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1. 发明申请

WO2010070544A1 ELECTRONIC SENSOR FOR NITRIC OXIDE 审中-公开
标题翻译：电子传感器用于氧化氮
公开(公告)号：WO2010070544A1
公开(公告)日：2010-06-24
申请号：PCT/IB2009/055637
申请日：2009-12-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , SETAYESH, Sepas , WILLARD, Nicolaas, P. , DE LEEUW, Dagobert, M.
发明人： SETAYESH, Sepas , WILLARD, Nicolaas, P. , DE LEEUW, Dagobert, M.
IPC分类号： G01N27/414 , G01N27/416 , G01N33/00
CPC分类号： G01N27/414 , G01N33/0037 , Y02A50/245
摘要： Disclosed is a semiconductor device (1) for determining NO concentrations in fluids such as exhaled breath. The device (1) typically comprises a pair of electrodes (18) separated from each other to define a channel region (16) in an organic semiconductor (14), a gate structure (10) for controlling said channel region, and a receptor layer (22) at least partially overlapping said channel region, said receptor layer comprising a porphine or phtalocyanine coordination complex including a group III-XII transition metal ion or a lead (Pb) ion for complexing NO. Such a semiconductor device is capable of sensing NO concentrations in the ppb range.
摘要翻译：公开了一种用于确定诸如呼出气体的流体中的NO浓度的半导体装置（1）。器件（1）通常包括彼此分离的一对电极（18），以在有机半导体（14）中限定沟道区域（16），用于控制所述沟道区域的栅极结构（10）和接收层（22）至少部分地与所述通道区域重叠，所述受体层包含卟吩或酞菁配位络合物，其包含用于络合NO的III-XII过渡金属离子或铅（Pb）离子。这种半导体器件能够感测ppb范围内的NO浓度。

2. 发明申请

WO2007138506A1 ORGANIC FIELD-EFFECT TRANSISTOR FOR SENSING APPLICATIONS 审中-公开
标题翻译：用于传感应用的有机场效应晶体管
公开(公告)号：WO2007138506A1
公开(公告)日：2007-12-06
申请号：PCT/IB2007/051764
申请日：2007-05-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , SETAYESH, Sepas , DE LEEUW, Dagobert, M.
发明人： SETAYESH, Sepas , DE LEEUW, Dagobert, M.
IPC分类号： G01N27/414 , H01L51/05
CPC分类号： G01N27/414 , H01L51/0545
摘要： Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.
摘要翻译：场效应晶体管，包括栅电极层，第一介电层，源电极，漏电极，有机半导体和第二电介质层，其中第一介电层位于栅电极层上，源极，漏电极和有机半导体位于第一电介质层的上方，源极和漏电极与有机半导体接触，其中第二介电层被放置在源电极，漏电极和有机半导体的组装上，其中在场效应晶体管的操作期间，包括栅极电极层和第一介电层的组件的电容低于第二介电层的电容。此外，公开了一种包括这种场效应晶体管的传感器系统和用于检测分子的传感器系统的使用。

3. 发明申请

WO2004068609A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：WO2004068609A1
公开(公告)日：2004-08-12
申请号：PCT/IB2004/050055
申请日：2004-01-27
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , SETAYESH, Sepas , DE LEEUW, Dagobert, M. , BUECHEL, Michael , ANTHOPOULOS, Thomas, D. , NIJSSEN, Wilhelmus, P., M. , MEIJER, Eduard, J.
发明人： SETAYESH, Sepas , DE LEEUW, Dagobert, M. , BUECHEL, Michael , ANTHOPOULOS, Thomas, D. , NIJSSEN, Wilhelmus, P., M. , MEIJER, Eduard, J.
IPC分类号： H01L51/40
CPC分类号： H01L51/0083 , B82Y10/00 , H01L27/283 , H01L51/0038 , H01L51/0039 , H01L51/0046 , H01L51/005 , H01L51/0058 , H01L51/0065 , H01L51/0516 , H01L51/0545 , H01L51/0566
摘要： Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.
摘要翻译：提供了具有显示双极性行为的有机半导体材料的场效应晶体管。此外，能够实现双极行为的有机半导体材料是具有小带隙的材料。

4. 发明申请

WO2004068267A2 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：WO2004068267A2
公开(公告)日：2004-08-12
申请号：PCT/IB2004/050053
申请日：2004-01-26
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DE LEEUW, Dagobert, M. , MEIJER, Eduard, J. , SETAYESH, Sepas
发明人： DE LEEUW, Dagobert, M. , MEIJER, Eduard, J. , SETAYESH, Sepas
IPC分类号： G06F
CPC分类号： H01L51/0083 , B82Y10/00 , H01L27/283 , H01L51/0038 , H01L51/0039 , H01L51/0046 , H01L51/005 , H01L51/0058 , H01L51/0065 , H01L51/0516 , H01L51/0545 , H01L51/0566
摘要： The electronic device comprises an inverter having a first and a second fieldeffect transistor with an active layer comprising a first organic semiconductor material of the first conductivity type and a second organic semiconductor material of the second conductivity type. The active layer can be provided from a solution, for instance in that it is a blend of two materials.
摘要翻译：该电子器件包括具有第一场效应晶体管和第二场效应晶体管的反相器，该反相器具有有源层，该有源层包括第一导电类型的第一有机半导体材料和第二导电类型的第二有机半导体材料。活性层可以由溶液提供，例如它是两种材料的混合物。

5. 发明申请

WO2005031685A2 DISPLAY DEVICE ARRANGEMENT AND CONTAINER 审中-公开
标题翻译：显示设备安装和容器
公开(公告)号：WO2005031685A2
公开(公告)日：2005-04-07
申请号：PCT/IB2004/051846
申请日：2004-09-24
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN RENS, Bas, J., E. , GELINCK, Gerwin, H. , HUITEMA, Hjalmar, E. A. , DE LEEUW, Dagobert, M. , NIJMAN, Aloysius, J.
发明人： VAN RENS, Bas, J., E. , GELINCK, Gerwin, H. , HUITEMA, Hjalmar, E. A. , DE LEEUW, Dagobert, M. , NIJMAN, Aloysius, J.
IPC分类号： G09G
CPC分类号： B65D81/24 , B65D81/2069 , B65D81/266 , H01L51/5237 , H01L51/5259 , H01L2251/5338
摘要： A display device arrangement (1) comprises a display device (10). The display device (10) comprises a component being degradable upon exposure to an environmental factor such as light or moisture. Such a component may for instance be an organic semiconductor or an organic electro-optical material. The display device arrangement (1) further comprises a container (100) for storing the display device (10). The container (100) comprises protective means (120) that are detached from the flexible display device (10) for reducing the exposure of the degradable component to the environmental factor. Consequently, the lifetime of the display device (10) is increased without having to attach protective barriers to the display device (10) itself.
摘要翻译：显示装置装置（1）包括显示装置（10）。显示装置（10）包括当暴露于诸如光或湿气的环境因素时可降解的成分。这种组分可以例如是有机半导体或有机电光材料。显示装置装置（1）还包括用于存储显示装置（10）的容器（100）。容器（100）包括与柔性显示装置（10）分离的保护装置（120），用于减少可降解组分暴露于环境因素。因此，显示装置（10）的寿命增加，而不必对显示装置（10）本身附加保护屏障。

6. 发明申请

WO2005064614A1 NON-VOLATILE FERROELECTRIC THIN FILM DEVICE USING AN ORGANIC AMBIPOLAR SEMICONDUCTOR AND METHOD FOR PROCESSING SUCH A DEVICE 审中-公开
标题翻译：使用有机环形半导体的非挥发性薄膜薄膜器件及其处理方法
公开(公告)号：WO2005064614A1
公开(公告)日：2005-07-14
申请号：PCT/IB2004/052613
申请日：2004-12-01
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GELINCK, Gerwin, H. , MARSMAN, Albert, W. , TOUWSLAGER, Fredericus, J. , DE LEEUW, Dagobert, M.
发明人： GELINCK, Gerwin, H. , MARSMAN, Albert, W. , TOUWSLAGER, Fredericus, J. , DE LEEUW, Dagobert, M.
IPC分类号： G11C11/22
CPC分类号： H01L27/281 , B82Y10/00 , G11C11/22 , H01L21/28291 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with - and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.
摘要翻译：提出了一种非挥发性铁电存储器件，其包括有机铁电聚合物与有机双极半导体的组合。本发明的装置与 - 并充分利用聚合物的优点，即溶液处理，低成本，低温层沉积和与柔性基底的相容性相容。

7. 发明申请

WO2005017868A1 DISPLAY DEVICE WITH FLEXIBLE SUBSTRATE AND SHIFT REGISTER 审中-公开
标题翻译：具有柔性基板和移位寄存器的显示设备
公开(公告)号：WO2005017868A1
公开(公告)日：2005-02-24
申请号：PCT/IB2004/002641
申请日：2004-08-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , CANTATORE, Eugenio , GELINCK, Gerwin, H. , HUITEMA, Hjalmar, E., A. , DE LEEUW, Dagobert, M. , VAN RENS, Bas, J., E.
发明人： CANTATORE, Eugenio , GELINCK, Gerwin, H. , HUITEMA, Hjalmar, E., A. , DE LEEUW, Dagobert, M. , VAN RENS, Bas, J., E.
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2300/08 , G09G2330/04
摘要： A matrix array display device (100) is mounted on a flexible substrate (110) such as a polyimide substrate, and has a plurality of first conductors (120) crossing a plurality of second conductors (130), with a plurality of pixels (140) being located in the vicinity of a crossing between a first conductor (120) and a second conductor (130). The display device (100) includes a flexible shift register (150) and an optional further flexible shift register (160) for addressing the first conductors (120). The flexible shift register (150), which preferably is realized using organic semiconductor materials, occupies a smaller area of the flexible substrate (110) than for instance a bus structure, thus increasing the effective display area of the display device (100).
摘要翻译：矩阵阵列显示装置（100）安装在诸如聚酰亚胺基板的柔性基板（110）上，并且具有与多个第二导体（130）交叉的多个第一导体（120），多个像素（140 ）位于第一导体（120）和第二导体（130）之间的交叉点附近。显示设备（100）包括用于寻址第一导体（120）的灵活移位寄存器（150）和可选的另外灵活的移位寄存器（160）。优选使用有机半导体材料实现的柔性移位寄存器（150）占据柔性基板（110）的比例如总线结构更小的区域，从而增加显示装置（100）的有效显示区域。

8. 发明申请

WO2003079400A2 ELECTRONIC DEVICE, METHOD, MONOMER AND POLYMER 审中-公开
标题翻译：电子设备，方法，单体和聚合物
公开(公告)号：WO2003079400A2
公开(公告)日：2003-09-25
申请号：PCT/IB2003/001062
申请日：2003-03-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , HUISMAN, Bart-Hendrik , DE LEEUW, Dagobert, M. , LUB, Johan
发明人： HUISMAN, Bart-Hendrik , DE LEEUW, Dagobert, M. , LUB, Johan
IPC分类号： H01L
CPC分类号： C08G61/02 , H01L51/0003 , H01L51/0036 , H01L51/0545 , H01L51/5012
摘要： The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.
摘要翻译：本发明的电子设备包括一个或多个有源元件，每个有源元件包括第一和第二电极以及分隔第一和第二电极的有机材料的有源层。有源元件的例子是薄膜晶体管和发光二极管。活性层包含具有共轭单元A和非共轭中间单元B的聚合物材料，该中间单元B将共轭单元A彼此分开，使得没有共轭从第一共轭单元A1延伸到第二共轭单元A2。聚合物材料可以是聚合物网络，交替共聚物或其中共轭单元存在于侧链中的聚合物。该聚合物可以由具有B1-A1-B2结构的单体制备，其中B1和B2中的至少一个包含能够聚合的反应性基团。

9. 发明申请

WO2010122433A2 IMAGING MEASUREMENT SYSTEM WITH A PRINTED ORGANIC PHOTODIODE ARRAY 审中-公开
标题翻译：具有印刷有机光电子阵列的成像测量系统
公开(公告)号：WO2010122433A2
公开(公告)日：2010-10-28
申请号：PCT/IB2010/051105
申请日：2010-03-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , U.S. PHILIPS CORPORATION , LEVENE, Simha , ALTMAN, Ami , WAINER, Naor , DE LEEUW, Dagobert, M. , HASKAL, Eliav
发明人： LEVENE, Simha , ALTMAN, Ami , WAINER, Naor , DE LEEUW, Dagobert, M. , HASKAL, Eliav
IPC分类号： G01T1/20
CPC分类号： G01T1/2985 , G01T1/2018
摘要： An imaging system includes a macro organic photodiode array with rows and columns of printed photodiodes. The array may be bendable for easy manufacture and assembly on a curved support within an imaging system. Two or more layers of photodiodes may be provided for use in a spectral CT imaging system or as slices.
摘要翻译：成像系统包括具有印刷光电二极管的行和列的宏观有机光电二极管阵列。阵列可以是可弯曲的，以便容易地制造和组装在成像系统内的弯曲支撑件上。可以提供两层或多层光电二极管用于光谱CT成像系统或切片。

10. 发明申请

WO2010049871A2 DUAL GATE FIELD-EFFECT TRANSISTOR AND METHOD OF PRODUCING A DUAL GATE FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：双栅场场效应晶体管及其生产双栅场效应晶体管的方法
公开(公告)号：WO2010049871A2
公开(公告)日：2010-05-06
申请号：PCT/IB2009/054717
申请日：2009-10-26
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DE LEEUW, Dagobert, M. , VAN HAL, Paulus, A. , 'T HOOFT, Gert
发明人： DE LEEUW, Dagobert, M. , VAN HAL, Paulus, A. , 'T HOOFT, Gert
IPC分类号： H01L51/05
CPC分类号： H01L51/0554 , H01L51/0068 , H01L51/0562
摘要： The present invention relates to a dual gate field-effect transistor (1) comprising a first and a second dielectric layer (6,7), a first and a second gate electrode (9,11) and an assembly (2) of at least one source electrode (3), at least one drain electrode (4) and at least one organic semiconductor (5), wherein - the source electrode (3) and the drain electrode (4) are in contact with the semiconductor (5), the assembly (2) is located between the first dielectric layer (6) and the second dielectric layer (7), the first dielectric layer (6) is located between the first gate electrode (9) and a first side (8) of the assembly (2), and the second dielectric layer (7) is located between the second gate electrode (11) and a second side (10) of the assembly (2), wherein the organic semiconductor (5) is an organic ambipolar conduction semiconductor (12) which enables at least one electron injection area (18) at the first side (8) and at least one hole injection area (18) at the second side (19) of the assembly (2). The present invention further comprises a corresponding light emission device, a corresponding sensor system and a corresponding memory device comprising at least one field-effect transistor and a method of producing a corresponding dual gate field-effect transistor.
摘要翻译：本发明涉及一种双栅极场效应晶体管（1），其包括第一和第二介电层（6,7），第一和第二栅极电极（9,11）和至少一个组件（2）一个源电极（3），至少一个漏电极（4）和至少一个有机半导体（5），其中源电极（3）和漏电极（4）与半导体（5）接触，组件（2）位于第一介电层（6）和第二电介质层（7）之间，第一介电层（6）位于第一电极（9）和第一介电层（6）的第一侧组件（2），第二介质层（7）位于组件（2）的第二栅电极（11）和第二侧（10）之间，其中有机半导体（5）是有机双极导电半导体（12），其使得能够在第一侧（8）处至少一个电子注入区域（18）和在第二侧（8）处的至少一个空穴注入区域（18）（2）。本发明还包括相应的发光器件，相应的传感器系统和包括至少一个场效应晶体管的对应的存储器件以及产生相应的双栅极场效应晶体管的方法。

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