专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06721024B1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06721024B1
公开(公告)日：2004-04-13
申请号：US09612389
申请日：2000-07-07
申请人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
发明人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
IPC分类号： G02F113
CPC分类号： G02F1/133707 , G02F1/133753 , G02F1/1397 , G02F2001/133374 , G02F2001/133757
摘要： The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched by the first and second substrates. The first substrate includes polymer walls made of a transparent resin, the liquid crystal layer has a plurality of liquid crystal regions separated from one another by the polymer walls, and liquid crystal molecules in the plurality of liquid crystal regions are aligned axially symmetrically with respect to respective axes formed in the plurality of liquid crystal regions, the axes being vertical to a surface of the first substrate, and liquid crystal molecules above the polymer walls are aligned axially symmetrically with respect to respective axes formed on the polymer walls, the axes being vertical to the surface of the first substrate.
摘要翻译：本发明的液晶显示装置包括第一基板，第二基板以及被第一基板和第二基板夹持的液晶层。第一基板包括由透明树脂制成的聚合物壁，液晶层具有通过聚合物壁彼此分离的多个液晶区域，并且多个液晶区域中的液晶分子相对于形成在多个液晶区域中的各轴，该轴垂直于第一基板的表面，并且聚合物壁上方的液晶分子相对于形成在聚合物壁上的相应轴线轴对称地排列，轴是垂直的到第一基板的表面。

2. 发明授权

US06266122B1 Liquid crystal display device and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06266122B1
公开(公告)日：2001-07-24
申请号：US09329237
申请日：1999-06-10
申请人： Katsuhiko Kishimoto , Kenji Hamada , Masato Imai
发明人： Katsuhiko Kishimoto , Kenji Hamada , Masato Imai
IPC分类号： G02F11339
CPC分类号： G02F1/133377 , G02F1/133707
摘要： A liquid crystal display device of the present invention includes: a first substrate and a second substrate; and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes a polymer wall formed of transparent resin, the liquid crystal layer includes a plurality of liquid crystal regions partitioned by the polymer wall, and liquid crystal molecules in the plurality of liquid crystal regions are aligned in axial symmetry, with respect to an axis in a direction substantially perpendicular to a surface of the first substrate.
摘要翻译：本发明的液晶显示装置包括：第一基板和第二基板; 以及插入在第一基板和第二基板之间的液晶层。第一基板包括由透明树脂形成的聚合物壁，液晶层包括由聚合物壁分隔的多个液晶区域，并且多个液晶区域中的液晶分子相对于轴在基本上垂直于第一基板的表面的方向上。

3. 发明授权

US09261259B2 Laser-beam utilization device and vehicle headlight 有权
标题翻译：激光束利用装置和车头灯
公开(公告)号：US09261259B2
公开(公告)日：2016-02-16
申请号：US14127127
申请日：2012-05-25
申请人： Takeshi Shiomi , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata , Koji Takahashi , Katsuhiko Kishimoto
发明人： Takeshi Shiomi , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata , Koji Takahashi , Katsuhiko Kishimoto
IPC分类号： B60Q1/00 , F21V9/08 , F21S8/10 , F21V7/22 , F21V9/16 , F21Y101/02
CPC分类号： F21V9/08 , B60Q1/0023 , F21S41/14 , F21S41/141 , F21S41/16 , F21S41/285 , F21V7/22 , F21V9/30 , F21Y2115/10 , F21Y2115/30
摘要： A headlamp (1) that utilizes a laser beam includes a scattered-light emitting unit (21) that emits scattered light upon receipt of a laser beam deviated from a predetermined path through which the laser beam is to pass or a predetermined irradiation region that is to be irradiated by the laser beam.
摘要翻译：使用激光束的前照灯（1）包括散射光发射单元（21），该散射光发射单元（21）在接收到从激光束将要通过的预定路径偏离的激光束时发射散射光，或者预定的照射区域是被激光束照射。

4. 发明授权

US09115873B2 Lighting device 有权
标题翻译：照明设备
公开(公告)号：US09115873B2
公开(公告)日：2015-08-25
申请号：US14233926
申请日：2012-07-11
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： F21V14/08 , F21V29/02 , F21V9/16 , F21V29/70 , F21S8/10 , F21K99/00 , F21V7/06 , F21Y101/02 , F21V13/08 , F21V29/89
CPC分类号： F21V9/30 , F21K9/60 , F21K9/64 , F21S41/14 , F21S41/16 , F21S45/43 , F21V7/06 , F21V13/08 , F21V14/08 , F21V29/70 , F21V29/74 , F21V29/89 , F21Y2115/10 , F21Y2115/30
摘要： Provided is a lighting device that can suppress decrease in its luminous efficiency and shortening of its life. A lighting device (1) includes a fluorescent member (4) which is irradiated with laser light emitted by a semiconductor laser (2) and emits fluorescent light, a rotation mechanism (6) which rotates the fluorescent member, and a reflecting member (7) which reflects the fluorescent light emitted by the fluorescent member toward the outside.
摘要翻译：提供了能够抑制发光效率降低和寿命缩短的照明装置。照明装置（1）包括：用半导体激光器（2）发射的激光照射荧光灯的荧光部件（4），使荧光部件旋转的旋转机构（6）;以及反射部件），其将由荧光部件发出的荧光反射向外部。

5. 发明授权

US08919977B2 Lamp comprising a phosphor, radiation source, optical system and heatsink 有权
标题翻译：灯包括磷光体，辐射源，光学系统和散热器
公开(公告)号：US08919977B2
公开(公告)日：2014-12-30
申请号：US13577277
申请日：2011-02-09
申请人： David James Montgomery , James Rowland Suckling , Katsuhiko Kishimoto
发明人： David James Montgomery , James Rowland Suckling , Katsuhiko Kishimoto
IPC分类号： F21V29/00 , F21K99/00 , F21S8/10 , G03B21/20 , F21Y101/02
CPC分类号： F21S41/321 , F21K9/61 , F21K9/64 , F21S41/155 , F21S41/16 , F21S45/47 , F21V29/70 , F21Y2115/10 , F21Y2115/30 , G03B21/204
摘要： A lamp comprises a thin layer of phosphor (105,113) which is irradiated (46), for example by ultraviolet radiation, by a source which typically comprises a laser diode and a condenser (101,111). This causes the phosphor (105,113) to emit visible light with a Lambertion-type emission pattern. An optical system such as a reflector (102,115) concentrates the light from the phosphor (105,113). The phosphor (105,113) is thermally connected to a heatsink (103,116), of example by a plate (114) of sapphire glass, so as to dissipate the heat produced by the phosphor (105,113). The phosphor (105) may be mounted on a plane reflector (104) disposed on or comprising the heatsink (103) and facing a curved reflector (102) and the radiation source. Alternatively, the optical system may have an optical axis and the phosphor (113) may be substantially flat and inclined with the respect to the optical axis.
摘要翻译：灯包括由通常包括激光二极管和冷凝器（101,111）的源照射（46）例如紫外线辐射的薄层的磷光体（105,113）。这使得荧光体（105,113）以Lambertion型发射图案发射可见光。诸如反射器（102,115）的光学系统集中来自磷光体（105,113）的光。荧光体（105,113）例如由蓝宝石玻璃板（114）热连接到散热片（103,116），以散发由荧光体（105,113）产生的热量。荧光体（105）可以安装在设置在散热器（103）上或包括散热器（103）并且面向弯曲反射器（102）和辐射源的平面反射器（104）上。或者，光学系统可以具有光轴，并且磷光体（113）可以基本上平坦并且相对于光轴倾斜。

6. 发明授权

US08536774B2 Vehicle headlamp and illuminating device 有权
公开(公告)号：US08536774B2
公开(公告)日：2013-09-17
申请号：US12957998
申请日：2010-12-01
申请人： Katsuhiko Kishimoto , Hidenori Kawanishi
发明人： Katsuhiko Kishimoto , Hidenori Kawanishi
IPC分类号： H01J1/62 , F21V9/16 , B60Q1/00
摘要： A headlamp 1 includes a laser diode 3 that emits a laser beam, a light emitting part 7 that emits light upon receiving the laser beam emitted from the laser diode 3, and a reflection mirror 8 that reflects the light emitted from the light emitting part 7. According to the headlamp 1, the light emitting part 7 has a luminance greater than 25 cd/mm2, and an area size of an aperture plane 8a perpendicular to a direction in which an incoherent light travels outward from the headlamp 1 is less than 2000 mm2.

7. 发明申请

US20090275160A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20090275160A1
公开(公告)日：2009-11-05
申请号：US12500442
申请日：2009-07-09
申请人： Shuichi HIRUKAWA , Katsuhiko Kishimoto
发明人： Shuichi HIRUKAWA , Katsuhiko Kishimoto
IPC分类号： H01L21/20
CPC分类号： H01L25/167 , B82Y20/00 , H01L2924/0002 , H01S5/0425 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/22 , H01S5/34313 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component.
摘要翻译：在p型覆层之后，在n型衬底上依次形成蚀刻速率降低层和p型接触层，形成蚀刻掩模。然后，通过使用蚀刻掩模，用蚀刻剂在蚀刻掩模外部的区域中部分蚀刻p型接触层，蚀刻速率降低层和p型覆层。此时，蚀刻速率降低层的蚀刻剂的层的蚀刻速度比p型覆层和p型接触层的蚀刻速度慢。然后，形成金属薄膜，使得膜在连续地涂覆在蚀刻步骤之后留下的上述层的脊的上表面和侧表面。在涂有薄膜的表面上的法线矢量具有向上的分量。

8. 发明授权

US07123641B2 Semiconductor laser device and optical disc unit 失效
标题翻译：半导体激光器件和光盘单元
公开(公告)号：US07123641B2
公开(公告)日：2006-10-17
申请号：US10788411
申请日：2004-03-01
申请人： Shuichi Hirukawa , Hidenori Kawanishi , Katsuhiko Kishimoto
发明人： Shuichi Hirukawa , Hidenori Kawanishi , Katsuhiko Kishimoto
IPC分类号： H01S5/323
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/2223 , H01S5/2231 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S5/34373
摘要： In a semiconductor laser device having an oscillation wavelength of larger than 760 nm and smaller than 800 nm, on an n-type GaAs substrate (101), there are stacked in sequence an n-type first and second lower cladding layers (103, 104), a lower guide layer (106), a strained InGaAsP multiquantum well active layer (107), an upper guide layer (109), and a p-type upper cladding layer (110). Since the lower guide layer (106) is formed of InGaP, leakage of carriers from an active region is reduced. Also, since the upper guide layer (109) is formed of AlGaAs, an overflow of carriers (electrons in particular) is suppressed.
摘要翻译：在具有大于760nm且小于800nm的振荡波长的半导体激光器件中，在n型GaAs衬底（101）上依次堆叠n型第一和第二下覆层（103,104 ），下引导层（106），应变InGaAsP多量阱有源层（107），上引导层（109）和p型上覆层（110）。由于下引导层（106）由InGaP形成，因此载流子从有源区域泄漏减少。此外，由于上引导层（109）由AlGaAs形成，因此抑制载流子（特别是电子）的溢出。

9. 发明申请

US20060067374A1 Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 失效
标题翻译：半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统
公开(公告)号：US20060067374A1
公开(公告)日：2006-03-30
申请号：US11210792
申请日：2005-08-25
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/222 , H01S5/2222
摘要： In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from the side in contact with the second conductive type semiconductor layer group of the layers 108 through 114. The refractive index of the Ag layer 115a is sufficiently smaller than the refractive index of the semiconductor material used for the semiconductor layer group of the layers 108 through 114. Therefore, the oscillation laser light can be confined in the semiconductor layer group of the layers 108 through 114 without leaking toward the p-side electrode 115.
摘要翻译：在本发明的半导体激光器件中，形成在层108至114的第二导电类型半导体层组上的p侧电极115包括Ag层115a，Pd层115b和Au层115c，从与层108至114的第二导电类型半导体层组接触的一侧的顺序。 Ag层115a的折射率足够小于用于层108至114的半导体层组的半导体材料的折射率。因此，振荡激光可以限制在层108到114的半导体层组中，而不会向p侧电极115泄漏。

10. 发明申请

US20050176165A1 Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system 有权
标题翻译：半导体装置，半导体激光装置，半导体装置的制造方法，半导体激光装置的制造方法，光盘装置以及光传输系统
公开(公告)号：US20050176165A1
公开(公告)日：2005-08-11
申请号：US11050289
申请日：2005-02-04
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： H01S5/22 , G11B7/125 , H01L21/50 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , G11B7/127 , H01L2224/45144 , H01L2224/48091 , H01L2224/4911 , H01L2924/181 , H01L2924/19107 , H01S5/02248 , H01S5/02288 , H01S5/0421 , H01S5/0425 , H01S5/2081 , H01S5/2206 , H01S5/2213 , H01S5/2231 , H01S5/305 , H01S5/3213 , H01S5/34313 , H01S5/34373 , H01S2304/04 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety of which, including lowermost layer, is second conductivity-type. On the main structure member, there is also formed a second substructure member spatially separated from the first substructure member. The second substructure member has a current block layer of a semiconductor layer on the second conductivity-type structure identical to the first substructure member. In the semiconductor device, there is further provided a p-side electrode formed on the first and second substructure members and between the first and second substructure members to connect therebetween.
摘要翻译：半导体器件具有层压在第一导电型半导体衬底上的主要结构件。在主结构上，形成第一子结构构件，其全部包括最下层是第二导电型。在主结构构件上，还形成了与第一子结构构件空间分离的第二子结构构件。第二子结构构件具有与第一子结构构件相同的第二导电类型结构上的半导体层的电流阻挡层。在半导体器件中，还设置有形成在第一和第二子结构元件上以及在第一和第二子结构元件之间连接的p侧电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式