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1. 发明授权

US08906218B2 Apparatus and methods for uniformly forming porous semiconductor on a substrate 有权
标题翻译：在基板上均匀地形成多孔半导体的装置和方法
公开(公告)号：US08906218B2
公开(公告)日：2014-12-09
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： C25D5/18 , C25D7/12 , C25D11/32 , C25F7/00 , C25D11/02
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

2. 发明申请

US20120125256A1 APPARATUS AND METHOD FOR REPEATEDLY FABRICATING THIN FILM SEMICONDUCTOR SUBSTRATES USING A TEMPLATE 审中-公开
标题翻译：使用模板重新制造薄膜半导体衬底的装置和方法
公开(公告)号：US20120125256A1
公开(公告)日：2012-05-24
申请号：US13209390
申请日：2011-08-13
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Subramanian Tamilmani , Sam Tone Tor , Rahim Kavari , Rafael Ricolcol , George Kamian , Joseph Leigh
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Subramanian Tamilmani , Sam Tone Tor , Rahim Kavari , Rafael Ricolcol , George Kamian , Joseph Leigh
IPC分类号： C30B25/02
CPC分类号： H01L31/1892 , H01L31/02363 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.
摘要翻译：公开了一些机构，其中一些实施例中的半导体晶片，硅被重复地用作用于制造高效率的薄半导体太阳能电池基板的模板和载体。公开了能够以一致的质量和高产率重复使用这些模板的机制。

3. 发明授权

US08656860B2 High efficiency epitaxial chemical vapor deposition (CVD) reactor 有权
标题翻译：高效外延化学气相沉积（CVD）反应器
公开(公告)号：US08656860B2
公开(公告)日：2014-02-25
申请号：US12759820
申请日：2010-04-14
申请人： George Kamian , Mehrdad M. Moslehi
发明人： George Kamian , Mehrdad M. Moslehi
IPC分类号： B05C11/00
CPC分类号： C23C16/45502 , C23C16/45517 , C23C16/45591 , C23C16/4583 , C23C16/481 , C30B25/12 , C30B25/14
摘要： The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.
摘要翻译：本公开内容提出了具有改进的化学利用和成本效率的化学气相沉积反应器。本公开的晶片承载体可以以可堆叠的构造使用，以同时处理许多晶片。本公开的反应器可以是逆流耗尽型反应器，其倾向于提供均匀的膜厚度和高度的化学应用。

4. 发明授权

US07941039B1 Pedestal heat transfer and temperature control 有权
标题翻译：基座传热和温度控制
公开(公告)号：US07941039B1
公开(公告)日：2011-05-10
申请号：US11851310
申请日：2007-09-06
申请人： Krishnan Shrinivasan , Stephen V. Gentile , Peter Woytowitz , Sassan Roham , George Kamian , Michael Rivkin
发明人： Krishnan Shrinivasan , Stephen V. Gentile , Peter Woytowitz , Sassan Roham , George Kamian , Michael Rivkin
IPC分类号： A21B2/00 , C23C16/00
CPC分类号： C23C16/56 , H01L21/67103 , H01L21/67115
摘要： Provided herein are assemblies that, when coupled to an object, are capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. Applications include various integrated circuit fabrication processes that use such external sources to expose wafers to radiation. In certain embodiments, the assemblies include a pedestal for supporting the wafer or other object. In certain embodiments, the assemblies include a calibrated heat resistance that allows heat be conducted away from the pedestal and wafer to maintain the desired set-point temperature. In certain embodiments, the pedestal may have one or more protrusions used to dissipate or transfer heat from the pedestal to a heat sink. Also, in certain embodiments, the pedestal surface is configured to have a spectral reflectivity of desired values in such way as to reflect the wavelengths that are emitted by an external radiant heat source.
摘要翻译：本文提供的是当与物体耦合时能够将物体保持在均匀升高的温度同时从外部源除去大量热量的组件。应用包括使用这种外部源将晶片暴露于辐射的各种集成电路制造工艺。在某些实施例中，组件包括用于支撑晶片或其它物体的基座。在某些实施例中，组件包括校准的耐热性，其允许热量从基座和晶片导出以保持所需的设定点温度。在某些实施例中，基座可以具有用于将热量从基座散热或传递到散热器的一个或多个突起。而且，在某些实施例中，基座表面被配置为具有期望值的光谱反射率，以便反射由外部辐射热源发射的波长。

5. 发明授权

US5136975A Injector and method for delivering gaseous chemicals to a surface 失效
标题翻译：用于将气态化学品输送到表面的喷射器和方法
公开(公告)号：US5136975A
公开(公告)日：1992-08-11
申请号：US542243
申请日：1990-06-21
申请人： Lawrence D. Bartholomew , Kenneth M. Provancha , George Kamian , Jay B. DeDontney , Gregory M. McDaniel
发明人： Lawrence D. Bartholomew , Kenneth M. Provancha , George Kamian , Jay B. DeDontney , Gregory M. McDaniel
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/45514 , C23C16/45519 , C23C16/45595 , C23C16/54
摘要： What is disclosed is an injector of the type commonly used in atmospheric pressure chemical vapor deposition equipment. The injector includes a number of plates with a number of linear hole arrays. The plates are layered in order to produce a number of cascaded holes arrays. The layered plates define a hole matrix. A chute is positioned beneath the hole matrix. On both sides of the chute is a cooling plate. The chute includes a passage, the regions between the cooling plate and the chute form ducts. The top of the hole matrix receives a number of gases and discretely conveys them to the top of the individual cascaded hole arrays. The gaseous chemicals are then forced through the cascaded hole arrays which induces the gases to flow in an increasingly uniform manner. The gases are then individually fed to the passage and ducts which convey them to a region above the surface where the gases are exposed to one another, react and form a layer on the surface.
摘要翻译：所公开的是在大气压化学气相沉积设备中常用的注射器。喷射器包括具有多个线性孔阵列的多个板。这些板是分层的，以便产生多个级联的孔阵列。分层板定义孔矩阵。滑槽位于孔矩阵下方。在滑槽的两侧是冷却板。滑槽包括通道，冷却板和滑槽之间的区域形成管道。孔矩阵的顶部接收多个气体，并将其离散地传送到单个级联孔阵列的顶部。然后气态化学物质被迫通过级联的孔阵列，其引起气体以越来越均匀的方式流动。然后将气体单独地供给到通道和管道，其将它们传送到气体彼此暴露的表面之上的区域，在表面上反应并形成层。

6. 发明授权

US08137465B1 Single-chamber sequential curing of semiconductor wafers 有权
标题翻译：单腔连续固化半导体晶圆
公开(公告)号：US08137465B1
公开(公告)日：2012-03-20
申请号：US11115576
申请日：2005-04-26
申请人： Krishna Shrinivasan , Feng Wang , George Kamian , Steve Gentile , Mark Yam
发明人： Krishna Shrinivasan , Feng Wang , George Kamian , Steve Gentile , Mark Yam
IPC分类号： C23C16/48 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/56 , H01L21/67109 , H01L21/67115
摘要： The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.
摘要翻译：本发明涉及半导体晶片的固化。更具体地，本发明涉及包含多个固化站的固化室，每个固化站具有一个或多个UV光源。通过在每个站中顺序地暴露于光源来固化晶片。在一些实施例中，晶片在曝光期间相对于光源保持静止。在其它实施例中，在曝光期间在光源和晶片之间存在相对运动。本发明还提供了可以通过提供对晶片温度和UV强度的独立控制来独立地调节固化材料的交联，密度和增加应力的室。

7. 发明授权

US06561796B1 Method of semiconductor wafer heating to prevent bowing 有权
标题翻译：半导体晶片加热方法以防止弯曲
公开(公告)号：US06561796B1
公开(公告)日：2003-05-13
申请号：US09655753
申请日：2000-09-06
申请人： Martin M. Barrera , George Kamian , Edward J. McInerney , Craig L. Stevens
发明人： Martin M. Barrera , George Kamian , Edward J. McInerney , Craig L. Stevens
IPC分类号： F27D500
CPC分类号： C23C16/466 , C23C16/46 , C30B25/10 , C30B31/14 , H01L21/67109
摘要： Bowing of semiconductor wafers during heating is reduced by heating the wafers in a gas with a thermal conductivity and mean free path greater than that of oxygen, or by heating the wafers in a processing chamber under a pressure less than 0.1 Torr. In one embodiment, the high thermal conductivity gas is helium and heating in the helium takes place at a pressure less than 2.4 Torr.
摘要翻译：加热期间半导体晶片的弯曲通过加热具有导热性和平均自由程大于氧气的气体的晶片，或通过在小于0.1托的压力下加热处理室中的晶片而减少。在一个实施例中，高导热气体是氦气，并且氦气中的加热在小于2.4Torr的压力下进行。

8. 发明授权

US08951348B1 Single-chamber sequential curing of semiconductor wafers 有权
标题翻译：单腔连续固化半导体晶圆
公开(公告)号：US08951348B1
公开(公告)日：2015-02-10
申请号：US13370579
申请日：2012-02-10
申请人： Krishnan Shrinivasan , Feng Wang , George Kamian , Steve Gentile , Mark Yam
发明人： Krishnan Shrinivasan , Feng Wang , George Kamian , Steve Gentile , Mark Yam
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/56 , H01L21/67109 , H01L21/67115
摘要： The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.
摘要翻译：本发明涉及半导体晶片的固化。更具体地，本发明涉及包含多个固化站的固化室，每个固化站具有一个或多个UV光源。通过在每个站中顺序地暴露于光源来固化晶片。在一些实施例中，晶片在曝光期间相对于光源保持静止。在其它实施例中，在曝光期间在光源和晶片之间存在相对运动。本发明还提供了可以通过提供对晶片温度和UV强度的独立控制来独立地调节固化材料的交联，密度和增加应力的室。

9. 发明授权

US07327948B1 Cast pedestal with heating element and coaxial heat exchanger 有权
标题翻译：带加热元件和同轴热交换器的铸座
公开(公告)号：US07327948B1
公开(公告)日：2008-02-05
申请号：US11184101
申请日：2005-07-18
申请人： Krishnan Shrinivasan , Stephen Gentile , Peter Woytowitz , Sassan Roham , George Kamian
发明人： Krishnan Shrinivasan , Stephen Gentile , Peter Woytowitz , Sassan Roham , George Kamian
IPC分类号： A21B2/00 , C23C16/00
CPC分类号： C23C16/56 , H01L21/67109 , H01L21/67115
摘要： The present invention provides a heat transfer assembly that, when coupled to an object, is capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. The assembly may be contained in a pedestal for use in a UV-cure chamber. The heat transfer assembly includes a heating element to control the wafer temperature and a cooling element to remove incident IR heat from the wafer and pedestal. A heat resistant layer having a calibrated heat resistance is located between the heating and cooling elements and between the wafer and the cooling elements. The heat resistant layer is able to sustain high temperature gradient from the wafer to the coolant so that the coolant does not boil while permitting enough heat to be conducted away from the wafer to maintain the desired set-point temperature.
摘要翻译：本发明提供了一种传热组件，当与物体相连时，能够将物体保持在均匀的高温，同时从外部源除去大量的热量。组件可以容纳在用于UV固化室中的基座中。传热组件包括用于控制晶片温度的加热元件和用于从晶片和基座移除入射的IR热的冷却元件。具有校准的耐热性的耐热层位于加热和冷却元件之间以及晶片和冷却元件之间。耐热层能够承受从晶片到冷却剂的高温梯度，使得冷却剂不沸腾，同时允许足够的热量从晶片导出以保持所需的设定点温度。

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