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    • 7. 发明公开
    • THE METHOD FOR FABRICATING MICRO VERTICAL STRUCTURE
    • 微观垂直结构的制作方法
    • KR20100005908A
    • 2010-01-18
    • KR20080066015
    • 2008-07-08
    • KOREA ELECTRONICS TELECOMMKWANGJU INST SCI & TECH
    • LEE MYUNG LAELEE JONG HYUNYUN SUNG SIKJEONG DAE HUNHWANG GUNNCHOI CHANG AUCKJE CHANG HANAN JAE YONG
    • H01L29/00
    • B81C1/00619B81C1/00626B81C2201/0132B81C2201/0133
    • PURPOSE: A manufacturing method of a micro vertical structure is provided to improve the performance of an MEMS device such as an electrostatic sensor and an optical element by minimizing form defects and footing phenomenon. CONSTITUTION: An insulating layer pattern(220a) and a hollow space are formed in order to prevent footing phenomenon by patterning an insulating layer(220) after forming the insulating layer on a first crystalline silicon substrate. After welding a second crystalline silicon substrate(230) on the dielectric layer pattern, the second crystalline silicon substrate is etched through a deep reactive ion etching method along the crystal plane of the vertical direction to the second crystalline silicon substrate. A micro vertical structure(230a) with a side vertically to the second crystalline silicon substrate is formed by etching the etched side surface of the second crystalline silicon substrate through a crystalline wet etching method.
    • 目的:提供微垂直结构的制造方法,以通过最小化形状缺陷和基础现象来改善诸如静电传感器和光学元件的MEMS装置的性能。 构成:为了防止在第一晶体硅衬底上形成绝缘层之后对绝缘层(220)进行构图,防止基脚现象形成绝缘层图案(220a)和中空空间。 在电介质层图案上焊接第二晶体硅衬底(230)之后,通过深反应离子蚀刻方法沿着与第二晶体硅衬底的垂直方向的晶面蚀刻第二晶体硅衬底。 通过结晶湿蚀刻方法蚀刻第二晶体硅衬底的蚀刻侧表面,形成具有垂直于第二晶体硅衬底的一侧的微立体结构(230a)。