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1. 发明申请

WO2009027919A3 LOW-PRESSURE GAS DISCHARGE LAMP WITH IMPROVED COLOR STABILITY 审中-公开
标题翻译：低压气体放电灯具有改进的颜色稳定性
公开(公告)号：WO2009027919A3
公开(公告)日：2009-05-28
申请号：PCT/IB2008053396
申请日：2008-08-25
申请人： KONINKL PHILIPS ELECTRONICS NV , VAN DIJK GERARDUS A R , TUIN AAFKO H , HUISMAN BART-HENDRIK , SCHRAMA WOUTER J M
发明人： VAN DIJK GERARDUS A R , TUIN AAFKO H , HUISMAN BART-HENDRIK , SCHRAMA WOUTER J M
IPC分类号： C09K11/78 , C09K11/77
CPC分类号： H01J61/70 , C09K11/7769 , C09K11/7787 , H01J61/44 , Y02B20/19
摘要： The invention relates to a low-pressure gas discharge lamp (10). The invention further relates to a compact fluorescent lamp and to a backlighting system comprising the low-pressure gas discharge lamp according to the invention. The low-pressure gas discharge lamp comprises a light-transmitting discharge vessel having discharge means (18) for maintaining a discharge emitting light substantially comprising ultraviolet light, a wall of the discharge vessel being provided with a luminescent layer (20) comprising a luminescent material for converting part of the ultraviolet light into visible light emitted by the low- pressure gas discharge lamp. The luminescent layer, in operation, has at least locally a temperature above 80 degrees Celsius and/or has at least locally a wall- load above 0.1 watt per square centimeter. The luminescent layer (20) further comprises a luminescent material (Y1-a-bLnaRb)2O3, where Ln is selected from a group comprising Gadolinium, Samarium, and Dysprosium, R is selected from a group comprising Europium, Terbium and Cerium, and a > 0.10 defining a contribution of Ln to a lattice of the luminescent material (Y1-a-bLnaRb)2O3. The effect achieved when using (Y1-a-bLnaRb)2O3 is that the low-pressure gas discharge lamp has improved color stability.
摘要翻译：本发明涉及一种低压气体放电灯（10）。本发明还涉及紧凑型荧光灯和包括根据本发明的低压气体放电灯的背光系统。低压气体放电灯包括具有用于保持基本上包括紫外光的放电发射光的放电装置（18）的透光放电容器，放电容器的壁设置有发光层（20），发光层包括发光材料用于将部分紫外光转换成由低压气体放电灯发出的可见光。在操作中，发光层至少局部地具有高于80摄氏度的温度和/或至少局部地具有高于0.1瓦/平方厘米的壁载荷。发光层（20）还包含发光材料（Y1-a-bLnaRb）2O3，其中Ln选自钆，钐和镝，R选自铕，铽和铈，以及 > 0.10定义Ln对发光材料（Y1-a-bLnaRb）2O3的晶格的贡献。使用（Y1-a-bLnaRb）2O3时的效果是低压气体放电灯具有改善的颜色稳定性。

2. 发明专利

DE602004006620D1 未知
公开(公告)号：DE602004006620D1
公开(公告)日：2007-07-05
申请号：DE602004006620
申请日：2004-05-13
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： HUITEMA HJALMAR E , HUISMAN BART-HENDRIK
IPC分类号： H01L51/40 , H01L27/28
摘要： Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer ( 307 ) and the dielectric layer ( 309 ) are structure and patterned together. The semiconductor layer ( 307 ) and the dielectric layer ( 309 ) may be removed from areas not associated with field effect transistors ( 300 ) or with crossing conductors of the first and second conductor layer ( 303, 305, 501 ).

3. 发明专利

AU2003209929A8 Electronic device, method, monomer and polymer 未知
公开(公告)号：AU2003209929A8
公开(公告)日：2003-09-29
申请号：AU2003209929
申请日：2003-03-12
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： LUB JOHAN , HUISMAN BART-HENDRIK , LEEUW DAGOBERT M DE
IPC分类号： C08G61/02 , C09K11/06 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/50

4. 发明专利

AU2003209929A1 ELECTRONIC DEVICE, METHOD, MONOMER AND POLYMER 未知
公开(公告)号：AU2003209929A1
公开(公告)日：2003-09-29
申请号：AU2003209929
申请日：2003-03-12
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： HUISMAN BART-HENDRIK , LEEUW DAGOBERT M DE , LUB JOHAN
IPC分类号： C08G61/02 , C09K11/06 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/50

5. 发明专利

AT363133T 未知
公开(公告)号：AT363133T
公开(公告)日：2007-06-15
申请号：AT04732700
申请日：2004-05-13
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： HUITEMA HJALMAR , HUISMAN BART-HENDRIK
IPC分类号： H01L51/40 , H01L27/28
摘要： Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer ( 307 ) and the dielectric layer ( 309 ) are structure and patterned together. The semiconductor layer ( 307 ) and the dielectric layer ( 309 ) may be removed from areas not associated with field effect transistors ( 300 ) or with crossing conductors of the first and second conductor layer ( 303, 305, 501 ).

6. 发明专利

DE602004005685D1 未知
公开(公告)号：DE602004005685D1
公开(公告)日：2007-05-16
申请号：DE602004005685
申请日：2004-02-26
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： HUISMAN BART-HENDRIK , MENA BENITO MARIA E , GEUNS THOMAS C
IPC分类号： H01L51/10 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
摘要： The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).

7. 发明专利

DE60122511D1 未知
公开(公告)号：DE60122511D1
公开(公告)日：2006-10-05
申请号：DE60122511
申请日：2001-05-25
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： TEN HOEVE WOLTER , DE KOK M , HUISMAN BART-HENDRIK , HERWIG T , VAN BREEMEN J
IPC分类号： C08G61/02 , C07C319/14 , C07C321/22 , C07C321/28 , C07D333/18 , C07D333/46 , C08G61/00 , C08G61/12 , H01L29/786 , H01L33/00 , H01L51/05 , H01L51/30 , H01L51/40
摘要： A polymer comprising structural units of the formula I is prepared according to a novel method, in which the starting compound R 1 'S-(CHR' 2 )-Ar-(CHR 2 )-SR 1 is polymerized with a base, preferably in an aprotic solvent. The polymer comprises 50 to 1000 structural units of the formula I. The solution comprising the polymer thus prepared has a lower viscosity than a solution of a similar polymer with a greater chain length. The solution comprising the polymer thus prepared may be applied as a layer on a substrate. Electronic components with layers prepared with the polymer of the invention show better properties.

8. 发明专利

DE602004005685T2 未知
公开(公告)号：DE602004005685T2
公开(公告)日：2007-12-27
申请号：DE602004005685
申请日：2004-02-26
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： HUISMAN BART-HENDRIK , MENA BENITO MARIA E , GEUNS THOMAS C
IPC分类号： H01L51/10 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
摘要： The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).

9. 发明专利

DE60122511T2 未知
公开(公告)号：DE60122511T2
公开(公告)日：2007-04-05
申请号：DE60122511
申请日：2001-05-25
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： TEN HOEVE WOLTER , DE KOK M , HUISMAN BART-HENDRIK , HERWIG T , VAN BREEMEN J
IPC分类号： C08G61/02 , C07C319/14 , C07C321/22 , C07C321/28 , C07D333/18 , C07D333/46 , C08G61/00 , C08G61/12 , H01L29/786 , H01L33/00 , H01L51/05 , H01L51/30 , H01L51/40
摘要： A polymer comprising structural units of the formula I is prepared according to a novel method, in which the starting compound R 1 'S-(CHR' 2 )-Ar-(CHR 2 )-SR 1 is polymerized with a base, preferably in an aprotic solvent. The polymer comprises 50 to 1000 structural units of the formula I. The solution comprising the polymer thus prepared has a lower viscosity than a solution of a similar polymer with a greater chain length. The solution comprising the polymer thus prepared may be applied as a layer on a substrate. Electronic components with layers prepared with the polymer of the invention show better properties.

10. 发明专利

AT358895T 未知
公开(公告)号：AT358895T
公开(公告)日：2007-04-15
申请号：AT04714870
申请日：2004-02-26
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： HUISMAN BART-HENDRIK , MENA BENITO MARIA E , GEUNS THOMAS C T
IPC分类号： H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/10
摘要： The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).

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