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    • 8. 发明专利
    • Method for cutting film
    • 切片方法
    • JP2012200824A
    • 2012-10-22
    • JP2011068256
    • 2011-03-25
    • Ube Industries Ltd宇部興産株式会社
    • HAMADA KAZUYUKIOKAMURA YUTARO
    • B26D1/24B26D3/00
    • PROBLEM TO BE SOLVED: To provide a method for cutting a film which is for cutting a film such as a polyimide film and the like used for a flexible circuit board.SOLUTION: The method for cutting the film includes inserting a continuously travelling film between an upper blade 31 and a lower blade 41 which are rolled to cause mutual slide-contact of one side faces of respective edges, and cutting the film along the direction of the travel so that the film is divided in the width direction. The upper blade 31 has a cutting edge angle θ1 of 30-80° and surface roughness Rz of 0.2Z or less for a surface facing the lower blade. The upper blade 31 and lower blade 41 are brought into slide contact so that penetration depth D of the upper blade 31 to the lower blade 41 becomes 0.2-0.5 mm, and the film having mean thickness of 40-230 μm is cut.
    • 解决的问题:提供一种用于切割用于柔性电路板的用于切割诸如聚酰亚胺膜等的膜的膜的方法。 解决方案:切割薄膜的方法包括:将上下叶片31和下叶片41之间连续移动的薄膜插入滚动,以使各边缘的一个侧面相互滑动接触,并沿着该边缘切割薄膜 行进方向,使得胶片在宽度方向上分开。 上刀片31的切削刃角θ1为30-80°,表面粗糙度Rz为0.2Z以下。 上刀片31和下刀片41被滑动接触,使得上刀片31到下刀片41的穿透深度D变为0.2-0.5mm,并且切割平均厚度为40-230μm的膜。 版权所有(C)2013,JPO&INPIT
    • 9. 发明专利
    • POSITIVE CHARACTERISTIC THERMISTOR ELEMENT
    • JPH09106901A
    • 1997-04-22
    • JP26523495
    • 1995-10-13
    • UBE INDUSTRIES
    • ODA MASARUHAMADA KAZUYUKIFUJIMOTO TETSUYAKURAHASHI MASARU
    • H01C7/02
    • PROBLEM TO BE SOLVED: To limit current to protect against overvoltage in a short period of time using this thermistor element as an overcurrent limiting element by a method wherein a layer, composed of at least three layers in the direction vertical to an electrodes surface and having a high specific resistance, is provided almost in the center part of a ceramic element as an overcurrent restricting element. SOLUTION: A specific resistance (Q.cm) of the ceramic element 3 of the center part is higher than the specific resistance of the ceramic elements 2 and 4 of the surface layer. On this positive characteristic thermistor(PCT) element, an electric field is concentrated on the high resistance layer of the PCT element center part when very large overvoltage such as 600V is applied. As a result, the center part of the PCT element is laminarly cracked with certainly by the difference of temperature generated between the surface layer and the inner layer of the PCT element. On the other hand, when 200V or thereabout is applied, current can be controlled in a short period of time to limit overcurrent.