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1. 发明专利

JPH0794791A CONSTRUCTION OF HIGH-TEMPERATURE SUPERCONDUCTING THIN FILM AND ITS MANUFACTURE 失效
公开(公告)号：JPH0794791A
公开(公告)日：1995-04-07
申请号：JP25628493
申请日：1993-09-21
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , NEC CORP , SANYO ELECTRIC CO
发明人： YAMAGUCHI KEIICHI , ENOMOTO YOICHI , MITSUZUKA TSUTOMU , YOSHIKAWA SHUICHI
IPC分类号： C23C14/08 , H01L39/22 , H01L39/24
摘要： PURPOSE:To facilitate the control of a large current high temperature superconductive device by a method wherein the curvature radius of the step part of a substrate having a step is not less than a specific value and a high- temperature superconducting thin film is made of composition of a specific system. CONSTITUTION:A high-temperature superconducting thin film 2 is deposited on a substrate 1 having a step. A slope exists between the upper step corner 3a and the lower step corner 3b of the substrate 1. The curvature radius of the corner 3a is predetermined to be not less than 50nm. If the radius of curvature of the corner 3a is not less than 50nm, the particle boundaries of the superconducting material are avoided and the high-temperature superconducting thin film 2 suitable for a large current can be obtained. The high-temperature superconducting thin film is made of LnBa2Cu2O7-8 (wherein Ln denotes one of Y, La, Er, Eu, Gd, Dy, and Ho) or TlxBayCazCuuOv (wherein the combination of x:y:z:u:v is one of 2:2:2:3:10, 1:2:2:3:9 and 1:2:3:4:11).

2. 发明专利

JPH0794790A SUPERCONDUCTING DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0794790A
公开(公告)日：1995-04-07
申请号：JP23396393
申请日：1993-09-21
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , NEC CORP , SHARP KK
发明人： YAMAGUCHI KEIICHI , ENOMOTO YOICHI , MITSUZUKA TSUTOMU , SUZUKI KATSUMI , FUJIMOTO MANABU
IPC分类号： B82B1/00 , H01L39/22 , H01L39/24
摘要： PURPOSE:To form only one superconducting junction plane in a minute region with a good reproducibility and facilitate the manufacture of a quantum effect device which is peculiar to superconductor by the control of the surface of a substrate. CONSTITUTION:The property of superconductor that a warped superconducting thin film containing no grain boundary is obtained if the growth plane of the thin film has a curvature radius not less than a specific value is utilized to make the curvature radius of the growth plane discontinuous on the contact line between the two warped planes 2 of a substrate 4 and to form only one plane of a grain junction 6. As a growth plane forming method, FIB lithography and ion beam etching are utilized.

3. 发明专利

JPH0940497A HIGH-TEMPERATURE SUPERCONDUCTING THIN FILM STRUCTURE 失效
公开(公告)号：JPH0940497A
公开(公告)日：1997-02-10
申请号：JP20994195
申请日：1995-07-26
申请人： NEC CORP , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： MITSUZUKA TSUTOMU , ENOMOTO YOICHI
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/02
摘要： PROBLEM TO BE SOLVED: To obtain the subject structure without deteriorating a superconducting thin film by depositing a high-temp. superconducting thin film on a silicon substrate. SOLUTION: This high-temp. superconducting thin film structure consists of the silicon substrate 1, a platinum silicide (PtSi) thin film 2 deposited on this substrate, strontium ruthenite (SrRuO3 ) thin film 3 deposited on this thin film and the high-temp. superconducting film 4 deposited on this thin film. An LnBa2 Cu3 O7 -δ (Ln: Y, La, Er, Eu, Gd, Dy, Ho) system or a Tlx Bay Caz Cuu Ov (the combination of x:y:z:u:v is any among three kinds of 2:2:2:3:10, 1:2:2:3:9, 1:2:3:4:11) system is used for the high-temp. superconducting film 4.

4. 发明专利

JP2001068757A FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC HEAD, AND MAGNETIC MEMORY 失效
公开(公告)号：JP2001068757A
公开(公告)日：2001-03-16
申请号：JP23872699
申请日：1999-08-25
申请人： NEC CORP
发明人： MATSUDA KAZUHIRO , KAMIJO ATSUSHI , MITSUZUKA TSUTOMU , TSUGE HISANAO
IPC分类号： G11B5/39 , G01R33/09 , H01F10/32 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To obtain an exchange bias ferromagnetic tunnel junction element which has a high magnetoresistance change rate and is never deteriorated in characteristics due to a thermal treatment which is required to be carried out at high temperatures for many hours when an Mn ordered alloy is used as an anti-ferromagnetic body. SOLUTION: This ferromagnetic tunnel junction element has such a structure where a compound ferromagnetic layer 14 which contains N1 or a Ni alloy is arranged adjacent to a tunnel barrier layer 13, and a compound ferromagnetic layer 15 which contains Co or a Co alloy is arranged adjacent to Mn ordered alloy anti-ferromagnetic layer 16. As to a ferromagnetic tunnel junction element provided with a tunnel barrier layer pinched between ferromagnetic layers, the ferromagnetic layer (stationary layer) located on an anti-ferromagnetic layer side is formed of, at least, a two or more-layered ferromagnetic film.

5. 发明专利

JPH03256305A PERPENDICULAR MAGNETIC RECORDING FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03256305A
公开(公告)日：1991-11-15
申请号：JP5544690
申请日：1990-03-06
申请人： NEC CORP
发明人： MITSUZUKA TSUTOMU
IPC分类号： G11B5/66 , G11B5/64 , G11B5/65 , G11B5/85 , H01F10/16 , H01F41/20
摘要： PURPOSE:To obtain a perpendicular magnetic recording film of a cobalt/vanadium composition modifying structure which has a large saturation magnetization value, by making the thicknesses of a cobalt and vanadium layer within specific ranges respectively in the thin film having the multilayer structure in which cobalt and vanadium are laminated alternately. CONSTITUTION:Vanadium layers 9 and cobalt layers 8 are laminated alternately on a substrate 2 using the device for depositing them alternately. A film having a perpendicular magnetic anisotropy is obtained when the thickness of the cobalt layer is in the range of 2.5Angstrom to 30Angstrom . When the thickness of the vanadium layer is 5Angstrom -70Angstrom in this region, the value of the saturation magnetization of the film can be larger than the one of Co80Cr20 alloy, and the magnetic recording density of the film can be increased. Also, when forming the film, it is preferable that the degree of vacuum of a base is made to be 10 Torr or more, and the temperature of substrate is made to be -50 deg.C or more and +300 deg.C C or less. Further, after forming the films repeating predetermined times within the above-mentioned thickness of the film, a heat treatment is performed at 150-450 deg.C. Thereby, the vertically magnetized film which has the larger saturation magnetization than the one of the film formed with no heat treatment is obtained.

6. 发明专利

JP2006245146A Magneto-resistance effect element and its manufacturing method 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：JP2006245146A
公开(公告)日：2006-09-14
申请号：JP2005056684
申请日：2005-03-01
申请人： Nec Corp , 日本電気株式会社
发明人： MITSUZUKA TSUTOMU
IPC分类号： H01L43/12 , G01R33/09 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which has a high MR ratio and has a high exchange coupling magnetic field Hex and a high coupling magnetic field Hua.
SOLUTION: The method of manufacturing the magneto-resistance effect element comprises a process (a) of forming a buffer layer 3 above a substrate 2, a process (b) of forming an anti-ferromagnetic layer 4 on the buffer layer 3, a process (c) of forming a fixed layer 5 on the anti-ferromagnetic layer 4, a process (d) of forming a metal film 9 used for a tunnel barrier layer 6 on the fixed layer 5 and then forming the tunnel barrier layer 6 by oxidizing the metal film 9, and a process (e) of forming a free layer 7 on the tunnel barrier layer 6. Oxygen partial pressure before first film formation in the fixed layer 5 and/or oxygen partial pressure before second film formation in the free layer 7 is lower than oxygen partial pressure before third film formation in the buffer layer 3.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高MR比并具有高交换耦合磁场Hex和高耦合磁场Hua的磁阻效应元件。解决方案：制造磁阻效应元件的方法包括在衬底2上形成缓冲层3的工艺（a），在缓冲层3上形成反铁磁层4的工艺（b），在反铁磁层4上形成固定层5的方法（c），在固定层5上形成用于隧道势垒层6的金属膜9，然后形成隧道势垒层的工艺（d）通过氧化金属膜9以及在隧道势垒层6上形成自由层7的工艺（e）。在固定层5中的第一成膜之前的氧分压和/或第二膜形成之前的氧分压自由层7在缓冲层3中形成第三膜之前低于氧分压。（C）2006年，JPO＆NCIPI

7. 发明专利

JPH04116163A PRODUCTION OF SILVER SINGLE CRYSTAL THIN FILM AND ARTIFICIAL METAL LATTICE 失效
公开(公告)号：JPH04116163A
公开(公告)日：1992-04-16
申请号：JP23208690
申请日：1990-08-31
申请人： NEC CORP
发明人： MITSUZUKA TSUTOMU , KAMIJO ATSUSHI
IPC分类号： C23C14/18 , C23C14/14 , C23C14/46 , C30B23/02 , C30B29/68
摘要： PURPOSE:To form the buffer layer of an Ag single crystal thin film excellent in surface flatness between the artificial metal lattice and a substrate at the time of forming the thin film on the substrate of MgO or Si by ion-beam sputtering by keeping the subtrate at a specified temp. CONSTITUTION:An ion-beam sputtering system is used to laminate an Ag (100) single crystal film 2 on an Si (100) or MgO (1 00) substrate 1 and an Ag (111) single crystal film on an Si (111) substrate 1. A vacuum chamber 10 is provided with a Kaufmann-type ion source 11, and an Ag target 5 is sputtered. The divergence field of the sputtered particles 5' is limited by a top plate 6, a shutter is opened or closed while monitoring the film thickness by the shutter 7 and quartz-resonator film thickness meter 8 driven from outside the vacuum chamber to keep the substrate at 50-250 deg.C, hence the (100) and (111) silver single crystal thin film excellent in surface flatness is obtained, and an artificial metal lattice having a better characteristic than before is obtained.

8. 发明专利

JPH02129363A VACUUM DEPOSITION DEVICE 失效
公开(公告)号：JPH02129363A
公开(公告)日：1990-05-17
申请号：JP28132588
申请日：1988-11-09
申请人： NEC CORP
发明人： KAMIJO ATSUSHI , MITSUZUKA TSUTOMU
IPC分类号： F16K27/00 , B29C41/00 , C23C14/24 , C30B23/08 , F15D1/02 , F16K24/02 , H01L21/203 , H01L21/22
摘要： PURPOSE:To facilitate the opening and closing of the shutter and to stably control the thickness of a film in the order of magnitude of an atom layer by forming a shutter plate surface in contact with an aperture shield with a nonmetal, reducing the frictional force at the sliding contact part. CONSTITUTION:This vacuum deposition device is formed by a vapor deposition source 2 provided in a vacuum vessel 1, the aperture shield 6, a shutter 4, and a shutter driving part 5 connected to the shutter 4. The aperture shield 6 is provided with a molecular beam discharge hole 16, and controls the discharge path of a molecular beam 3. The shutter 4 is slidably set on the hole 16, and provided with a shutter plate 41 for opening and closing the hole 16. The shutter surface in contact with the aperture shield 6 is made of a specified nonmetal, and the gas discharge amt. of the nonmetal is controlled to Torr.l/ sec.cm .

9. 发明专利

JP2007027493A Magnetoresistive element and its manufacturing method 审中-公开
标题翻译：磁电元件及其制造方法
公开(公告)号：JP2007027493A
公开(公告)日：2007-02-01
申请号：JP2005208816
申请日：2005-07-19
申请人： Nec Corp , 日本電気株式会社
发明人： MITSUZUKA TSUTOMU
IPC分类号： H01L43/10 , G11B5/39 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element having no deterioration of characteristics such as the deterioration of MR characteristics by the increase of a series resistance for a heat treatment process in an element manufacturing process. SOLUTION: The magnetoresistive element is used having an antiferromagnetic-substance layer 3, a fixed ferromagnetic-substance layer 11, a first non-magnetic substance layer 7, a free ferromagnetic-substance layer 8, and a first oxide layer 5. The antiferromagnetic-substance layer 3 is formed on the upper surface side of a substrate 1. The fixed ferromagnetic-substance layer 11 is formed on the antiferromagnetic-substance layer 3. The first non-magnetic substance layer 7 is formed on the fixed ferromagnetic-substance layer 11. The free ferromagnetic-substance layer 8 is formed on the first non-magnetic substance layer 7. The first oxide layer 5 is formed between the antiferromagnetic-substance layer 3 and the first non-magnetic substance layer 7 as a conductive material in a stoichiometric composition, and has a feature of a ferromagnetic substance or an antiferromagnetic substance at a temperature lower than a room temperature. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在元件制造过程中通过增加用于热处理工艺的串联电阻而不会劣化MR特性的特性劣化的磁阻元件。解决方案：磁阻元件使用具有反铁磁性物质层3，固定铁磁物质层11，第一非磁性物质层7，自由铁磁物质层8和第一氧化物层5。反铁磁物质层3形成在基板1的上表面侧上。固定铁磁物质层11形成在反铁磁性物质层3上。第一非磁性物质层7形成在固定的铁磁性物质层3上。物质层11.自由铁磁物质层8形成在第一非磁性物质层7上。第一氧化物层5形成在反铁磁性物质层3和第一非磁性物质层7之间，作为导电材料在化学计量组成中，并且在低于室温的温度下具有铁磁性物质或反铁磁物质的特征。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005129564A Ferromagnetic tunnel-junction film forming device 审中-公开
标题翻译： FERROMAGNETIC TUNNEL-JUNCTION FILM FIMM DEVICE
公开(公告)号：JP2005129564A
公开(公告)日：2005-05-19
申请号：JP2003360512
申请日：2003-10-21
申请人： Nec Corp , 日本電気株式会社
发明人： MITSUZUKA TSUTOMU , OSHIMA NORIKAZU
IPC分类号： G11B5/39 , H01L21/31 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a TMR film having stable junction characteristics even when the oxidizing force of an oxidizing chamber changes with time.
SOLUTION: A TMR-film forming device in which an apparatus capable of measuring the thickness of a substrate-surface oxide film has the oxidizing chamber is used. A substrate forming the device differs from one measuring the thickness of the surface oxide film in this case. When the device is used, a tunnel barrier is oxidized under the optimum oxidizing condition while using the thickness of the oxidizing silicon film formed on the surface of a silicon substrate as a monitor.
COPYRIGHT: (C)2005,JPO&NCIPI

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