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1. 发明授权

US06721024B1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06721024B1
公开(公告)日：2004-04-13
申请号：US09612389
申请日：2000-07-07
申请人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
发明人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
IPC分类号： G02F113
CPC分类号： G02F1/133707 , G02F1/133753 , G02F1/1397 , G02F2001/133374 , G02F2001/133757
摘要： The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched by the first and second substrates. The first substrate includes polymer walls made of a transparent resin, the liquid crystal layer has a plurality of liquid crystal regions separated from one another by the polymer walls, and liquid crystal molecules in the plurality of liquid crystal regions are aligned axially symmetrically with respect to respective axes formed in the plurality of liquid crystal regions, the axes being vertical to a surface of the first substrate, and liquid crystal molecules above the polymer walls are aligned axially symmetrically with respect to respective axes formed on the polymer walls, the axes being vertical to the surface of the first substrate.
摘要翻译：本发明的液晶显示装置包括第一基板，第二基板以及被第一基板和第二基板夹持的液晶层。第一基板包括由透明树脂制成的聚合物壁，液晶层具有通过聚合物壁彼此分离的多个液晶区域，并且多个液晶区域中的液晶分子相对于形成在多个液晶区域中的各轴，该轴垂直于第一基板的表面，并且聚合物壁上方的液晶分子相对于形成在聚合物壁上的相应轴线轴对称地排列，轴是垂直的到第一基板的表面。

2. 发明授权

US06266122B1 Liquid crystal display device and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06266122B1
公开(公告)日：2001-07-24
申请号：US09329237
申请日：1999-06-10
申请人： Katsuhiko Kishimoto , Kenji Hamada , Masato Imai
发明人： Katsuhiko Kishimoto , Kenji Hamada , Masato Imai
IPC分类号： G02F11339
CPC分类号： G02F1/133377 , G02F1/133707
摘要： A liquid crystal display device of the present invention includes: a first substrate and a second substrate; and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes a polymer wall formed of transparent resin, the liquid crystal layer includes a plurality of liquid crystal regions partitioned by the polymer wall, and liquid crystal molecules in the plurality of liquid crystal regions are aligned in axial symmetry, with respect to an axis in a direction substantially perpendicular to a surface of the first substrate.
摘要翻译：本发明的液晶显示装置包括：第一基板和第二基板; 以及插入在第一基板和第二基板之间的液晶层。第一基板包括由透明树脂形成的聚合物壁，液晶层包括由聚合物壁分隔的多个液晶区域，并且多个液晶区域中的液晶分子相对于轴在基本上垂直于第一基板的表面的方向上。

3. 发明申请

US20140185272A1 LIGHTING DEVICE 有权
标题翻译：照明设备
公开(公告)号：US20140185272A1
公开(公告)日：2014-07-03
申请号：US14233926
申请日：2012-07-11
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： F21V14/08 , F21V29/02 , F21V13/08
CPC分类号： F21V9/30 , F21K9/60 , F21K9/64 , F21S41/14 , F21S41/16 , F21S45/43 , F21V7/06 , F21V13/08 , F21V14/08 , F21V29/70 , F21V29/74 , F21V29/89 , F21Y2115/10 , F21Y2115/30
摘要： Provided is a lighting device that can suppress decrease in its luminous efficiency and shortening of its life. A lighting device (1) includes a fluorescent member (4) which is irradiated with laser light emitted by a semiconductor laser (2) and emits fluorescent light, a rotation mechanism (6) which rotates the fluorescent member, and a reflecting member (7) which reflects the fluorescent light emitted by the fluorescent member toward the outside.
摘要翻译：提供了能够抑制发光效率降低和寿命缩短的照明装置。照明装置（1）包括：用半导体激光器（2）发射的激光照射荧光灯的荧光部件（4），使荧光部件旋转的旋转机构（6）;以及反射部件），其将由荧光部件发出的荧光反射向外部。

4. 发明授权

US08569942B2 Vehicle headlamp and illuminating device 有权
标题翻译：汽车前大灯和照明装置
公开(公告)号：US08569942B2
公开(公告)日：2013-10-29
申请号：US12957998
申请日：2010-12-01
申请人： Katsuhiko Kishimoto , Hidenori Kawanishi
发明人： Katsuhiko Kishimoto , Hidenori Kawanishi
IPC分类号： H01J1/62 , F21V9/16 , B60Q1/00
CPC分类号： F21S41/00 , F21S41/14 , F21S41/16 , F21S41/24 , F21S41/322 , F21W2107/10 , F21Y2115/10
摘要： A headlamp 1 includes a laser diode 3 that emits a laser beam, a light emitting part 7 that emits light upon receiving the laser beam emitted from the laser diode 3, and a reflection mirror 8 that reflects the light emitted from the light emitting part 7. According to the headlamp 1, the light emitting part 7 has a luminance greater than 25 cd/mm2, and an area size of an aperture plane 8a perpendicular to a direction in which an incoherent light travels outward from the headlamp 1 is less than 2000 mm2.
摘要翻译：前照灯1包括发射激光束的激光二极管3，在接收从激光二极管3发射的激光束时发光的发光部7和反射从发光部7射出的光的反射镜8 根据前照灯1，发光部7的亮度大于25cd / mm 2，与前照灯1的非相干光向外侧移动的方向垂直的孔径面8a的面积小于2000 mm2。

5. 发明申请

US20110148280A1 VEHICLE HEADLAMP AND ILLUMINATING DEVICE 有权
标题翻译：车辆头灯和照明装置
公开(公告)号：US20110148280A1
公开(公告)日：2011-06-23
申请号：US12957998
申请日：2010-12-01
申请人： Katsuhiko Kishimoto , Hidenori Kawanishi
发明人： Katsuhiko Kishimoto , Hidenori Kawanishi
IPC分类号： H01J1/62
CPC分类号： F21S41/00 , F21S41/14 , F21S41/16 , F21S41/24 , F21S41/322 , F21W2107/10 , F21Y2115/10
摘要： A headlamp 1 includes a laser diode 3 that emits a laser beam, a light emitting part 7 that emits light upon receiving the laser beam emitted from the laser diode 3, and a reflection mirror 8 that reflects the light emitted from the light emitting part 7. According to the headlamp 1, the light emitting part 7 has a luminance greater than 25 cd/mm2, and an area size of an aperture plane 8a perpendicular to a direction in which an incoherent light travels outward from the headlamp 1 is less than 2000 mm2.
摘要翻译：前照灯1包括发射激光束的激光二极管3，在接收从激光二极管3发射的激光束时发光的发光部7和反射从发光部7射出的光的反射镜8 根据前照灯1，发光部7的亮度大于25cd / mm 2，与前照灯1的非相干光向外侧移动的方向垂直的孔径面8a的面积小于2000 mm2。

6. 发明申请

US20110084609A1 ILLUMINATION DEVICE, AUTOMOTIVE LIGHTING EQUIPMENT, AND VEHICLE 有权
标题翻译：照明设备，汽车照明设备和车辆
公开(公告)号：US20110084609A1
公开(公告)日：2011-04-14
申请号：US12885073
申请日：2010-09-17
申请人： Yoshinobu KAWAGUCHI , Kenichi Yoshimura , Masamichi Harada , Katsuhiko Kishimoto
发明人： Yoshinobu KAWAGUCHI , Kenichi Yoshimura , Masamichi Harada , Katsuhiko Kishimoto
IPC分类号： B60Q1/08 , H05B37/02
CPC分类号： F21V23/0442 , F21S41/14 , F21S41/16 , F21S45/10 , F21V9/30 , F21W2102/00 , F21Y2115/30 , H01S5/005
摘要： An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.
摘要翻译：提供了一种提高眼睛安全性的照明装置。照明装置包括：半导体激光元件，用作发射激光的激发光源; 荧光板，其包含用于发射所需颜色的光的荧光物质，并且用从所述半导体激光元件发射的激光照射; 检测从荧光板反射的光的受光元件部; 以及光源控制部，其基于来自所述受光元件部的检测信号，控制从所述半导体激光元件发出的激光。

7. 发明授权

US07892860B2 Semiconductor laser chip and method of formation thereof 有权
标题翻译：半导体激光芯片及其形成方法
公开(公告)号：US07892860B2
公开(公告)日：2011-02-22
申请号：US12078258
申请日：2008-03-28
申请人： Susumu Ohmi , Katsuhiko Kishimoto
发明人： Susumu Ohmi , Katsuhiko Kishimoto
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L22/26 , H01S5/0014 , H01S5/0425 , H01S5/209 , H01S5/2214 , H01S5/2277 , H01S5/34306 , H01S5/3436 , H01S2301/18 , H01S2304/00
摘要： A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.
摘要翻译：提供一种形成半导体激光器芯片的方法，其可以抑制层间不连续性，同时减少水平方向上的光辐射角度的制造变化。该方法包括在n型GaAs衬底上形成由包括蚀刻标记层的多个半导体层构成的半导体元件层，在半导体元件层的接触层中形成凹陷的步骤具有未到达蚀刻标记层的深度的部分，以及通过干蚀刻蚀刻半导体元件层来形成脊部的步骤，同时用激光监测凹陷部分的底部区域中的蚀刻深度。

8. 发明授权

US07593442B2 Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 失效
标题翻译：半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统
公开(公告)号：US07593442B2
公开(公告)日：2009-09-22
申请号：US11210792
申请日：2005-08-25
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： H01S3/00 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/222 , H01S5/2222
摘要： In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from the side in contact with the second conductive type semiconductor layer group of the layers 108 through 114. The refractive index of the Ag layer 115a is sufficiently smaller than the refractive index of the semiconductor material used for the semiconductor layer group of the layers 108 through 114. Therefore, the oscillation laser light can be confined in the semiconductor layer group of the layers 108 through 114 without leaking toward the p-side electrode 115.
摘要翻译：在本发明的半导体激光器件中，形成在层108至114的第二导电类型半导体层组上的p侧电极115包括Ag层115a，Pd层115b和Au层115c，与层108至114的第二导电类型半导体层组接触。Ag层115a的折射率足够小于用于层108至114的半导体层组的半导体材料的折射率。因此，振荡激光可以限制在层108到114的半导体层组中，而不会向p侧电极115泄漏。

9. 发明申请

US20080240188A1 Semiconductor laser chip and method of formation thereof 有权
标题翻译：半导体激光芯片及其形成方法
公开(公告)号：US20080240188A1
公开(公告)日：2008-10-02
申请号：US12078258
申请日：2008-03-28
申请人： Susumu Ohmi , Katsuhiko Kishimoto
发明人： Susumu Ohmi , Katsuhiko Kishimoto
IPC分类号： H01L21/66 , H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L22/26 , H01S5/0014 , H01S5/0425 , H01S5/209 , H01S5/2214 , H01S5/2277 , H01S5/34306 , H01S5/3436 , H01S2301/18 , H01S2304/00
摘要： A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.
摘要翻译：提供一种形成半导体激光器芯片的方法，其可以抑制层间不连续性，同时减少水平方向上的光辐射角度的制造变化。该方法包括在n型GaAs衬底上形成由包括蚀刻标记层的多个半导体层构成的半导体元件层，在半导体元件层的接触层中形成凹陷的步骤具有未到达蚀刻标记层的深度的部分，以及通过干蚀刻蚀刻半导体元件层来形成脊部的步骤，同时用激光监测凹陷部分的底部区域中的蚀刻深度。

10. 发明授权

US07339967B2 Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system 有权
标题翻译：半导体装置，半导体激光装置，半导体装置的制造方法，半导体激光装置的制造方法，光盘装置以及光传输系统
公开(公告)号：US07339967B2
公开(公告)日：2008-03-04
申请号：US11050289
申请日：2005-02-04
申请人： Katsuhiko Kishimoto
发明人： Katsuhiko Kishimoto
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G11B7/127 , H01L2224/45144 , H01L2224/48091 , H01L2224/4911 , H01L2924/181 , H01L2924/19107 , H01S5/02248 , H01S5/02288 , H01S5/0421 , H01S5/0425 , H01S5/2081 , H01S5/2206 , H01S5/2213 , H01S5/2231 , H01S5/305 , H01S5/3213 , H01S5/34313 , H01S5/34373 , H01S2304/04 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety of which, including lowermost layer, is second conductivity-type. On the main structure member, there is also formed a second substructure member spatially separated from the first substructure member. The second substructure member has a current block layer of a semiconductor layer on the second conductivity-type structure identical to the first substructure member. In the semiconductor device, there is further provided a p-side electrode formed on the first and second substructure members and between the first and second substructure members to connect therebetween.
摘要翻译：半导体器件具有层压在第一导电型半导体衬底上的主要结构件。在主结构上，形成第一子结构构件，其全部包括最下层是第二导电型。在主结构构件上，还形成了与第一子结构构件空间分离的第二子结构构件。第二子结构构件具有与第一子结构构件相同的第二导电类型结构上的半导体层的电流阻挡层。在半导体器件中，还设置有形成在第一和第二子结构元件上以及在第一和第二子结构元件之间连接的p侧电极。

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