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1. 发明授权

US08009713B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US08009713B2
公开(公告)日：2011-08-30
申请号：US12535463
申请日：2009-08-04
申请人： Kan Takada , Manabu Matsuda , Takeshi Matsumoto
发明人： Kan Takada , Manabu Matsuda , Takeshi Matsumoto
IPC分类号： H01S5/00 , H01S3/08 , H01L21/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/1231 , H01S5/22 , H01S5/32366 , H01S5/3412
摘要： A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.
摘要翻译：半导体激光器包括有源层，在有源层上形成的第一GaAs层，第一GaAs层包括周期性排列的多个凹部，每个凹部包括（100）晶体表面的底面和斜面包括至少部分的（111）A晶体表面，所述凹部被设置成彼此接触或者在每个相邻的凹部之间具有最小间隙，所述底表面的宽度大于所述最小间隙，形成在凹部上的InGaP层和在凹部上形成在InGaAs层上的第二GaAs层。

2. 发明申请

US20100040100A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20100040100A1
公开(公告)日：2010-02-18
申请号：US12535463
申请日：2009-08-04
申请人： Kan TAKADA , Manabu Matsuda , Takeshi Matsumoto
发明人： Kan TAKADA , Manabu Matsuda , Takeshi Matsumoto
IPC分类号： H01S5/026 , H01L21/02
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/1231 , H01S5/22 , H01S5/32366 , H01S5/3412
摘要： A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.
摘要翻译：半导体激光器包括有源层，在有源层上形成的第一GaAs层，第一GaAs层包括周期性排列的多个凹部，每个凹部包括（100）晶体表面的底面和斜面包括至少部分的（111）A晶体表面，所述凹部被设置成彼此接触或者在每个相邻的凹部之间具有最小间隙，所述底表面的宽度大于所述最小间隙，形成在凹部上的InGaP层和在凹部上形成在InGaAs层上的第二GaAs层。

3. 发明申请

US20080013579A1 Buried-heterostructure semiconductor laser 审中-公开
标题翻译：掩埋异质结半导体激光器
公开(公告)号：US20080013579A1
公开(公告)日：2008-01-17
申请号：US11365821
申请日：2006-03-02
申请人： Manabu Matsuda , Tsuyoshi Yamamoto , Kan Takada
发明人： Manabu Matsuda , Tsuyoshi Yamamoto , Kan Takada
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2206 , H01S5/2218 , H01S5/2222 , H01S5/2224 , H01S5/3211 , H01S5/3407 , H01S5/34306 , H01S5/34366
摘要： A 1.3-μm wavelength band buried-heterostructure semiconductor laser includes a semiconductor substrate, a multiple quantum well active layer including quantum well layers and barrier layers, a buried layer in contact with side faces of the multiple quantum well active layer, wherein the barrier layers are made from AlGaInAsP or AlGaInAs, and an Al composition of the barrier layers is 0.275 or less.
摘要翻译： 1.3μm波长带掩埋异质结半导体激光器包括半导体衬底，包括量子阱层和阻挡层的多量子阱活性层，与多量子阱有源层的侧面接触的掩埋层，其中阻挡层由AlGaInAsP或AlGaInAs制成，并且阻挡层的Al组成为0.275以下。

4. 发明申请

US20090052487A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20090052487A1
公开(公告)日：2009-02-26
申请号：US12234161
申请日：2008-09-19
申请人： Tsuyoshi Yamamoto , Manabu Matsuda , Mitsuru Ekawa , Kan Takada , Shigekazu Okumura
发明人： Tsuyoshi Yamamoto , Manabu Matsuda , Mitsuru Ekawa , Kan Takada , Shigekazu Okumura
IPC分类号： H01S5/323
CPC分类号： H01S5/227
摘要： An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.
摘要翻译：一种光学半导体器件，包括有源层，形成在有源层上方并由含有Al的半导体材料制成的第一半导体层，形成在第一半导体层上方的第二半导体层，并由不含任何一种 Al和P，并且其带隙大于有源层的带隙;以及第三半导体层，其形成在第二半导体层上方并由不含Al但包含P的半导体材料制成。第二半导体层形成为第一半导体层和第三半导体层彼此不接触。

5. 发明申请

US20080291952A1 OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光学半导体器件
公开(公告)号：US20080291952A1
公开(公告)日：2008-11-27
申请号：US12125220
申请日：2008-05-22
申请人： Tsuyoshi Yamamoto , Manabu Matsuda , Kan Takada
发明人： Tsuyoshi Yamamoto , Manabu Matsuda , Kan Takada
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/028 , H01S5/1203 , H01S5/124 , H01S5/3403 , H01S5/34306
摘要： An optical semiconductor device with a semiconductor laser formed over a semiconductor substrate, and a modulator formed over the semiconductor substrate and continuously arranged with the semiconductor laser, wherein the semiconductor laser includes a first region having a diffraction grating with a phase shift, a second region arranged between the first region and the modulator, and in which the diffraction grating is not formed, and a common active layer formed over the first region and the second region, a first electrode injecting a current into the common active layer.
摘要翻译：一种形成在半导体衬底上的半导体激光器的光学半导体器件，以及形成在该半导体衬底上且与该半导体激光器连续布置的调制器，其中半导体激光器包括具有相移的衍射光栅的第一区域，布置在第一区域和调制器之间，并且其中没有形成衍射光栅，以及在第一区域和第二区域上形成的公共有源层，第一电极将电流注入到公共有源层中。

6. 发明授权

US07924896B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US07924896B2
公开(公告)日：2011-04-12
申请号：US12234161
申请日：2008-09-19
申请人： Tsuyoshi Yamamoto , Manabu Matsuda , Mitsuru Ekawa , Kan Takada , Shigekazu Okumura
发明人： Tsuyoshi Yamamoto , Manabu Matsuda , Mitsuru Ekawa , Kan Takada , Shigekazu Okumura
IPC分类号： H01S3/04
CPC分类号： H01S5/227
摘要： An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.
摘要翻译：一种光学半导体器件，包括有源层，形成在有源层上方并由含有Al的半导体材料制成的第一半导体层，形成在第一半导体层上方的第二半导体层，并由不含任何一种 Al和P，并且其带隙大于有源层的带隙;以及第三半导体层，其形成在第二半导体层上方并由不含Al但包含P的半导体材料制成。第二半导体层形成为第一半导体层和第三半导体层彼此不接触。

7. 发明授权

US08109584B2 Liquid ejection head, liquid ejection apparatus, and manufacturing method of liquid ejection head 失效
标题翻译：液体喷射头，液体喷射装置和液体喷射头的制造方法
公开(公告)号：US08109584B2
公开(公告)日：2012-02-07
申请号：US12263208
申请日：2008-10-31
申请人： Takeo Eguchi , Shogo Ono , Kazuyasu Takenaka , Atsushi Nakamura , Yuichiro Ikemoto , Shigeyoshi Hirashima , Atsushi Nakayama , Shota Nishi , Yuji Yakura , Shigeyoshi Fujiki , Manabu Matsuda
发明人： Takeo Eguchi , Shogo Ono , Kazuyasu Takenaka , Atsushi Nakamura , Yuichiro Ikemoto , Shigeyoshi Hirashima , Atsushi Nakayama , Shota Nishi , Yuji Yakura , Shigeyoshi Fujiki , Manabu Matsuda
IPC分类号： B41J2/195
CPC分类号： B41J2/14024 , B41J2/1603 , B41J2/1623 , B41J29/02
摘要： A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet.
摘要翻译：液体喷射头包括布置在半导体衬底上的能量产生元件，沉积在半导体衬底上用于在能量产生元件周围形成液体室的阻挡层和粘合在阻挡层上的喷嘴片，并且具有形成在与能量产生元件相对的位置处的喷嘴，其中液体喷射头将由液体容纳在液体室中的液体从喷嘴喷出，作为液体由能量产生元件和阻挡层设置有多个凹陷每个具有独立的轮廓，布置在与阻挡层的边界分离的范围内，粘附在喷嘴片上的粘合剂区域上。

8. 发明申请

US20090178876A1 Controlling apparatus and vehicle provided therewith 审中-公开
标题翻译：控制装置和车辆
公开(公告)号：US20090178876A1
公开(公告)日：2009-07-16
申请号：US11918653
申请日：2006-04-24
申请人： Nobuaki Miki , Munehisa Horiguchi , Manabu Matsuda , Seiichi Takeda
发明人： Nobuaki Miki , Munehisa Horiguchi , Manabu Matsuda , Seiichi Takeda
IPC分类号： B62D9/00 , B62D6/00 , G01C21/00
CPC分类号： B62D7/1509 , B62D7/142 , B62D9/00
摘要： A control device capable of moving a vehicle in a direction with an angle larger than at least the maximum steering angle of wheels. When the wheels (2) are brought into a parallel movement arrangement as shown in FIG. 3(a) and rotatingly driven according to the depressed amount of an accelerator pedal (53), the wheels (2) are slippingly moved on a road surface. Thus, while the vehicle forward component of a drive force generated by the right and left front wheels (2FR) and (2FL) and the vehicle rearward component of a drive force generated by the right and left rear wheels (2RR) and (2RL) balance each other out, the vehicle rightward component of a drive force generated by the right and left front wheels (2FR) and (2FL) and the vehicle rightward component of a drive force generated by the right and left rear wheels (2RR) and (2RL) act as a drive force for moving the vehicle (1) rightward. As a result, the vehicle (1) can be moved, in parallel, in the right side direction of the vehicle.
摘要翻译：能够使车辆沿至少大于车轮的最大转向角度的角度的方向移动的控制装置。当轮（2）进入如图1所示的平行移动装置时，如图3（a）所示，并且根据加速器踏板（53）的下压量旋转地驱动，车轮（2）在路面上滑动。因此，在左右后轮（2RR）和（2RL）所产生的驱动力的左右前轮（2FR）和（2FL）所产生的驱动力的车辆前方分量和车辆后方分量中，由右，左前轮（2FR）和（2FL）产生的驱动力的车辆右侧分量和由左右后轮（2RR）和（2RR）产生的驱动力的车辆向右分量， 2RL）作为用于向右移动车辆（1）的驱动力。结果，车辆（1）能够平行地在车辆的右侧方向上移动。

9. 发明申请

US20080199131A1 Optical device having diffraction gratings coupling guided wave, and its manufacture method 有权
$Optical device having diffraction gratings coupling guided wave, and its manufacture method$
标题翻译：具有耦合导波的衍射光栅的光学器件及其制造方法
公开(公告)号：US20080199131A1
公开(公告)日：2008-08-21
申请号：US12068271
申请日：2008-02-05
申请人： Manabu Matsuda
发明人： Manabu Matsuda
IPC分类号： G02B6/34
CPC分类号： G02B6/124 , B82Y20/00 , H01S5/0655 , H01S5/12 , H01S5/1215 , H01S5/1237 , H01S5/125 , H01S5/22 , H01S5/3412
摘要： An optical waveguide structure formed over a substrate defines an optical waveguide for guiding light along a direction parallel to the substrate surfaces, and biasing a light intensity distribution of transverse modes of guided wave toward a first side of the optical waveguide path. A main diffraction grating is disposed at least on a second side opposite to the first side, and coupled with the guided wave propagating along the optical waveguide. A subsidiary diffraction grating is disposed on the first side, and diffracts the guided wave coupled with the main diffraction grating and propagating along the optical waveguide, to a direction different from an extending direction of the optical waveguide.
摘要翻译：形成在衬底上的光波导结构限定了用于沿平行于衬底表面的方向引导光的光波导，并且将波导的横向模式的光强度分布偏置到光波导路径的第一侧。主衍射光栅至少设置在与第一侧相对的第二侧上，并与沿着光波导传播的导波耦合。辅助衍射光栅设置在第一侧上，衍射与主衍射光栅耦合的导波并沿着光波导传播到与光波导的延伸方向不同的方向。

10. 发明授权

US08210641B2 Liquid ejection head, liquid ejection apparatus, and manufacturing method of liquid ejection head 失效
公开(公告)号：US08210641B2
公开(公告)日：2012-07-03
申请号：US12264772
申请日：2008-11-04
申请人： Takeo Eguchi , Shogo Ono , Kazuyasu Takenaka , Atsushi Nakamura , Yuichiro Ikemoto , Shigeyoshi Hirashima , Atsushi Nakayama , Shota Nishi , Yuji Yakura , Shigeyoshi Fujiki , Manabu Matsuda
发明人： Takeo Eguchi , Shogo Ono , Kazuyasu Takenaka , Atsushi Nakamura , Yuichiro Ikemoto , Shigeyoshi Hirashima , Atsushi Nakayama , Shota Nishi , Yuji Yakura , Shigeyoshi Fujiki , Manabu Matsuda
IPC分类号： B41J2/165
CPC分类号： B41J2/14024 , B41J2/1603 , B41J2/1623 , B41J29/02
摘要： A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet.

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