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1. 发明授权

US5838045A Folded trench and RIE/deposition process for high-value capacitors 失效
标题翻译：用于高值电容器的折叠沟槽和RIE /沉积工艺
公开(公告)号：US5838045A
公开(公告)日：1998-11-17
申请号：US811982
申请日：1997-03-05
申请人： Karl Paul Ludwig Muller , Wesley C. Natzle
发明人： Karl Paul Ludwig Muller , Wesley C. Natzle
IPC分类号： H01L21/02 , H01L21/033 , H01L21/308 , H01L21/311 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10861 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L28/40
摘要： Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.
摘要翻译：可选择性蚀刻材料在材料体的开口中的各向同性沉积，随后是耐蚀刻材料的各向同性沉积形成掩模，用于在潜在的亚光刻尺寸下对可选择性蚀刻的材料进行各向异性蚀刻，以形成潜在的亚光刻特征沟。可以利用该过程形成折叠沟槽电容器，其中在其中形成有一个或多个直立和可能中空特征的沟槽; 对于给定的电荷存储容量或其组合，有效地乘以表面积和/或允许减小沟槽深度。可以使用诸如半球形晶粒硅沉积的其它表面处理来进一步增强沟槽的有效面积。亚光刻尺寸的隔离结构也可以通过在根据掩模形成的沟槽内沉积合适的材料来形成。

2. 发明授权

US5665622A Folded trench and rie/deposition process for high-value capacitors 失效
标题翻译：用于高值电容器的折叠沟槽和沉积工艺
公开(公告)号：US5665622A
公开(公告)日：1997-09-09
申请号：US404780
申请日：1995-03-15
申请人： Karl Paul Ludwig Muller , Wesley C. Natzle
发明人： Karl Paul Ludwig Muller , Wesley C. Natzle
IPC分类号： H01L21/02 , H01L21/033 , H01L21/308 , H01L21/311 , H01L21/8242 , H01L21/3065
CPC分类号： H01L27/10861 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L28/40
摘要： Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.
摘要翻译：可选择性蚀刻材料在材料体的开口中的各向同性沉积，随后是耐蚀刻材料的各向同性沉积形成掩模，用于在潜在的亚光刻尺寸下对可选择性蚀刻的材料进行各向异性蚀刻，以形成潜在的亚光刻特征沟。可以利用该过程形成折叠沟槽电容器，其中在其中形成有一个或多个直立和可能中空特征的沟槽; 对于给定的电荷存储容量或其组合，有效地乘以表面积和/或允许减小沟槽深度。可以使用诸如半球形晶粒硅沉积的其它表面处理来进一步增强沟槽的有效面积。亚光刻尺寸的隔离结构也可以通过在根据掩模形成的沟槽内沉积合适的材料来形成。

3. 发明授权

US5724144A Process monitoring and thickness measurement from the back side of a semiconductor body 失效
标题翻译：从半导体主体的背面进行过程监控和厚度测量
公开(公告)号：US5724144A
公开(公告)日：1998-03-03
申请号：US674855
申请日：1996-07-03
申请人： Karl Paul Ludwig Muller , Katsuya Okumura , Theodore G. Van Kessel
发明人： Karl Paul Ludwig Muller , Katsuya Okumura , Theodore G. Van Kessel
IPC分类号： G01B11/06 , H01L21/304 , H01L21/66
CPC分类号： G01B11/0683
摘要： The processing of a semiconductor body front side surface can be monitored in-situ, and thickness data for a body can be obtained ex-situ, by directing an infrared beam at the back side surface of the body. The light is reflected from front and back sides of a body portion to form primary and secondary reflections which are detected. An interference signal representative of interference fringes of the primary and secondary reflections is generated, and thickness data for the body or a body portion is calculated from the interference signal. In-situ monitoring of processes such as mechanical-chemical polishing, chemical vapor deposition, and plasma or reactive ion etching is achieved by providing a light passageway through a semiconductor body support such as a chuck or electrode, e.g., a cathode. In this manner, the process monitoring does not hinder, and is not hindered by, the processing steps and equipment.
摘要翻译：半导体本体侧表面的处理可以原位监测，通过将红外光束引导到身体的背面，可以非原位地获得身体的厚度数据。光从身体部分的前侧和后侧反射以形成检测到的主反射和次级反射。产生表示初级和次级反射的干涉条纹的干涉信号，并且根据干扰信号计算身体或身体部分的厚度数据。通过提供通过诸如卡盘或电极例如阴极的半导体主体支撑件的光通道来实现诸如机械 - 化学抛光，化学气相沉积和等离子体或反应离子蚀刻的工艺的原位监测。以这种方式，过程监控不妨碍加工步骤和设备的阻碍。

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