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1. 发明申请

US20050066897A1 System, method and aperture for oblique deposition 审中-公开
标题翻译：倾斜沉积的系统，方法和孔径
公开(公告)号：US20050066897A1
公开(公告)日：2005-03-31
申请号：US10673795
申请日：2003-09-29
申请人： Kalman Pelhos , Timothy Klemmer , Michael Seigler
发明人： Kalman Pelhos , Timothy Klemmer , Michael Seigler
IPC分类号： C23C14/04 , C23C14/22 , C23C16/00
CPC分类号： C23C14/225 , C23C14/042 , C23C14/044
摘要： A deposition system including a shadow mask with one or more apertures, and a method are described for oblique deposition of tilted thin films with azimuthal symmetry. The deposition system is used with physical vapor deposition processes to provide improved control of the angle of incidents of the flux combined with rotation of the substrate to create titled thin films with improved properties compared to conventional oblique deposition techniques.
摘要翻译：描述了包括具有一个或多个孔的荫罩的沉积系统，以及用于倾斜沉积具有方位角对称性的倾斜薄膜的方法。沉积系统与物理气相沉积工艺一起使用，以提供与基板旋转相结合的焊剂事件角度的改进控制，以产生与常规斜沉积技术相比具有改进性能的标题薄膜。

2. 发明授权

US07593278B2 Memory element with thermoelectric pulse 有权
标题翻译：具有热电脉冲的存储元件
公开(公告)号：US07593278B2
公开(公告)日：2009-09-22
申请号：US11842633
申请日：2007-08-21
申请人： Yufeng Hu , Michael Seigler , Kalman Pelhos
发明人： Yufeng Hu , Michael Seigler , Kalman Pelhos
IPC分类号： G11C7/04
CPC分类号： G11C11/16 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/004 , G11C13/0069 , G11C2013/008 , G11C2013/0092
摘要： A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current pulse generates a thermoelectric heat flow pulse between the thermoelectric device and the memory cell.
摘要翻译：存储元件包括可寻址存储单元。热电装置耦合到存储器单元。电导体向热电装置提供电流脉冲。电流脉冲在热电装置和存储单元之间产生热电热流脉冲。

3. 发明申请

US20090052222A1 MEMORY ELEMENT WITH THERMOELECTRIC PULSE 有权
标题翻译：具有热电脉冲的记忆元件
公开(公告)号：US20090052222A1
公开(公告)日：2009-02-26
申请号：US11842633
申请日：2007-08-21
申请人： Yufeng Hu , Michael Seigler , Kalman Pelhos
发明人： Yufeng Hu , Michael Seigler , Kalman Pelhos
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/004 , G11C13/0069 , G11C2013/008 , G11C2013/0092
摘要： A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current pulse generates a thermoelectric heat flow pulse between the thermoelectric device and the memory cell.
摘要翻译：存储元件包括可寻址存储单元。热电装置耦合到存储器单元。电导体向热电装置提供电流脉冲。电流脉冲在热电装置和存储单元之间产生热电热流脉冲。

4. 发明申请

US20130010387A1 POLE FOR MAGNETIC RECORDING 有权
标题翻译：磁记录
公开(公告)号：US20130010387A1
公开(公告)日：2013-01-10
申请号：US13602915
申请日：2012-09-04
申请人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
发明人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , C25D5/10 , C25D5/14 , G11B5/1278 , G11B5/3116 , Y10T29/49021
摘要： A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross-sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.
摘要翻译：描述了形成具有梯形截面的磁性写入极的方法。该方法包括首先在基底上形成磁性种子层，然后在种子层上沉积可去除的材料层，然后在可移除材料层上形成抗蚀剂层。然后在抗蚀剂中形成沟槽，并且加热抗蚀剂以使沟槽的横截面轮廓呈现梯形。然后将抗蚀剂用另一抗蚀剂层封盖，并进一步加热，使梯形沟槽的宽度变窄。然后去除沟槽底部的覆盖层和可移除材料层，并通过电镀填充磁性材料的沟槽。最后去除沟槽外部的抗蚀剂和籽晶层以形成具有梯形横截面的写入极。

5. 发明申请

US20050117263A1 Magnetic read sensor with stripe width and stripe height control 失效
标题翻译：具有条纹宽度和条纹高度控制的磁性读取传感器
公开(公告)号：US20050117263A1
公开(公告)日：2005-06-02
申请号：US10725882
申请日：2003-12-01
申请人： Michael Seigler
发明人： Michael Seigler
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/3903
摘要： The present invention includes a magnetic sensing structure having a stripe height and a stripe width defining an area for a current flowing therethrough, and at least one electrode positioned adjacent an edge of the magnetic sensing structure for adjustably controlling the stripe width and/or stripe height, and therefore the area (SW×SH), of the magnetic sensing structure through which the current can flow.
摘要翻译：本发明包括具有条纹高度和限定用于流过其中的电流的区域的条带宽度的磁感测结构，以及邻近磁感测结构的边缘定位的至少一个电极，用于可调节地控制条带宽度和/或条纹高度，因此电流可以流过的磁感应结构的面积（SWxSH）。

6. 发明申请

US20070195452A1 Magnetic field sensor based on the extraordinary hall effect 有权
标题翻译：基于非凡的霍尔效应的磁场传感器
公开(公告)号：US20070195452A1
公开(公告)日：2007-08-23
申请号：US11360243
申请日：2006-02-23
申请人： Mark Covington , Thomas Ambrose , Michael Seigler , Hua Zhou
发明人： Mark Covington , Thomas Ambrose , Michael Seigler , Hua Zhou
IPC分类号： G11B5/37
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/07 , H01F10/3218 , H01F10/324 , H01F10/3286 , H01L43/06
摘要： A magnetic field sensor includes a metallic bar coupled to a substrate. Current leads are adapted to provide current to the ferromagnetic bar. Voltage leads are coupled to the ferromagnetic bar to sense an induced Hall voltage therein.
摘要翻译：磁场传感器包括耦合到衬底的金属棒。电流引线适于向铁磁条提供电流。电压引线耦合到铁磁条以感测其中的感应霍尔电压。

7. 发明申请

US20050289577A1 Data writing with plasmon resonator 有权
标题翻译：用等离子体共振器进行数据写入
公开(公告)号：US20050289577A1
公开(公告)日：2005-12-29
申请号：US10879447
申请日：2004-06-29
申请人： Michael Seigler , Thomas Clinton , Mark Covington , Christophe Mihalcea
发明人： Michael Seigler , Thomas Clinton , Mark Covington , Christophe Mihalcea
IPC分类号： G11B5/00 , G11B5/012 , G11B5/127 , G11B11/00 , G11B17/00
CPC分类号： B82Y10/00 , G11B5/127 , G11B7/1387 , G11B11/10534 , G11B11/10554 , G11B2005/0005 , G11B2005/0021
摘要： A data writing system includes an array of cells for storing data and a write transducer that moves over a selected cell in the array of cells. The write transducer includes a writer producing a write magnetic field that intersects the selected cell. The write transducer also includes a plasmon resonator that is adjacent the writer. The plasmon resonator is shaped to receive lower power density radiation and to provide plasmon radiation at a higher power density to an optical spot intersecting with the selected cell. The plasmon radiation heats the selected cell above a write temperature.
摘要翻译：数据写入系统包括用于存储数据的单元阵列和在单元阵列中的选定单元上移动的写换能器。写入传感器包括写入器，其产生与所选择的单元相交的写入磁场。写入传感器还包括与写入器相邻的等离子体激元谐振器。等离子体激元谐振器被成形为接收较低的功率密度辐射并且以更高的功率密度提供与所选择的单元相交的光点的等离子体激元辐射。等离子体激元辐射将选定的电池加热到写入温度以上。

8. 发明授权

US08259411B2 Fabrication of trapezoidal pole for magnetic recording 有权
标题翻译：用于磁记录的梯形极的制造
公开(公告)号：US08259411B2
公开(公告)日：2012-09-04
申请号：US12116798
申请日：2008-05-07
申请人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
发明人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , C25D5/10 , C25D5/14 , G11B5/1278 , G11B5/3116 , Y10T29/49021
摘要： A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross-sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.
摘要翻译：描述了形成具有梯形截面的磁性写入极的方法。该方法包括首先在基底上形成磁性种子层，然后在种子层上沉积可去除的材料层，然后在可移除材料层上形成抗蚀剂层。然后在抗蚀剂中形成沟槽，并且加热抗蚀剂以使沟槽的横截面轮廓呈现梯形。然后将抗蚀剂用另一抗蚀剂层封盖，并进一步加热，使梯形沟槽的宽度变窄。然后去除沟槽底部的覆盖层和可移除材料层，并通过电镀填充磁性材料的沟槽。最后去除沟槽外部的抗蚀剂和籽晶层以形成具有梯形横截面的写入极。

9. 发明申请

US20080084549A1 HIGH REFRACTIVE INDEX MEDIA FOR IMMERSION LITHOGRAPHY AND METHOD OF IMMERSION LITHOGRAPHY USING SAME 审中-公开
标题翻译：高折射率折射率介质及其相似方法
公开(公告)号：US20080084549A1
公开(公告)日：2008-04-10
申请号：US11869059
申请日：2007-10-09
申请人： Robert Rottmayer , Michael Seigler
发明人： Robert Rottmayer , Michael Seigler
IPC分类号： G03B27/42 , G03C1/00
CPC分类号： G03F7/2041 , G03F7/70341
摘要： In accordance with the present invention, a colloidal immersion lithography medium is provided. The medium comprises: a) a continuous liquid phase comprising a liquid having an index of refraction of at least 1.0, generally 1.4; and b) a plurality of particles having an average particle size between 1 nanometer and 2 microns and having an index of refraction of at least that of the liquid, substantially homogeneously dispersed in the liquid phase. Also provided are methods of preparing a colloidal immersion lithography medium, immersion lithography systems, and immersion lithography processes.
摘要翻译：根据本发明，提供胶体浸没光刻介质。介质包括：a）连续液相，其包含折射率至少为1.0的液体，通常为1.4; 和b）平均粒径在1纳米和2微米之间并具有至少液体的折射率的多个颗粒，基本均匀地分散在液相中。还提供了制备胶体浸渍光刻介质，浸没式光刻系统和浸没式光刻工艺的方法。

10. 发明授权

US06791805B2 Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons 有权
标题翻译：电流垂直于平面的自旋阀读数器，其大部分自旋电子的散射减小
公开(公告)号：US06791805B2
公开(公告)日：2004-09-14
申请号：US10113079
申请日：2002-04-01
申请人： Olle Gunnar Heinonen , Michael Seigler , Eric W. Singleton
发明人： Olle Gunnar Heinonen , Michael Seigler , Eric W. Singleton
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3903 , G11B2005/3996
摘要： A giant magnetoresistive (GMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode includes a ferromagnetic free layer, at least one synthetic antiferromagnet, at least one nonmagnetic spacer layer, and at least one antiferromagnetic pinning layer. The ferromagnetic free layer has a rotatable magnetic moment. The synthetic antiferromagnet includes a ferromagnetic reference layer having a fixed magnetic moment, a ferromagnetic pinned layer having a fixed magnetic moment, and a coupling layer positioned between the reference layer and the pinned layer, wherein the coupling layer is selected from the group consisting of Cu, Ag and CuAg. The nonmagnetic spacer layer is positioned between the free layer and the synthetic antiferromagnet. The antiferromagnetic pinning layer is positioned adjacent to the synthetic antiferromagnet.
摘要翻译：配置为以电流垂直于平面（CPP）模式操作的巨磁阻（GMR）堆叠包括铁磁自由层，至少一个合成反铁磁体，至少一个非磁性间隔层和至少一个反铁磁钉扎层。铁磁自由层具有可旋转的磁矩。合成反铁磁体包括具有固定磁矩的铁磁参考层，具有固定磁矩的铁磁性固定层和位于参考层和被钉扎层之间的耦合层，其中耦合层选自Cu ，Ag和CuAg。非磁性间隔层位于自由层和合成反铁磁体之间。反铁磁钉扎层位于合成反铁磁体附近。

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