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1. 发明授权

US6019656A Method of fabricating a field emission device by using carbon nano-tubes 失效
标题翻译：使用碳纳米管制造场致发射器件的方法
公开(公告)号：US6019656A
公开(公告)日：2000-02-01
申请号：US145327
申请日：1998-09-01
申请人： Kang Ho Park , Wan Soo Yun , Jeong Sook Ha
发明人： Kang Ho Park , Wan Soo Yun , Jeong Sook Ha
IPC分类号： H01J9/02
CPC分类号： B82Y10/00 , H01J9/025 , Y10S977/842
摘要： This invention relates to a fabrication method of field emission device by using a carbon nano-tubes and, more particularly, to a fabrication method of field emission device by using the carbon nano-tubes, gathering much attention as a new material, as a field emission tips which have thin and stiff edges so that a threshold voltage required for emitting electron of the field emission device is to be lowered drastically. This invention provides a fabrication method of the field emission device using a thermally and chemically stable carbon nano-tubes, which have very stiff and nano-meter-thick edges, as a field emission tips so that the field emission device using the carbon nano-tubes as the tips, which have an excellent electron beam coherency, can emit electrons at a very low voltage and very stable during a long period.
摘要翻译：本发明涉及一种使用碳纳米管的场发射装置的制造方法，更具体地说，涉及使用碳纳米管的场致发射装置的制造方法，作为现场作为新材料而备受关注具有薄且硬边缘的发射尖端，使得发射场致发射装置的电子所需的阈值电压显着降低。本发明提供了使用具有非常硬且纳米厚的边缘的热和化学稳定的碳纳米管作为场发射尖端的场发射器件的制造方法，使得使用碳纳米管的场致发射器件，作为具有优异的电子束相干性的尖端的管可以在非常低的电压下发射电子并且在长时间段内非常稳定。

2. 发明授权

US6037243A Method for manufacturing silicon nanometer structure using silicon nitride film 失效
标题翻译：使用氮化硅膜制造硅纳米结构的方法
公开(公告)号：US6037243A
公开(公告)日：2000-03-14
申请号：US138114
申请日：1998-08-21
申请人： Jeong Sook Ha , Kang Ho Park
发明人： Jeong Sook Ha , Kang Ho Park
IPC分类号： H01L21/033 , H01L21/308 , H01L21/425
CPC分类号： H01L21/3083 , Y10S438/947
摘要： This invention relates to a method for manufacturing silicon nitride films on a silicon substrate through chemical reaction of a surface, and then manufacturing a silicon nanometer structure using the silicon nitride films under ultra high vacuum condition. A method for manufacturing silicon nano structures using silicon nitride film, includes the following steps: performing a cleaning process of the silicon surface and implanting nitrogen ions having low energy into the silicon substrate; performing first heat treatment of the silicon substrate having ions implanted therin, and cooling the silicon substrate to room temperature to form monolayer thick silicon nitride islands; implanting oxygen gas on the silicon surface on which silicon nitride islands are used as masks while maintaining the surface of the silicon substrate at a temperature of 750 to 800.degree. C. and forming silicon nano pillars by etching silicon portions selectively; and removing the silicon nitride islands by implanting reactive ions having energy of 100 to 200 eV on the surface of silicon nano pillars and performing second heat treatment at the temperature of 800 to 900.degree. C.
摘要翻译：本发明涉及通过表面的化学反应在硅衬底上制造氮化硅膜的方法，然后在超高真空条件下制造使用氮化硅膜的硅纳米结构。一种使用氮化硅膜制造硅纳米结构的方法，包括以下步骤：对硅表面进行清洗处理，并将低能量氮离子注入硅衬底; 对具有离子注入的硅衬底进行第一热处理，并将硅衬底冷却至室温以形成单层厚的氮化硅岛; 在将硅衬底的表面保持在750-800℃的温度下，在其上使用氮化硅岛的硅表面上注入氧气，并通过选择性地蚀刻硅部分形成硅纳米柱; 并且通过在硅纳米柱的表面上注入具有100至200eV的能量的活性离子并在800-900℃的温度下进行第二次热处理来除去氮化硅岛。

3. 发明授权

US5942790A Charge effect transistor and a method for manufacturing the same 有权
标题翻译：电荷效应晶体管及其制造方法
公开(公告)号：US5942790A
公开(公告)日：1999-08-24
申请号：US136612
申请日：1998-08-20
申请人： Kang Ho Park , Jeong Sook Ha
发明人： Kang Ho Park , Jeong Sook Ha
IPC分类号： H01L29/78 , H01L21/32 , H01L29/76 , H01L29/772 , H01L45/00 , H01L29/47
CPC分类号： H01L29/7606 , H01L21/32 , H01L29/772 , H01L45/00 , Y10S257/902
摘要： A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-metal dot-metal (MIMIM), metal-insulator film-metal dot-semiconductor (MIMS), or semiconductor-metal dot-semiconductor (SMS) is formed, using junction of electrodes operating as a source and a drain having a metal dot of nm therebetween, and the current flow between source and drain is controlled by controlling tunneling and Schottky barrier formed between the source and the metal dot using the method of controlling electrical potential of metal dot through charging effect of gate electrode isolated by a thick insulator.
摘要翻译：提供了新的概念晶体管和制造方法，其增加了使用常规MOS器件的半导体器件的集成。本发明提供了一种晶体管，其中形成金属 - 绝缘体薄膜 - 金属点金属（MIMIM），金属 - 绝缘体 - 金属点半导体（MIMS）或半导体 - 金属点半导体（SMS）的结构，使用作为源极的电极和具有其间的金属点的漏极的结，并且通过使用控制电位的方法控制在源极和金属点之间形成的隧道和肖特基势垒来控制源极和漏极之间的电流。的金属点通过由绝缘体隔离的栅电极的充电效应。

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