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1. 发明公开

US20240274703A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240274703A1
公开(公告)日：2024-08-15
申请号：US18451218
申请日：2023-08-17
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Yosuke KAJIWARA , Miyoko SHIMADA , Kento MINAMIKAWA , Hiroshi ONO , Daimotsu KATO , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1

2. 发明申请

US20200373422A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200373422A1
公开(公告)日：2020-11-26
申请号：US16799901
申请日：2020-02-25
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Masahiko KURAGUCHI , Yosuke KAJIWARA , Aya SHINDOME , Hiroshi ONO , Daimotsu KATO , Akira MUKAI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/45 , H01L29/423 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.

3. 发明申请

US20160005927A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20160005927A1
公开(公告)日：2016-01-07
申请号：US14693980
申请日：2015-04-23
申请人： Kabushiki Kaisha Toshiba
发明人： Kenjiro UESUGI , Jumpei TAJIMA , Hiroshi ONO , Toshihide ITO , Shigeya KIMURA , Shinya NUNOUE
IPC分类号： H01L33/38 , H01L33/44 , H01L33/62 , H01L33/40 , H01L33/22
CPC分类号： H01L33/382 , H01L33/405 , H01L33/44
摘要： A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.
摘要翻译：半导体发光元件包括金属层，第一导电类型的第一半导体层，发光层，第二导电类型的第二半导体层，第一电极，第二电极和绝缘层。第一半导体层在第一方向与金属层分离。第一半导体层包括第一区域，第二区域和第三区域。发光层具有与第二方向相交的第一侧面。第二半导体层具有与第二方向交叉的第二侧面。第一电极电连接到第一区域和金属层。第二电极包括第一部分和与第一部分连续的第二部分。绝缘层包括第一绝缘部分和第二绝缘部分。

4. 发明申请

US20150357523A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光元件和发光器件
公开(公告)号：US20150357523A1
公开(公告)日：2015-12-10
申请号：US14826296
申请日：2015-08-14
申请人： Kabushiki Kaisha Toshiba
发明人： Jumpei TAJIMA , Shigeya KIMURA , Hiroshi ONO , Naoharu SUGIYAMA , Shinya NUNOUE
IPC分类号： H01L33/38 , H01L33/20
CPC分类号： H01L33/387 , H01L33/0025 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/62 , H01L33/64 , H01L33/642
摘要： A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately. The stacked body is aligned with the first substrate. The stacked body includes first and second semiconductor layers and a light emitting layer. The electrode is electrically connected to the first semiconductor layer. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face.
摘要翻译：半导体发光元件包括第一基板，层叠体，电极和导电层。第一基板具有第一面和第一侧面。第一侧面与第一面相交。第一基板包括交替布置的多个导电部分和多个绝缘部分。层叠体与第一基板对准。层叠体包括第一和第二半导体层和发光层。电极电连接到第一半导体层。导电层电连接到至少一个导电部分和第二半导体层。至少一个绝缘部分设置在最靠近第一侧面的第一侧面和导电层的一部分之间。

5. 发明公开

US20240313100A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240313100A1
公开(公告)日：2024-09-19
申请号：US18361647
申请日：2023-07-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Daimotsu KATO , Yosuke KAJIWARA , Hiroshi ONO , Aya SHINDOME , Ikuo FUJIWARA , Masahiko KURAGUCHI , Tatsuo SHIMIZU
IPC分类号： H01L29/778 , H01L29/20 , H01L29/36
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/36
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1

6. 发明申请

US20220231155A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220231155A1
公开(公告)日：2022-07-21
申请号：US17398546
申请日：2021-08-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yosuke KAJIWARA , Hiroshi ONO , Daimotsu KATO , Akira MUKAI , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, first and second insulating members. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes a first insulating portion. The first insulating portion is between the third and first electrode portions. The second insulating member includes first and second insulating regions. The first insulating region is between the first electrode and the first electrode portion. The second insulating region is between the first insulating region and the first electrode portion.

7. 发明申请

US20210384337A1 SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：US20210384337A1
公开(公告)日：2021-12-09
申请号：US17407851
申请日：2021-08-20
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Daimotsu KATO , Yosuke KAJIWARA , Akira MUKAI , Aya SHINDOME , Hiroshi ONO , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/06 , H01L29/66 , H01L29/423
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

8. 发明申请

US20210066486A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210066486A1
公开(公告)日：2021-03-04
申请号：US16802315
申请日：2020-02-26
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yosuke KAJIWARA , Hiroshi ONO , Jumpei TAJIMA , Toshiki HIKOSAKA , Shinya NUNOUE , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/207 , H01L29/06 , H01L29/36 , H01L29/51 , H01L29/417 , H01L29/423
摘要： According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.

9. 发明申请

US20200328279A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20200328279A1
公开(公告)日：2020-10-15
申请号：US16799953
申请日：2020-02-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Toshiki HIKOSAKA , Hiroshi ONO , Jumpei TAJIMA , Masahiko KURAGUCHI , Shinya NUNOUE
IPC分类号： H01L29/423 , H01L29/739
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

10. 发明申请

US20170221962A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
公开(公告)号：US20170221962A1
公开(公告)日：2017-08-03
申请号：US15500974
申请日：2015-07-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Jumpei TAJIMA , Hiroshi ONO , Toshihide ITO , Kenjiro UESUGI , Shinya NUNOUE
IPC分类号： H01L27/15 , H01L33/62 , H01L33/38 , H01L33/40 , H01L33/08 , H01L33/22
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/62
摘要： According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b, 20b), a first and a second light emitting layers (30a, 30b), a first to a sixth electrodes (e1-e6), and a first inter-element interconnect section (12). The first semiconductor layer (10a) includes a first to a third regions (r1-r3). The second semiconductor layer (20a) is provided between the first region (r1) and the metal layer (40) and between the second region (r2) and the metal layer (40). The third semiconductor layer (10b) includes a fourth to a sixth regions (r4-r6). The fourth semiconductor layer (20b) is provided between the fourth region (r4) and the metal layer (40) and between the fifth region (r5) and the metal layer (40). The first inter-element interconnect section (12) is provided between the second electrode (e2) and the metal layer (40) and between the sixth electrode (e6) and the metal layer (40).

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