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    • 3. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • WO2013088352A2
    • 2013-06-20
    • PCT/IB2012/057212
    • 2012-12-12
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH
    • ENGEL, Klaus, JürgenHERRMANN, Christoph
    • H01L27/14605G01T1/24G01T1/241H01L27/1463H01L27/14638H01L27/14659H01L27/14676
    • The present invention relates to radiation detector (2) comprising a radiation sensitive semiconductor element (10) generating electron-hole pairs in response to an irradiation with radiation (3), an anode electrode(20) arranged on a first surface (11) of the semiconductor element (10) facing away from the radiation, said anode electrode (20) being segmented into anode segments (21) representing anode pixels, wherein anode gaps (22) are arranged between said anode segments (21), a cathode electrode (30) arranged on a second surface (12) of the semiconductor element (10) opposite the first surface (11) and facing the radiation (3), said cathode electrode (30) being segmented into first and second cathode segments (31, 32), wherein said first cathode segments (31) are substantially arranged opposite said anode segments (21) and said second cathode segments (32) are substantially arranged opposite said anode gaps (22), and a cathode terminal (41, 42) providing electrical connections to said first cathode segments (31) and said second cathode segments (32) for coupling different electrical potentials to said first and second cathode segments (31, 32). By such an arrangement charge sharing can be effectively reduced.
    • 本发明涉及辐射探测器(2),该辐射探测器包括响应辐射(3)的辐射而产生电子空穴对的辐射敏感半导体元件(10),设置的阳极(20) 在所述半导体元件(10)的远离所述辐射的第一表面(11)上,所述阳极电极(20)被分段为代表阳极像素的阳极段(21),其中阳极间隙(22)被布置在所述阳极段 (21);布置在所述半导体元件(10)的与所述第一表面(11)相对的第二表面(12)上且面向所述辐射(3)的阴极电极(30),所述阴极电极(30) 和第二阴极段(31,32),其中所述第一阴极段(31)基本上与所述阳极段(21)相对布置并且所述第二阴极段(32)基本上与所述阳极间隙(22)相对布置,并且阴极 终端(41,42)提供电气连接 连接到所述第一阴极段(31)和所述第二阴极段(32),用于将不同的电位耦合到所述第一和第二阴极段(31,32)。 通过这样的安排,可以有效地减少电荷共享。