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1. 发明授权

US07071503B2 Semiconductor structure with a switch element and an edge element 有权
标题翻译：具有开关元件和边缘元件的半导体结构
公开(公告)号：US07071503B2
公开(公告)日：2006-07-04
申请号：US10950027
申请日：2004-09-24
申请人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schörner
发明人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schörner
IPC分类号： H01L29/80
CPC分类号： H01L29/0619 , H01L29/8083
摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要翻译：用于控制和切换电流的半导体结构具有开关元件和边缘元件。开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上边缘区域。

2. 发明申请

US20050062112A1 Semiconductor structure with a switch element and an edge element 有权
标题翻译：具有开关元件和边缘元件的半导体结构
公开(公告)号：US20050062112A1
公开(公告)日：2005-03-24
申请号：US10950027
申请日：2004-09-24
申请人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schorner
发明人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schorner
IPC分类号： H01L21/337 , H01L21/8232 , H01L27/06 , H01L27/095 , H01L29/06 , H01L29/808 , H01L29/76
CPC分类号： H01L29/0619 , H01L29/8083
摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要翻译：用于控制和切换电流的半导体结构具有开关元件和边缘元件。开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上边缘区域。

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