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    • 3. 发明申请
    • SOLAR CELL HAVING A CONTACT STRUCTURE WITH LOW RECOMBINATION LOSSES, AND METHOD FOR THE PRODUCTION OF SUCH SOLAR CELLS
    • 具有低重建损耗的接触结构的太阳能电池和这种太阳能电池的制造工艺
    • WO2010142684A4
    • 2011-07-21
    • PCT/EP2010058016
    • 2010-06-08
    • INST SOLARENERGIEFORSCHUNGHARDER NILS-PETERSCHMIDT JANBRENDEL ROLF
    • HARDER NILS-PETERSCHMIDT JANBRENDEL ROLF
    • H01L31/0224H01L31/062H01L31/0747
    • H01L31/022441H01L31/02167H01L31/062H01L31/0682H01L31/0747Y02E10/547
    • A concept for a highly efficient solar cell, especially on the basis of high-quality crystalline silicon, as well as a method for producing such a solar cell are disclosed. In the solar cell (1), a contact structure (3) is formed using a layered stack arrangement that comprises a first layer (19) made of an electrically insulating material, a second layer (21) made of a semiconductor material, and a third layer (22) made of an electrically conductive material. The first (dielectric) layer is disposed between the substrate (17) and the second (semiconducting) layer (21) and is designed in such a way that a significant degree of charge carrier tunneling can occur between the substrate (17) and the second layer (21) through the first layer (19). The semiconductor material of the solar cell substrate and the semiconductor material of the second layer have different electrical properties as a result of different band structures such that the electron/hole selectivity of the tunneling process within the contact structure can be influenced, thus allowing the recombination losses caused by the contact structure to be significantly reduced.
    • 提出了特别基于高质量晶体硅的高效太阳能电池的概念以及用于这种太阳能电池的生产方法。 在太阳能电池(1)通过包括由电绝缘材料制成的第一层(19)的层堆叠排列的方式形成的,一个接触结构(3),由半导体材料制成的第二层(21)和一个第三层(22),其电 包括导电材料。 第一介电层是在所述基板(17)和(21),其设置和构造成在第二半导体层之间的这种情况下的电荷载流子在基板(17)和通过所述第一层的第二层(21)之间的显著隧穿 (19)成为可能。 由于不同的带结构,太阳能电池基板的半导体材料和第二层的半导体材料具有不同的电特性。 以这种方式,可以影响接触结构内的隧穿过程的电子/空穴选择性,由此可以通过导致复合损失的接触结构显着降低。
    • 4. 发明申请
    • SOLAR CELL HAVING A CONTACT STRUCTURE WITH LOW RECOMBINATION LOSSES, AND METHOD FOR THE PRODUCTION OF SUCH SOLAR CELLS
    • 具有低重组损失和方法接触结构太阳能电池生产这种太阳能电池的
    • WO2010142684A3
    • 2011-04-28
    • PCT/EP2010058016
    • 2010-06-08
    • INST SOLARENERGIEFORSCHUNGHARDER NILS-PETERSCHMIDT JANBRENDEL ROLF
    • HARDER NILS-PETERSCHMIDT JANBRENDEL ROLF
    • H01L31/0224H01L31/062H01L31/0747
    • H01L31/022441H01L31/02167H01L31/062H01L31/0682H01L31/0747Y02E10/547
    • A concept for a highly efficient solar cell, especially on the basis of high-quality crystalline silicon, as well as a method for producing such a solar cell are disclosed. In the solar cell (1), a contact structure (3) is formed using a layered stack arrangement that comprises a first layer (19) made of an electrically insulating material, a second layer (21) made of a semiconductor material, and a third layer (22) made of an electrically conductive material. The first (dielectric) layer is disposed between the substrate (17) and the second (semiconducting) layer (21) and is designed in such a way that a significant degree of charge carrier tunneling can occur between the substrate (17) and the second layer (21) through the first layer (19). The semiconductor material of the solar cell substrate and the semiconductor material of the second layer have different electrical properties as a result of different band structures such that the electron/hole selectivity of the tunneling process within the contact structure can be influenced, thus allowing the recombination losses caused by the contact structure to be significantly reduced.
    • 它提出了一种概念,高效率的太阳能电池中,特别是基于高品质的结晶硅,以及用于这样的太阳能电池的制造方法。 在太阳能电池(1)通过包括由电绝缘材料制成的第一层(19)的层堆叠排列的方式形成的,一个接触结构(3),由半导体材料制成的第二层(21)和一个第三层(22),其电 包括导电材料。 第一介电层是在所述基板(17)和(21),其设置和构造成在第二半导体层之间的这种情况下的电荷载流子在基板(17)和通过所述第一层的第二层(21)之间的显著隧穿 (19)设置其中。 在太阳能电池基板和所述第二层的半导体材料的半导体材料具有由于各种电气特性的不同频带的结构。 以这种方式,接触结构内的隧道处理的电子/空穴的选择性可能会受到影响,从而导致通过引起可显著减少Rekombinationverluste接触结构。