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1. 发明授权

US08148977B2 Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing system 失效
标题翻译：用于表征磁性增强的衬底处理系统中的磁场的装置
公开(公告)号：US08148977B2
公开(公告)日：2012-04-03
申请号：US12360664
申请日：2009-01-27
申请人： Kartik Ramaswamy , Hiroji Hanawa , Lawrence Wong , Chinh Dinh
发明人： Kartik Ramaswamy , Hiroji Hanawa , Lawrence Wong , Chinh Dinh
IPC分类号： G01R33/02
CPC分类号： G01R33/0206 , G01R33/0023
摘要： Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.
摘要翻译：本文提供了用于表征在基板处理系统中形成的磁场的传感器装置的实施例及其使用方法。在一些实施例中，用于表征衬底处理系统中的磁场的装置可以包括具有基本上类似于在衬底处理系统中要处理的衬底的形式的载体。一个或多个磁传感器设置在载体上，用于测量在x，y和z方向上在处理系统中形成的磁场的大小。微处理器耦合到一个或多个磁性传感器以对表示在每个传感器的位置附近的x，y和z方向上的磁场的大小的数据进行采样。存储器件耦合到微处理器以存储采样数据。提供电源以向每个磁传感器和微处理器供电。

2. 发明申请

US20080179181A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH VARIABLE HEIGHT GROUND RETURN PATH TO CONTROL PLASMA ION DENSITY UNIFORMITY 有权
标题翻译：在具有可变高度接地返回路径的等离子体反应器中处理工件的方法来控制等离子体密度均匀性
公开(公告)号：US20080179181A1
公开(公告)日：2008-07-31
申请号：US11733984
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H05H1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要翻译：用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极工件支撑电极为频率f 1。该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

3. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

4. 发明申请

US20080179011A1 PLASMA REACTOR WITH WIDE PROCESS WINDOW EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：等离子体反应器，具有采用多个VHF源的宽过程窗口
公开(公告)号：US20080179011A1
公开(公告)日：2008-07-31
申请号：US11734040
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要翻译：等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。

5. 发明授权

US08080479B2 Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator 失效
标题翻译：通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性
公开(公告)号：US08080479B2
公开(公告)日：2011-12-20
申请号：US11733858
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
摘要翻译：在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

6. 发明申请

US20080182418A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY CONTROLLING A VARIABLE FREQUENCY COUPLED TO A HARMONIC RESONATOR 失效
标题翻译：通过控制与谐波谐振器耦合的可变频率，通过控制波形的等离子体处理均匀性
公开(公告)号：US20080182418A1
公开(公告)日：2008-07-31
申请号：US11733858
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
摘要翻译：在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

7. 发明申请

US20080182417A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY APPORTIONING GROUND RETURN PATH IMPEDANCES AMONG PLURAL VHF SOURCES 失效
标题翻译：等离子体过程通过分配地面返回路径在一个等离子体频率范围内均匀化
公开(公告)号：US20080182417A1
公开(公告)日：2008-07-31
申请号：US11733767
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.
摘要翻译：在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

8. 发明授权

US07968469B2 Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity 有权
标题翻译：在具有可变高度接地返回路径的等离子体反应器中处理工件的方法以控制等离子体离子密度均匀性
公开(公告)号：US07968469B2
公开(公告)日：2011-06-28
申请号：US11733984
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要翻译：用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率在第一VHF频率f1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极和工件支撑电极为频率f1。该方法还包括提供可变高度边缘的地面环形元件，并为频率f1提供通过边缘接地环形元件的接地返回路径。该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

9. 发明授权

US07884025B2 Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources 失效
标题翻译：通过在多个VHF源之间分配接地返回路径阻抗，在晶片上的等离子体工艺均匀性
公开(公告)号：US07884025B2
公开(公告)日：2011-02-08
申请号：US11733767
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.
摘要翻译：在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

10. 发明授权

US07879731B2 Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources 失效
标题翻译：通过在多个VHF源之间分配功率来提高晶片上的等离子体工艺均匀性
公开(公告)号：US07879731B2
公开(公告)日：2011-02-01
申请号：US11733764
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
摘要翻译：提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。该方法包括将相应的VHF频率f1和f2的相应RF功率源耦合到（a）电极中的相应电极或（b）共同的一个电极，其中f1足够高以产生中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。该方法还包括调整f1频率处的RF参数与f2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。

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