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1. 发明申请

WO2008023329A2 METHOD OF MANUFACTURING A SEMICONDUCTOR SENSOR DEVICE AND SEMICONDUCTOR SENSOR DEVICE 审中-公开
标题翻译：制造半导体传感器装置的方法和半导体传感器装置
公开(公告)号：WO2008023329A2
公开(公告)日：2008-02-28
申请号：PCT/IB2007/053328
申请日：2007-08-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WUNNICKE, Olaf , BAKKERS, Erik, P., A., M. , ROEST, Aarnoud, L.
发明人： WUNNICKE, Olaf , BAKKERS, Erik, P., A., M. , ROEST, Aarnoud, L.
IPC分类号： G01N27/414
CPC分类号： G01N27/127
摘要： The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa- shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first electrically conducting connection region (2) and at a second end to a second electrically conducting connection region (3) while a gas or a liquid comprising a substance to be sensed can flow between the mesa-shaped semiconductor regions (1) and the substance to be sensed can influence the electrical properties of the plurality of the mesa-shaped semiconductor regions (1), wherein at the surface of the semiconductor body (11) the first connection region (2) is formed and connected thereto with the first end the plurality of mesa- shaped semiconductor regions (1) is formed, and subsequently the second connection region (3) is formed connected to the plurality of mesa- shaped semiconductor regions (1) at their second end. According to the invention after formation of the plurality of mesa- shaped semiconductor regions (1) the free space between these regions (1) is filled with a fill material (4) that can be selectively removed with respect to the material of the plurality of mesa- shaped semiconductor regions (1) and of other bordering parts of the semiconductor sensor device (10), subsequently a conducting layer (30) is deposited over the resulting structure from which the second connection region (3) is formed whereinafter the fill material (4) is removed by selective removed by which the space between the plurality of mesa- shaped semiconductor regions (1) is made free again. In this way sensor devices (10) are manufacturing with a method that is easily applied on an industrial scale and results in a high yield.
摘要翻译：本发明涉及一种制造用于感测物质的半导体传感器装置（10）的方法，所述物质包括多个相互平行的台面形半导体区域（1），所述台面形状的半导体区域（1）形成在半导体（11），并且其第一端连接到第一导电连接区域（2）并且在第二端连接到第二导电连接区域（3），同时包括待感测物质的气体或液体可以在台面形状的半导体区域（1）与待检测的物质之间的流动会影响多个台面形状的半导体区域（1）的电特性，其中在半导体本体（11）的表面处，第一连接在形成多个台面形状的半导体区域（1）的状态下，形成多个台区域（2）并与其连接，并且随后将所述第二连接区域（3）形成为与所述多个台面形状半导体区域（1）的第二端。根据本发明，在形成多个台面形半导体区域（1）之后，这些区域（1）之间的自由空间填充有填充材料（4），填充材料（4）可以相对于多个（1）以及半导体传感器装置（10）的其他边界部分，然后在形成第二连接区域（3）的所得结构上沉积导电层（30），之后填充材料（4）通过选择性地移除而移除，由此多个台面型半导体区域（1）之间的空间再次释放。通过这种方式，传感器装置（10）采用易于在工业规模上应用并产生高产量的方法来制造。

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