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1. 发明申请

WO2006079979A2 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2006079979A2
公开(公告)日：2006-08-03
申请号：PCT/IB2006/050269
申请日：2006-01-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , AVIZA TECHNOLOGY, LTD. , FURUKAWA, Yukiko , MACNEIL, John
发明人： FURUKAWA, Yukiko , MACNEIL, John
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/31144 , H01L21/3122 , H01L21/3212 , H01L21/76802 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1047
摘要： This invention relates to a method of manufacturing a semiconductor device. In this method, a semiconductor device is provided comprising a substrate (10), the substrate (10) being covered with a low-k precursor layer (20) having a surface (25). After this step, a partial curing step is performed in which a dense layer (30) is formed at or near the surface (25) of a low-k precursor layer (20). This dense layer (30) can act as a protective layer (30). The low-k precursor material (20) is chosen from a group of materials having the property that they are applicable in a non-cured or partially cured state. The main advantage of this method is that no separate protective layer (30) needs to be provided to the low-k precursor layer (20), because the dense layer (30) is formed out of the low-k precursor layer (20) itself. The dense layer (30) therefore has a good adhesion to the low-k precursor layer (20).
摘要翻译：本发明涉及半导体器件的制造方法。在该方法中，提供了一种半导体器件，其包括衬底（10），衬底（10）被具有表面（25）的低k前体层（20）覆盖。在该步骤之后，进行部分固化步骤，其中在低k前体层（20）的表面（25）处或附近形成致密层（30）。该致密层（30）可用作保护层（30）。低k前体材料（20）选自具有它们可应用于非固化或部分固化状态的性质的一组材料。该方法的主要优点在于，由于致密层（30）由低k前体层（20）形成，所以不需要向低k前体层（20）提供单独的保护层（30）本身。因此，致密层（30）对低k前体层（20）具有良好的粘附性。

2. 发明申请

WO2006064416A1 A SEMICONDUCTOR DEVICE HAVING A RECESS WITH NON-POROUS WALLS IN A POROUS DIELECTRIC AND A METHOD OF MANUFACTURING SUCH A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：具有多孔电介质中的非多孔性凹坑的半导体器件和制造这种半导体器件的方法
公开(公告)号：WO2006064416A1
公开(公告)日：2006-06-22
申请号：PCT/IB2005/054101
申请日：2005-12-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , FURUKAWA, Yukiko , MACNEIL, John
发明人： FURUKAWA, Yukiko , MACNEIL, John
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L2221/1047
摘要： This invention relates to a semiconductor device and a method of manufacturing such a device. An embodiment of the semiconductor device (1) according to the invention comprises a substrate (10), a dielectric layer (21) applied to the substrate (10), the dielectric layer (21) having a recess (50), the recess (50) having walls defined by the dielectric layer (21), the recess (50) being filled with a conductor (90), the conductor (90) being embedded by a barrier layer (85) at least on sidewalls of the conductor (90), while the dielectric layer (21) comprises non-porous regions (75) adjacent to the walls of the recess (50) and porous regions (25) away from the recess (50). The conductor (90) is provided with a capping layer (95). It is an important aspect of the invention that the width W of the non- porous regions (75) is smaller than 40 nanometer. The smaller the width of the modified regions the lower the effective k- value. A further important aspect of the invention is that the modified layers 75 are substantially free of silicon oxide like material.
摘要翻译：本发明涉及一种半导体器件及其制造方法。根据本发明的半导体器件（1）的实施例包括衬底（10），施加到衬底（10）的电介质层（21），电介质层（21）具有凹部（50），凹部 50）具有由介电层（21）限定的壁，凹部（50）填充有导体（90），导体（90）至少在导体（90）的侧壁上被阻挡层（85）嵌入），而电介质层（21）包括与凹部（50）的壁相邻的非多孔区域（75）和远离凹部（50）的多孔区域（25）。导体（90）设置有覆盖层（95）。本发明的一个重要方面是，非多孔区域（75）的宽度W小于40纳米。修改区域的宽度越小，有效k值越低。本发明的另一重要方面是改性层75基本上不含氧化硅类材料。

3. 发明公开

EP1872395A2 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：一种制造半导体器件的方法
公开(公告)号：EP1872395A2
公开(公告)日：2008-01-02
申请号：EP06710745.8
申请日：2006-01-25
申请人： Koninklijke Philips Electronics N.V. , Aviza Technology, Ltd.
发明人： FURUKAWA, Yukiko , MACNEIL, John
IPC分类号： H01L21/316
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/31144 , H01L21/3122 , H01L21/3212 , H01L21/76802 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1047
摘要： This invention relates to a method of manufacturing a semiconductor device. In this method, a semiconductor device is provided comprising a substrate (10), the substrate (10) being covered with a low-k precursor layer (20) having a surface (25). After this step, a partial curing step is performed in which a dense layer (30) is formed at or near the surface (25) of a low-k precursor layer (20). This dense layer (30) can act as a protective layer (30). The low-k precursor material (20) is chosen from a group of materials having the property that they are applicable in a non-cured or partially cured state. The main advantage of this method is that no separate protective layer (30) needs to be provided to the low-k precursor layer (20), because the dense layer (30) is formed out of the low-k precursor layer (20) itself. The dense layer (30) therefore has a good adhesion to the low-k precursor layer (20).
摘要翻译：本发明涉及一种制造半导体器件的方法。在该方法中，提供包括衬底（10）的半导体器件，衬底（10）被具有表面（25）的低k前体层（20）覆盖。在该步骤之后，执行部分固化步骤，其中在低k前体层（20）的表面（25）处或附近形成致密层（30）。该致密层（30）可以用作保护层（30）。低k前体材料（20）选自具有可用于未固化或部分固化状态的性质的一组材料。该方法的主要优点在于，因为致密层（30）由低k前体层（20）形成，所以不需要向低k前体层（20）提供单独的保护层（30）本身。致密层（30）因此对低k前体层（20）具有良好的粘附性。

4. 发明申请

WO2007042797A1 POSITIVE DISPLACEMENT PUMPING CHAMBER 审中-公开
标题翻译：积极位移泵房
公开(公告)号：WO2007042797A1
公开(公告)日：2007-04-19
申请号：PCT/GB2006/003766
申请日：2006-10-11
申请人： AVIZA TECHNOLOGY LIMITED , BRANCHER, Carl, David, M. , MACNEIL, John , TROWELL, Robert, Kenneth
发明人： BRANCHER, Carl, David, M. , MACNEIL, John , TROWELL, Robert, Kenneth
IPC分类号： H01L21/00 , C23C16/455
CPC分类号： H01L21/306 , B44C1/227 , C23C16/455 , C23C16/45544 , C23C16/45589 , H01L21/6719 , H01L21/67207
摘要： A substrate processing system as illustrated at (1). A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and/or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.
摘要翻译：（1）所示的基板处理系统。基板（2）位于在装载位置（3a）和加工位置（3b）中所示的活塞（3）上。基板通过端口（4）通过门（5）装载。可以通过连接到泵（未示出）的真空排气管（6）将装载区域（7a）和/或孔室（7）泵出。在（8）处示意地示出的线性驱动机构将活塞和基板提升在室中，使得腔室的处理容积（7b）被限定为在活塞和室壁之间的差的气体传导。

5. 发明申请

WO2004053141A2 METHODS FOR RAPID FORENSIC ANALYSIS OF MITOCHONDRIAL DNA AND CHARACTERIZATIONG OF MITOCHONDRIAL DNA HETEROPLASMY 审中-公开
标题翻译：麻醉DNA快速鉴别分析方法及杂交DNA异位表征
公开(公告)号：WO2004053141A2
公开(公告)日：2004-06-24
申请号：PCT/US2003/038505
申请日：2003-12-05
申请人： ISIS PHARMACEUTICALS, INC. , ECKER, David, J. , CROOKE, Stanley, T. , BLYN, Lawrence, B. , HALL, Thomas, A. , JIANG, Yun , GRIFFEY, Richard, H. , SAMPATH, Rangarajan , HOFSTADLER, Steven, A. , MACNEIL, John , HANNIS, James, C. , WHITE, Neil , SAMANT, Vivek , ESHOO, Mark, W. , DRADER, Jared, J.
发明人： ECKER, David, J. , CROOKE, Stanley, T. , BLYN, Lawrence, B. , HALL, Thomas, A. , JIANG, Yun , GRIFFEY, Richard, H. , SAMPATH, Rangarajan , HOFSTADLER, Steven, A. , MACNEIL, John , HANNIS, James, C. , WHITE, Neil , SAMANT, Vivek , ESHOO, Mark, W. , DRADER, Jared, J.
IPC分类号： C12Q
CPC分类号： C12Q1/686 , C12Q1/6806 , C12Q1/6844 , C12Q1/6858 , C12Q1/6872 , C12Q1/6888 , C12Q1/689 , C12Q2600/156 , G01N2333/28 , G01N2333/32 , G01N2333/35 , G01N2333/36 , C12Q2563/167 , C12Q2545/101 , C12Q2531/113 , C12Q2565/627 , C12Q2545/113
摘要： The present invention provides methods for rapid forensic analysis of mitochondrial DNA and methods for characterizing heteroplasmy of mitochondrial DNA, which can be used to assess the progression of mitochondrial diseases.
摘要翻译：本发明提供线粒体DNA的快速法医分析方法和线粒体DNA异质性表征的方法，可用于评估线粒体疾病的进展。

6. 发明申请

WO2008145946A1 A METHOD OF FILLING TRENCHES ON A SUBSTRATE 审中-公开
标题翻译：在基材上填充铁素体的方法
公开(公告)号：WO2008145946A1
公开(公告)日：2008-12-04
申请号：PCT/GB2008/000961
申请日：2008-03-18
申请人： AVIZA TECHNOLOGY LIMITED , MACNEIL, John
发明人： MACNEIL, John
IPC分类号： H01L21/311 , H01L21/762
CPC分类号： H01L21/31133 , H01L21/76224
摘要： This invention relates to a method of filling trenches on a substrate. The method includes depositing an uncured film (14) into trenches (12) to a level which is least at the upper level of walls (13) and, usually significantly above that. The uncured film (14) is then etched back until the surface of the film lies below the upper level of the walls (14). An HDP cap (17) is then used to fill the remainder of the trench and any excess can be chemically mechanically polished back removing a silicon nitride hard mask at the same time.
摘要翻译：本发明涉及在衬底上填充沟槽的方法。该方法包括将未固化的膜（14）沉积到沟槽（12）中至至少在壁（13）的上部水平处，并且通常明显高于该水平。然后将未固化的膜（14）回蚀，直到膜的表面位于壁（14）的上层下方。然后使用HDP帽（17）填充沟槽的其余部分，并且可以将任何多余的化学机械抛光回去同时去除氮化硅硬掩模。

7. 发明申请

WO2002081772A1 METHODS AND APPARATUS FOR FORMING PRECURSORS 审中-公开
标题翻译：用于形成前身的方法和装置
公开(公告)号：WO2002081772A1
公开(公告)日：2002-10-17
申请号：PCT/GB2002/001592
申请日：2002-04-04
申请人： TRIKON HOLDINGS LIMITED , MACNEIL, John
发明人： MACNEIL, John
IPC分类号： C23C16/448
CPC分类号： C01B6/06 , C23C16/4488
摘要： This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to react with the ions to form the precursor.
摘要翻译：本发明涉及一种形成化学气相沉积前体的方法，包括以下步骤：（a）在源处形成金属离子，（b）将离子引入反应室; 和（c）将离子暴露在室内的气体或气体中以与离子反应以形成前体。

8. 发明申请

WO2010007356A2 GAS DELIVERY DEVICE 审中-公开
标题翻译：气体输送装置
公开(公告)号：WO2010007356A2
公开(公告)日：2010-01-21
申请号：PCT/GB2009/001731
申请日：2009-07-13
申请人： AVIZA TECHNOLOGIES LIMITED , MACNEIL, John , BAILEY, Robert, Jeffrey
发明人： MACNEIL, John , BAILEY, Robert, Jeffrey
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/4412 , C23C16/45519 , C23C16/45551
摘要： This invention relates to a gas delivery device for use in low pressure Atomic Layer Deposition at a substrate location. The device includes a first generally elongating injector (21) for supplying process gas to a process zone (22). A first exhaust zone (23) circumjacent the process zone (22); and a further injector (25) circumjacent the first exhaust zone for supplying purge or inert gas at outlet (26) surrounding the process zone (22, 24) for facing the location circumjacent the outlet to define at least a partial gas seal.
摘要翻译：本发明涉及一种用于在基底位置的低压原子层沉积中的气体输送装置。该装置包括用于将处理气体供应到处理区（22）的第一大体上伸长的喷射器（21）。围绕处理区（22）的第一排气区（23）; 以及在所述第一排气区域周围的另外的喷射器（25），用于在围绕所述处理区域（22,24）的出口（26）处供应吹扫或惰性气体，用于面对所述出口周围的位置以限定至少一个部分气体密封。

9. 发明申请

WO2002089199A2 A METHOD OF FILLING A VIA OR RECESS IN A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：在半导体衬底中填充或回收的方法
公开(公告)号：WO2002089199A2
公开(公告)日：2002-11-07
申请号：PCT/GB2002/001847
申请日：2002-04-22
申请人： TRIKON HOLDINGS LIMITED , MACNEIL, John
发明人： MACNEIL, John
IPC分类号： H01L21/768
CPC分类号： H01L21/0272 , H01L21/7688
摘要： This invention relates to a method of filling a via or recess in a semiconductor substrate including: (i) depositing or forming a sacrificial layer on a functional dielectric layer; (ii) etching a via or recess through the sacrificial and functional layers; (iii) depositing metal onto the substrate by: (iv) lifting off or ablating the metal deposited on the surface of the sacrificial layers; (v) repeating steps (iii) and (iv) until the vias or recesses are at least full of metal; and (vi) removing any remaining sacrificial layer and any excess metal.
摘要翻译：本发明涉及一种在半导体衬底中填充通孔或凹槽的方法，包括：（i）在功能介电层上沉积或形成牺牲层; （ii）蚀刻穿过所述牺牲层和功能层的通孔或凹槽; （iii）通过以下步骤将金属沉积到基底上：（iv）提起或烧蚀沉积在牺牲层表面上的金属; （v）重复步骤（iii）和（iv），直到通孔或凹槽至少充满金属; 和（vi）去除任何剩余的牺牲层和任何多余的金属。

10. 发明申请

WO2012080716A3 ELECTRO CHEMICAL DEPOSITION APPARATUS 审中-公开
公开(公告)号：WO2012080716A3
公开(公告)日：2012-06-21
申请号：PCT/GB2011/052437
申请日：2011-12-08
申请人： PICOFLUIDICS LIMITED , MACNEIL, John
发明人： MACNEIL, John
IPC分类号： C25D5/10 , C25D5/18 , C25D5/02 , C25D17/00 , C25D5/20 , C25D21/02
摘要： This invention relates to apparatus for electrochemical deposition onto the surface of a substrate. The apparatus includes an anode electrode (13) a support (12) for supporting the substrate (11) with its one surface (21) exposed at a location, the support (12) and the anode electrode (13) being relatively movable to alter the gap between the anode (13) and the location to define a chamber (23) between them and an electrical power source (18) with an ohmic contact to the seed layer (20) for creating a potential difference across the gap. The apparatus further includes a seal (14) for sealing with the seed layer (20) to define the fluid chamber (23); and the fluid inlet (16) and a fluid outlet (17) to the chamber (13).

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