专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6102776A Apparatus and method for controlling polishing of integrated circuit substrates 有权
标题翻译：用于控制集成电路基板的抛光的装置和方法
公开(公告)号：US6102776A
公开(公告)日：2000-08-15
申请号：US225597
申请日：1999-01-06
申请人： Karl E. Boggs , Kenneth M. Davis , William F. Landers , Robert M. Merkling, Jr. , Michael L. Passow , Jeremy K. Stephens
发明人： Karl E. Boggs , Kenneth M. Davis , William F. Landers , Robert M. Merkling, Jr. , Michael L. Passow , Jeremy K. Stephens
IPC分类号： B24B37/013 , B24B49/04 , B24B49/10 , B24B49/00 , B24B51/00
CPC分类号： B24B37/013 , B24B49/04 , B24B49/10
摘要： A system for polishing a surface. The surface is positioned in contact with a rotating table having a polishing slurry or compound applied to a table surface. The pattern formed in the polishing compound as the table is rotated is monitored, and when the pattern dimensions reach a predetermined size, indicating a polished end point, the polisher ends polishing.
摘要翻译：用于抛光表面的系统。表面定位成与具有施加到台面的抛光浆料或化合物的旋转台接触。监视在作为工作台的抛光组合物中形成的图案旋转，并且当图案尺寸达到预定尺寸时，指示抛光的终点，抛光机结束抛光。

2. 发明授权

US06227948B1 Polishing pad reconditioning via polishing pad material as conditioner 失效
标题翻译：抛光垫通过抛光垫材料作为调理剂进行修复
公开(公告)号：US06227948B1
公开(公告)日：2001-05-08
申请号：US09532170
申请日：2000-03-21
申请人： Raymond M. Khoury , Robert M. Merkling, Jr. , Jose M. Ocasio , Uldis A. Ziemins
发明人： Raymond M. Khoury , Robert M. Merkling, Jr. , Jose M. Ocasio , Uldis A. Ziemins
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24D9/08
摘要： A method of reconditioning a polishing pad using a chemical-mechanical polishing apparatus is disclosed, wherein the polishing pad contacts a workpiece in the presence of a slurry to perform chemical-mechanical polishing on the workpiece. The method comprises contacting the polishing pad with a reconditioning pad. The reconditioning pad is made of a polishing pad material similar to that of the polishing pad.
摘要翻译：公开了一种使用化学机械抛光装置来修复抛光垫的方法，其中抛光垫在浆料存在下接触工件以在工件上进行化学机械抛光。该方法包括使抛光垫与修复垫接触。再生垫由与抛光垫类似的抛光垫材料制成。

3. 发明授权

US4528066A Selective anisotropic reactive ion etching process for polysilicide composite structures 失效
标题翻译：多晶硅复合结构的选择性各向异性反应离子蚀刻工艺
公开(公告)号：US4528066A
公开(公告)日：1985-07-09
申请号：US628558
申请日：1984-07-06
申请人： Robert M. Merkling, Jr. , David Stanasolovich
发明人： Robert M. Merkling, Jr. , David Stanasolovich
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/312 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/32137 , H01L21/312
摘要： A reactive ion etching technique is disclosed for etching a gate electrode out of layers of tungsten silicide and polycrystalline silicon without etching the underlying layer of silicon dioxide which serves as the gate dielectric and which covers the source and drain regions. The key feature of the invention, wherein the gate, which has been partially etched out of the tungsten silicide and polycrystalline silicon layers, is coated with poly tetra-fluoroethylene (teflon) to protect the sidewalls of the gate from being excessively etched in the lateral direction while the etching continues at the bottom on either side of the gate.The process is especially suitable for formation of tungsten silicide structures since no subsequent thermal steps are required which would otherwise cause a delamination of the tungsten silicide. In addition to eliminating undercutting, the process does not disturb the gate oxide over the source and drain areas, which would otherwise create a leaky device unsuitable for applications such as dynamic RAMs. The entire process can be carried out in a single pump down and therefore contamination levels can be minimized.
摘要翻译：公开了一种反应离子蚀刻技术，用于将栅极电极从硅化钨和多晶硅层之外蚀刻，而不会蚀刻用作栅极电介质并覆盖源极和漏极区域的二氧化硅的下层。本发明的关键特征在于，已经部分地从硅化钨和多晶硅层中蚀刻出的栅极涂覆有聚四氟乙烯（聚四氟乙烯），以保护栅极的侧壁在侧面被过度蚀刻而蚀刻在栅极的任一侧的底部继续蚀刻。该方法特别适合于形成硅化钨结构，因为不需要随后的热步骤，否则会导致硅化钨的分层。除了消除底切之外，该过程不会干扰源极和漏极区域上的栅极氧化物，否则将产生不适合于诸如动态RAM的应用的泄漏装置。整个过程可以在单个泵中进行，因此污染水平可以最小化。

4. 发明授权

US07056192B2 Ceria-based polish processes, and ceria-based slurries 失效
标题翻译：二氧化铈抛光工艺和二氧化铈基浆料
公开(公告)号：US07056192B2
公开(公告)日：2006-06-06
申请号：US10711369
申请日：2004-09-14
申请人： Rajasekhar Venigalla , James W. Hannah , Timothy M. McCormack , Robert M. Merkling, Jr.
发明人： Rajasekhar Venigalla , James W. Hannah , Timothy M. McCormack , Robert M. Merkling, Jr.
IPC分类号： B24D3/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0–5.0 wt % and silica particles having a concentration of 0.1–5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150–250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.
摘要翻译：通过向二氧化铈基CMP浆料中添加二氧化硅，抛光过程比无二氧化硅快得多，从而消除抛光过程中的死区，并消除由于操作条件下死区时间变化引起的过程不稳定性。用于在基材上进行图案化氧化物（例如STI，PMD，ILD）的化学机械抛光（CMP）的浆料包括：浓度为1.0-5.0重量％的二氧化铈颗粒和浓度为0.1-5.0重量％的二氧化硅颗粒％。二氧化铈浓度与二氧化硅浓度（二氧化铈：二氧化硅）的比率为约10:1至约1:1重量比。二氧化铈粒子的粒径为150〜250nm，二氧化硅粒子的粒径大于100nm。二氧化硅可以是热解或胶体的。浆液的pH值约为9.0。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式