode array is fabricated by forming a light-emitting diode heterojunction at the interface between a superlattice layer comprised of alternations of a multiplicity of semiconductor layers that have different energy gaps, and a doped diffusion mixed region having a larger energy gap than that of the superlattice layer which is formed by impurity doping of part of the said superlattice layer. The light-emitting diode array thus formed exhibits low optical crosstalk and good diode uniformity.
摘要翻译：通过在由具有不同能隙的多个半导体层的交替构成的超晶格层之间的界面处形成发光二极管异质结，并且具有比具有不同能隙的多个半导体层的掺杂扩散混合区域，制造发光二极管阵列通过杂质掺杂部分所述超晶格层形成的超晶格层的厚度。由此形成的发光二极管阵列表现出低的光串扰和良好的二极管均匀性。

8. 发明授权

US5001522A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US5001522A
公开(公告)日：1991-03-19
申请号：US274074
申请日：1988-11-21
申请人： Kosei Takahashi , Toshiro Hayakawa , Takahiro Suyama , Masafumi Kondo
发明人： Kosei Takahashi , Toshiro Hayakawa , Takahiro Suyama , Masafumi Kondo
IPC分类号： G02F1/313 , G02F1/015 , G02F1/017 , G02F1/35 , G02F1/355 , G02F3/02
CPC分类号： B82Y20/00 , G02F1/017 , G02F3/026
摘要： An optical semiconductor device is disclosed that comprises a quantum-well structure as an active region and exhibits a nonlinear optical effect with regard to light of energy near the band gap between the allowed band edges in the active region. The quantum-well structure of this device is composed of alternate layers consisting of at least one first semiconductor layer with a thickness smaller than the de Broglie wavelength of carriers and at least two second semiconductor layers with a band gap greater than that of the first semiconductor layer, the alternate layers being formed along a crystal orientation in the zinc-blende structure. The second semiconductor layers mentioned above are of an indirect transition type.

9. 发明授权

US4890293A Semiconductor laser device 失效
公开(公告)号：US4890293A
公开(公告)日：1989-12-26
申请号：US255049
申请日：1988-10-07
申请人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4031
摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.

10. 发明授权

US4769822A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4769822A
公开(公告)日：1988-09-06
申请号：US910530
申请日：1986-09-23
申请人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
发明人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/34 , H01S3/19
CPC分类号： H01S5/12 , H01S5/1237 , H01S5/2059 , H01S5/2231 , H01S5/3428
摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.
摘要翻译：一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层和第二覆层。

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