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1. 发明授权

US08236105B2 Apparatus for controlling gas flow in a semiconductor substrate processing chamber 失效
标题翻译：用于控制半导体衬底处理室中的气体流动的装置
公开(公告)号：US08236105B2
公开(公告)日：2012-08-07
申请号：US10821310
申请日：2004-04-08
申请人： Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
发明人： Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , C23C16/4412 , C23C16/45591 , C23C26/00 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.
摘要翻译：提供了一种用于控制半导体衬底处理室中的处理区域和排气口之间的气体流动的装置。该装置包括支撑在半导体处理室内的至少一个限制板，并且至少部分地限定基板支撑基座。限流板适于控制在处理区域和排气口之间流动的至少一种气体的流动。

2. 发明申请

US20050224180A1 Apparatus for controlling gas flow in a semiconductor substrate processing chamber 失效
标题翻译：用于控制半导体衬底处理室中的气体流动的装置
公开(公告)号：US20050224180A1
公开(公告)日：2005-10-13
申请号：US10821310
申请日：2004-04-08
申请人： Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
发明人： Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01L21/67069 , C23C16/4412 , C23C16/45591 , C23C26/00 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.
摘要翻译：提供了一种用于控制半导体衬底处理室中的处理区域和排气口之间的气体流动的装置。该装置包括支撑在半导体处理室内的至少一个限制板，并且至少部分地限定基板支撑基座。限流板适于控制在处理区域和排气口之间流动的至少一种气体的流动。

3. 发明授权

US07955986B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US07955986B2
公开(公告)日：2011-06-07
申请号：US11360944
申请日：2006-02-23
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/40 , C23C16/00 , C23C16/505 , C23C16/52 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

4. 发明授权

US07256134B2 Selective etching of carbon-doped low-k dielectrics 失效
标题翻译：选择性蚀刻碳掺杂低k电介质
公开(公告)号：US07256134B2
公开(公告)日：2007-08-14
申请号：US10632873
申请日：2003-08-01
申请人： Yunsang Kim , Neungho Shin , Heeyeop Chae , Joey Chiu , Yan Ye , Fang Tian , Xiaoye Zhao
发明人： Yunsang Kim , Neungho Shin , Heeyeop Chae , Joey Chiu , Yan Ye , Fang Tian , Xiaoye Zhao
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , Y10S438/963
摘要： The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.
摘要翻译：本发明包括使用等离子体蚀刻室中的气体混合物的等离子体来选择性地蚀刻形成在衬底上的低k电介质材料的方法。气体混合物包括富氟碳氟化合物或氢氟烃气体，含氮气体和一种或多种添加剂气体，例如富氢氢氟烃气体，惰性气体和/或碳 - 氧气体。该方法提供了大于约5:1的光致抗蚀剂掩模蚀刻选择比的低k电介质，大于10:1的低k电介质到阻挡层/衬层蚀刻选择比，以及低k电介质蚀刻速率高于约4000Å/ min。

5. 发明申请

US20080314522A1 APPARATUS AND METHOD TO CONFINE PLASMA AND REDUCE FLOW RESISTANCE IN A PLASMA REACTOR 有权
公开(公告)号：US20080314522A1
公开(公告)日：2008-12-25
申请号：US12201156
申请日：2008-08-29
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, JR.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, JR.
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

6. 发明授权

US07754997B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma 失效
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07754997B2
公开(公告)日：2010-07-13
申请号：US11924086
申请日：2007-10-25
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： B23K9/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

7. 发明授权

US07674353B2 Apparatus to confine plasma and to enhance flow conductance 有权
标题翻译：用于限制等离子体和增强流动电导的装置
公开(公告)号：US07674353B2
公开(公告)日：2010-03-09
申请号：US11531479
申请日：2006-09-13
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施方案一般涉及等离子体反应器。在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。内壁与上外壁和下外壁相对设置。在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

8. 发明授权

US07618516B2 Method and apparatus to confine plasma and to enhance flow conductance 有权
标题翻译：限制等离子体和增强流动电导的方法和装置
公开(公告)号：US07618516B2
公开(公告)日：2009-11-17
申请号：US11381399
申请日：2006-05-03
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中使用的环形环。在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。环形环可以由诸如碳化硅和铝的导电材料制成。

9. 发明授权

US07585384B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor 有权
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07585384B2
公开(公告)日：2009-09-08
申请号：US12201156
申请日：2008-08-29
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： C23C1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

10. 发明申请

US20060172542A1 Method and apparatus to confine plasma and to enhance flow conductance 审中-公开
标题翻译：限制等离子体和增强流动电导的方法和装置
公开(公告)号：US20060172542A1
公开(公告)日：2006-08-03
申请号：US11046135
申请日：2005-01-28
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： H01L21/302 , C23F1/00 , H01L21/461
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中的处理区域内限制等离子体的方法和装置。该装置可以包括环形环，其具有在室壁之间的间隔距离在约0.8英寸至约1.5英寸之间。除了环形等离子体限制环之外，等离子体还可以通过在等离子体处理期间通过降低施加到顶部电极的电压比例的电压来提供约束，并且在衬底支撑件处以负相位提供提供给顶部电极的剩余电压，如果衬底在加工过程中存在的话。可以通过改变衬底支撑件和围绕顶部电极的电介质密封件的阻抗来调节电压比。通过电压比降低顶部电极电压并且在衬底支架处以负相位提供提供给顶部电极的剩余电压减少了被吸引到接地室壁的等离子体的量，从而改善了等离子体约束。这种等离子体约束的方法被称为阻抗限制。通过使用所描述的环形环，阻抗约束方案或两者的组合可以改善等离子体约束。

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