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1. 发明申请

WO2006057541A1 PHASE CHANGE MEMORY CELL WITH TRANSPARENT CONDUCTING OXIDE AS ELECTRODE CONTACT MATERIAL 审中-公开
标题翻译：具有透明导电氧化硅作为电极接触材料的相变记忆体
公开(公告)号：WO2006057541A1
公开(公告)日：2006-06-01
申请号：PCT/KR2005/004039
申请日：2005-11-29
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
发明人： CHEONG, Byung-ki , JEONG, Jeung-hyun , KANG, Dae-Hwan , LEE, Taek Sung , KIM, In Ho , LEE, Kyeong Seok , KIM, Won Mok , AHN, Dong-Ho , KIM, Ki-Bum
IPC分类号： H01L27/115
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144
摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要翻译：本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性，导热性低，热稳定性好。可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

2. 发明申请

WO2004074173A1 METHOD OF FORMING QUANTUM LAYER AND PATTERNED STRUCTURE BY MULTIPLE DIP-COATING PROCESS 审中-公开
标题翻译：通过多种DIP涂层工艺形成量子层和形态结构的方法
公开(公告)号：WO2004074173A1
公开(公告)日：2004-09-02
申请号：PCT/KR2004/000350
申请日：2004-02-20
申请人： SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION , KIM, Ki-Bum , YOON, Tae-Sik
发明人： KIM, Ki-Bum , YOON, Tae-Sik
IPC分类号： B82B3/00
CPC分类号： B82Y30/00 , H01L21/02
摘要： The present invention relates to a method of adsorbing quantum dots in a colloid solution on a substrate using a multiple dip-coating process to increase the surface area coverage of quantum dots on the substrate to a level of single layer. Further, this invention relates to a method of forming a uniform pattern of quantum dot clusters on a substrate.
摘要翻译：本发明涉及使用多次浸涂法将基板上的胶体溶液中的量子点吸附在基板上的方法，以将基板上量子点的表面积覆盖率提高至单层。此外，本发明涉及在基板上形成量子点簇的均匀图案的方法。

3. 发明申请

WO2009084775A1 RESIST FOR E-BEAM LITHOGRAPHY 审中-公开
标题翻译：电子束光刻电阻
公开(公告)号：WO2009084775A1
公开(公告)日：2009-07-09
申请号：PCT/KR2008/002452
申请日：2008-04-30
申请人： SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION , YOON, Do-Yeung , KIM, Ki-Bum
发明人： YOON, Do-Yeung , KIM, Ki-Bum
IPC分类号： G03F7/004
CPC分类号： G03F7/0757 , G03F7/0758
摘要： A resist for E-beam lithography is provided. To be specific, provided is a negative resist in which two kinds of organic siloxane compounds are copolymerized. The resist for E-beam lithography makes it possible to manufacture a semiconductor device with further improved quality because the resist is highly sensitive to E-beam, easily prepared, and has uniform properties even though it is stored for a long time.
摘要翻译：提供电子束光刻抗蚀剂。具体而言，提供两种有机硅氧烷化合物共聚的负性抗蚀剂。用于电子束光刻的抗蚀剂使得可以制造具有进一步提高的质量的半导体器件，因为抗蚀剂对电子束具有高度敏感性，容易制备，并且即使长期存储也具有均匀的性质。

4. 发明申请

WO2007037658A1 METHOD FOR FABRICATING NANOSTRUCTURE 审中-公开
标题翻译：制作纳米结构的方法
公开(公告)号：WO2007037658A1
公开(公告)日：2007-04-05
申请号：PCT/KR2006/003939
申请日：2006-09-29
申请人： SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION , KIM, Ki-Bum , PARK, Sang-Hyun
发明人： KIM, Ki-Bum , PARK, Sang-Hyun
IPC分类号： B82B3/00
CPC分类号： B81C1/00111
摘要： A method for fabricating a nanostructure includes forming a silicon oxide layer over a substrate, selectively etching the silicon oxide layer to form a trench with gradually sloped sidewalls, forming a conductive layer over the silicon oxide layer with the trench, forming an aluminum layer over the conductive layer, planarizing a surface of the aluminum layer using chemical mechanical polishing (CMP), anodizing the aluminum layer to form an aluminum oxide layer with an array of nanopores, removing the barrier type aluminum oxide layer underneath the nanopores by performing the anodization overly to thereby expose the conductive layer underneath the nanopores, and growing nanowires inside the individual nanopores using the exposed conductive layer.
摘要翻译：制造纳米结构的方法包括在衬底上形成氧化硅层，选择性地蚀刻氧化硅层以形成具有逐渐倾斜的侧壁的沟槽，在沟槽的氧化硅层之上形成导电层，在其上形成铝层导电层，使用化学机械抛光（CMP）对铝层的表面进行平坦化，阳极氧化铝层以形成具有纳米孔阵列的氧化铝层，通过执行阳极氧化过渡去除纳米孔下方的阻挡型氧化铝层从而将导电层暴露在纳米孔下方，并使用暴露的导电层在单个纳米孔内生长纳米线。

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