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    • 1. 发明申请
    • DEVICE FOR MANUFACTURING SEMICONDUCTOR OR METALLIC OXIDE INGOT
    • 用于制造半导体或金属氧化物的装置
    • WO2013025072A3
    • 2013-05-30
    • PCT/KR2012006540
    • 2012-08-17
    • KOREA RES INST CHEM TECHMOON SANG JINSO WON WOOKPARK DONG SUNKOO MYUNG HOI
    • MOON SANG JINSO WON WOOKPARK DONG SUNKOO MYUNG HOI
    • C30B28/06C30B11/00H01L21/02H01L31/042
    • C30B11/003B29C39/38B29C39/44C30B11/006C30B29/06C30B29/20C30B29/40Y10T117/1092
    • The present invention relates to an ingot manufacturing device for manufacturing a semiconductor or metallic oxide ingot by sequentially performing liquid to solid phase transition for liquid raw materials such that the liquid raw materials have a fixed solidification direction, and more specifically, according to the present invention, an ingot manufacturing device comprises: a crucible in which semiconductor or metallic oxide raw materials are contained; a cooling means which is equipped in the crucible by being spaced apart at certain intervals in a vertical direction, by considering a height direction of said crucible as a vertical direction and considering a direction that is perpendicular to said vertical direction as a horizontal direction; a first heating means which is equipped in the crucible by being spaced apart at certain intervals in a horizontal direction so as to enclose a circumferential surface of said crucible; and an insulation member which is equipped between said crucible and said cooling means in a vertical direction, wherein the position of the insulation member is moved by a moving unit.
    • 本发明涉及一种用于制造半导体或金属氧化物锭的锭制造装置,其通过依次对液体原料进行液相至固相转变,使得液体原料具有固定的凝固方向,更具体地说,涉及根据本发明 一种锭制造装置包括:坩埚,其中容纳有半导体或金属氧化物原料; 通过考虑坩埚的高度方向作为垂直方向并考虑垂直于所述垂直方向的方向作为水平方向,在坩埚中以一定间隔在垂直方向上间隔设置的冷却装置; 第一加热装置,其通过在水平方向上以一定间隔间隔设置在坩埚中,以包围所述坩埚的圆周表面; 以及绝缘部件,其在所述坩埚和所述冷却装置之间沿垂直方向配置,其中所述绝缘部件的位置由移动单元移动。
    • 7. 发明公开
    • METHODS FOR PREPARATION OF HIGH-PURITY POLYSILICON RODS USING A METALLIC CORE MEANS
    • VERFAHRENFÜRDIE HERSTELLUNG VON STANGEN AUS HOCHREINEM POLYSILICIUM MITTELS METALLKERN
    • EP2027303A4
    • 2012-02-29
    • EP07746605
    • 2007-05-21
    • KOREA RES INST CHEM TECH
    • KIM HEE YOUNGYOON KYUNG KOOPARK YONG KIMOON SANG JINCHOI WON CHOON
    • C23C16/24
    • C23C16/4581C01B33/035C23C16/24Y10T428/2913
    • A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.
    • 一种使用金属芯装置制备多晶硅棒的方法,包括:将芯装置安装在用于制备硅棒的沉积反应器的内部空间中,所述芯装置通过在至少一个分离层的表面上形成 金属芯元件,与电极装置连接,通过电极装置供电来加热芯装置,并将反应气体供应到用于硅沉积的内部空间中,从而在表面上形成向外的沉积输出 核心手段。 沉积输出和芯装置可以容易地从通过硅沉积过程获得的硅棒输出分离,并且可以最小化由金属芯元件的杂质引起的沉积输出的污染,从而高纯度的硅可以 准备更经济,便捷。