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1. 发明申请

US20190285759A1 DETECTION ELEMENT AND DETECTOR 审中-公开
公开(公告)号：US20190285759A1
公开(公告)日：2019-09-19
申请号：US16123332
申请日：2018-09-06
申请人： Kabushiki Kaisha Toshiba
发明人： Kohei NAKAYAMA , Fumihiko AIGA , Go KAWATA , lsao TAKASU , Yuko NOMURA , Satomi TAGUCHI , Hyangmi JUNG , Atsushi WADA , Rei HASEGAWA
IPC分类号： G01T1/24 , H01L27/30 , H01L51/44
摘要： According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

2. 发明申请

US20190088881A1 PHOTOELECTRIC CONVERSION ELEMENT AND RADIATION DETECTOR 审中-公开
公开(公告)号：US20190088881A1
公开(公告)日：2019-03-21
申请号：US15904870
申请日：2018-02-26
申请人： Kabushiki Kaisha Toshiba
发明人： Satomi TAGUCHI , Fumihiko AIGA , Atsushi WADA , lsao TAKASU , Rei HASEGAWA
IPC分类号： H01L51/00 , H01L27/30 , G01T1/20
摘要： According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an organic semiconductor layer, and a first region. The first conductive layer includes a first metal. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The first region includes the first metal and oxygen and is positioned between the organic semiconductor layer and the first conductive layer.

3. 发明申请

US20160351828A1 COMPOUND, ORGANIC PHOTOELECTRIC CONVERSION DEVICE AND SOLID-STATE IMAGING DEVICE 有权
标题翻译：化合物，有机光电转换装置和固态成像装置
公开(公告)号：US20160351828A1
公开(公告)日：2016-12-01
申请号：US15161565
申请日：2016-05-23
申请人： Kabushiki Kaisha Toshiba
发明人： Atsushi WADA , lsao TAKASU , Honam KWON , Satomi TAGUCHI
IPC分类号： H01L51/00 , C07D235/18 , H01L27/30
CPC分类号： H01L51/0072 , C07D235/18 , H01L51/0052 , H01L51/0058 , H01L51/4253 , Y02E10/549
摘要： A compound of the embodiment includes the structure represented by the following general formula (1). In the general formula (1), R1 to R4 respectively independently represent a hydrogen atom, a linear or branched alkyl group, a fluoroalkyl group, or an aryl group.
摘要翻译：在通式（1）中，R 1〜R 4分别独立地表示氢原子，直链或支链烷基，氟代烷基或芳基。

4. 发明申请

US20210055435A1 RADIATION DETECTOR 有权
公开(公告)号：US20210055435A1
公开(公告)日：2021-02-25
申请号：US16816005
申请日：2020-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Fumihiko AIGA , Atsushi WADA , Kohei NAKAYAMA , Yuko NOMURA , Sara YOSHIO , Rei HASEGAWA , lsao TAKASU
IPC分类号： G01T1/24
摘要： According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

5. 发明申请

US20200313094A1 RADIATION DETECTOR 审中-公开
公开(公告)号：US20200313094A1
公开(公告)日：2020-10-01
申请号：US16566475
申请日：2019-09-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Atsushi WADA , lsao TAKASU , Rei HASEGAWA , Fumihiko AIGA
IPC分类号： H01L51/00
摘要： According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

6. 发明申请

US20160268345A1 SEMICONDUCTOR DEVICE AND IMAGING DEVICE 有权
标题翻译：半导体器件和成像器件
公开(公告)号：US20160268345A1
公开(公告)日：2016-09-15
申请号：US14943221
申请日：2015-11-17
申请人： Kabushiki Kaisha Toshiba
发明人： Takashi MIYAZAKI , Hideyuki FUNAKI , Yoshinori llDA , lsao TAKASU , Yuki NOBUSA
IPC分类号： H01L27/30 , H01L51/44
CPC分类号： H01L27/307 , H01L27/1461 , H01L27/1464 , H01L27/14645 , H01L27/14667 , H01L27/14694 , H01L51/424 , Y02E10/549
摘要： According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.
摘要翻译：根据实施例，半导体器件包括硅衬底，光电转换层，端接层和电极层。在硅衬底中，第一半导体区域和第二半导体区域沿着硅衬底的光入射侧的第一表面交替布置。第一半导体区域掺杂有第一浓度的杂质并且具有p型和n型中的任一种的导电性。第二半导体区掺杂有低于第一浓度的第二浓度的杂质，并具有另一种类型的导电性。光电转换层设置在硅衬底的第一表面侧。端接层设置在硅衬底和光电转换层之间，与第一表面接触，并终止硅衬底的悬挂键。电极层设置在光入射侧。

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