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1. 发明申请

US20070026665A1 METHOD OF FABRICATING A DUAL DAMASCENE INTERCONNECT STRUCTURE 审中-公开
标题翻译：双重DAMASCENE互连结构的制作方法
公开(公告)号：US20070026665A1
公开(公告)日：2007-02-01
申请号：US11535935
申请日：2006-09-27
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/4763 , H01L21/461 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽以及通孔和下面的导电层之间的阻挡层。

2. 发明申请

US20050059234A1 Method of fabricating a dual damascene interconnect structure 审中-公开
标题翻译：制造双镶嵌互连结构的方法
公开(公告)号：US20050059234A1
公开(公告)日：2005-03-17
申请号：US10663304
申请日：2003-09-16
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽，以及通孔和下面的导电层之间的阻挡层。

3. 发明授权

US07754997B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma 失效
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07754997B2
公开(公告)日：2010-07-13
申请号：US11924086
申请日：2007-10-25
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： B23K9/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

4. 发明授权

US07674353B2 Apparatus to confine plasma and to enhance flow conductance 有权
标题翻译：用于限制等离子体和增强流动电导的装置
公开(公告)号：US07674353B2
公开(公告)日：2010-03-09
申请号：US11531479
申请日：2006-09-13
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施方案一般涉及等离子体反应器。在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。内壁与上外壁和下外壁相对设置。在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

5. 发明授权

US07618516B2 Method and apparatus to confine plasma and to enhance flow conductance 有权
标题翻译：限制等离子体和增强流动电导的方法和装置
公开(公告)号：US07618516B2
公开(公告)日：2009-11-17
申请号：US11381399
申请日：2006-05-03
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas A. Buchberger
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中使用的环形环。在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。环形环可以由诸如碳化硅和铝的导电材料制成。

6. 发明授权

US07585384B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor 有权
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07585384B2
公开(公告)日：2009-09-08
申请号：US12201156
申请日：2008-08-29
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： C23C1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

7. 发明申请

US20060172542A1 Method and apparatus to confine plasma and to enhance flow conductance 审中-公开
标题翻译：限制等离子体和增强流动电导的方法和装置
公开(公告)号：US20060172542A1
公开(公告)日：2006-08-03
申请号：US11046135
申请日：2005-01-28
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： H01L21/302 , C23F1/00 , H01L21/461
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中的处理区域内限制等离子体的方法和装置。该装置可以包括环形环，其具有在室壁之间的间隔距离在约0.8英寸至约1.5英寸之间。除了环形等离子体限制环之外，等离子体还可以通过在等离子体处理期间通过降低施加到顶部电极的电压比例的电压来提供约束，并且在衬底支撑件处以负相位提供提供给顶部电极的剩余电压，如果衬底在加工过程中存在的话。可以通过改变衬底支撑件和围绕顶部电极的电介质密封件的阻抗来调节电压比。通过电压比降低顶部电极电压并且在衬底支架处以负相位提供提供给顶部电极的剩余电压减少了被吸引到接地室壁的等离子体的量，从而改善了等离子体约束。这种等离子体约束的方法被称为阻抗限制。通过使用所描述的环形环，阻抗约束方案或两者的组合可以改善等离子体约束。

8. 发明授权

US07972467B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor 失效
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07972467B2
公开(公告)日：2011-07-05
申请号：US10418996
申请日：2003-04-17
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

9. 发明申请

US20080105660A1 APPARATUS AND METHOD TO CONFINE PLASMA AND REDUCE FLOW RESISTANCE IN A PLASMA REACTOR 失效
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US20080105660A1
公开(公告)日：2008-05-08
申请号：US11924086
申请日：2007-10-25
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger
IPC分类号： B23K9/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

10. 发明申请

US20060193102A1 METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
标题翻译：限制等离子体和加强流动导管的方法和装置
公开(公告)号：US20060193102A1
公开(公告)日：2006-08-31
申请号：US11381399
申请日：2006-05-03
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： H01T23/00
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中使用的环形环。在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。环形环可以由诸如碳化硅和铝的导电材料制成。

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