专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH06191995A METHOD FOR PRODUCTION OXIDE SUPERCONDUCTIVE THIN FILM 失效
公开(公告)号：JPH06191995A
公开(公告)日：1994-07-12
申请号：JP34288092
申请日：1992-12-22
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ASAHI GLASS CO LTD , FUJIKURA LTD , SHOWA ELECTRIC WIRE & CABLE CO , TOHOKU ELECTRIC POWER CO
发明人： KAMEI MASAYUKI , USUI TOSHIO , AOKI YUJI , OOKODA SEIYA , MORISHITA TADATAKA
IPC分类号： C30B29/22 , G01N23/225 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To provide the method capable of producing the oxide superconductive thin film having a high quality. CONSTITUTION:The method for producing a multi-element oxide superconductive thin film by forming a deposited film on a substrate in a film-forming device is characterized by injecting electron beams on the surface of the deposited film at prescribed incidence angles during the deposition of the deposited film to excite atoms on the surface of the deposited film, determining the film thickness dependency of the strength of a characteristic X ray generated from the excited atoms on the surface of the deposited film, determining the taking-angle dependency of the strength of the characteristic X ray generated from the excited atoms on the surface of the deposited film to confirm the joining surface of the deposited film, the components in the surface atom layer of the deposited film and the flatness of the deposited film, and subsequently forming the deposited film, while controlling the film-forming conditions of the deposited film on the basis of the confirmed results. This method permits to obtain the deposited film good in flatness an coverage and thereby the production of the oxide superconductive thin film having a high quality is attained.

2. 发明专利

JPH0518730A SURFACE ANALYZING APPARATUS 失效
公开(公告)号：JPH0518730A
公开(公告)日：1993-01-26
申请号：JP19706591
申请日：1991-07-11
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , ASAHI GLASS CO LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01B15/00 , G01B15/04 , G01B15/08 , G01N23/225 , H01J37/244 , H01J37/252 , H01J37/256
摘要： PURPOSE:To carry out component analysis of a specimen and obtain an enlarged image of the surface of the specimen simultaneously by radiating electron beam to the surface of the specimen and detecting the x-ray and secondary electron beam emitted by excitation of the surface of the specimen. CONSTITUTION:Electron beam is struck against the surface of a specimen at incidence angle thetag (

3. 发明专利

JPH0545308A SURFACE ANALYZING APPARATUS 失效
公开(公告)号：JPH0545308A
公开(公告)日：1993-02-23
申请号：JP22872491
申请日：1991-08-14
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , SHOWA ELECTRIC WIRE & CABLE CO , ASAHI GLASS CO LTD
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01N23/225 , G01N23/223
摘要： PURPOSE:To obtain an apparatus which can capture the characteristic X rays from the surface of an excited sample and can analyze the component of the surface of the sample and wherein an energy dispersion type X-ray detector for capturing the characteristic X rays can be readily attached and removed. CONSTITUTION:An energy source for emitting energy particles into a sample 1 and an energy dispersion type X-ray detector 18 are attached to a vacuum container 20 for containing a sample 1. A connecting chamber 79 which is freely evaluated into the vacuum state is independently formed for the vacuum container 20. The energy dispersion type X-ray detector 28 is attached to the connecting chamber 79 so that the detector can be freely attached and removed. The characteristic X rays emitted from the surface of the excited sample 1 are captured at the total reflection angle. Thus, the component of the thin film of the surface of the sample 1 can be analyzed. When, the energy dispersion type X-ray detector 28 is removed from the connecting chamber 79, the detector can be removed without breaking the vacuum state of the vacuum container 20.

4. 发明专利

JPH0545307A METHOD AND APPARATUS FOR ANALYZING SURFACE 失效
公开(公告)号：JPH0545307A
公开(公告)日：1993-02-23
申请号：JP22872391
申请日：1991-08-14
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , ASAHI GLASS CO LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , KAMEI MASAYUKI , AOKI YUJI , MORISHITA TADATAKA
IPC分类号： G01N13/00 , G01N23/223
摘要： PURPOSE:To improve the detecting accuracy at the thin part of the surface of a sample by emitting X rays on the sample at a low incident angle, generating fluorescence X rays from the sample, and taking out the X rays in the vicinity of the total reflection angle of the X rays with an energy-dispersion type X-ray detector. CONSTITUTION:X rays are emitted from an X-ray generator 48 on the surface of a sample 1 at an incident angle of about 4 deg. or less. Then, the part of the surface is excited, and the fluorescence X rays (characteristic X rays) are emitted. The characteristic X rays are rapidly increased at the specified take-out angle of 4 deg. or less (total reflecting angle). At this angle, the characteristic X rays are taken out with a probe 30 of an energy-dispersion X-ray detector 28. Thus, the characteristic X rays corresponding to the component of the thin film of the surface of the sample can be specified. With the incident angle of the X rays as THETAg, a diffraction-X-ray detecting device 18 is moved up and down along a rail member 17. The X-ray taking-out angle is adjusted so that the angle becomes 2THETAg with respect to the extending line of the X rays in the incident direction. Under this state, the sample 1 and the detecting device 18 are turned by the specified angle at the same time. Thus, the X-ray diffraction peak of the surface part of the sample can be detected.

5. 发明专利

DE69232214D1 未知
公开(公告)号：DE69232214D1
公开(公告)日：2002-01-03
申请号：DE69232214
申请日：1992-07-10
申请人： INT SUPERCONDUCTIVITY TECH , FUJIKURA LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01N23/22 , G01N23/225 , G01Q30/02 , G01Q30/16 , H01J37/295 , H01J37/244 , H01J37/256
摘要： An apparatus for solid surface analysis capable of carrying out the X-ray fluorescence analysis of the sample surface according to the characteristic X-rays detected by the energy dispersive X-ray detector. The apparatus can also obtain an enlarged image of the sample surface according to the secondary electrons emitted from the excited sample surface detected by the electron detector. The apparatus can also carry out an X-ray diffraction analysis of the sample surface according to diffracted X-rays detected by the diffracted X-ray detector. The apparatus is also capable of attaching or detaching the energy dispersive X-ray detector easily by incorporating a connection room which can be put in a vacuum state independent of the vacuum chamber.

6. 发明专利

DE69232214T2 未知
公开(公告)号：DE69232214T2
公开(公告)日：2002-05-08
申请号：DE69232214
申请日：1992-07-10
申请人： INT SUPERCONDUCTIVITY TECH , FUJIKURA LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01N23/22 , G01N23/225 , G01Q30/02 , G01Q30/16 , H01J37/295 , H01J37/244 , H01J37/256
摘要： An apparatus for solid surface analysis capable of carrying out the X-ray fluorescence analysis of the sample surface according to the characteristic X-rays detected by the energy dispersive X-ray detector. The apparatus can also obtain an enlarged image of the sample surface according to the secondary electrons emitted from the excited sample surface detected by the electron detector. The apparatus can also carry out an X-ray diffraction analysis of the sample surface according to diffracted X-rays detected by the diffracted X-ray detector. The apparatus is also capable of attaching or detaching the energy dispersive X-ray detector easily by incorporating a connection room which can be put in a vacuum state independent of the vacuum chamber.

7. 发明专利

JP2007154242A Method for producing mixture film of oxides 审中-公开
标题翻译：生产氧化物混合物的方法
公开(公告)号：JP2007154242A
公开(公告)日：2007-06-21
申请号：JP2005349315
申请日：2005-12-02
申请人： Asahi Glass Co Ltd , National Institute For Materials Science , 旭硝子株式会社 , 独立行政法人物質・材料研究機構
发明人： KAMEI MASAYUKI , MIYAGI TAKAHIRA
IPC分类号： C23C14/34 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a mixture film in which two types of oxides can exist in a wide range of an abundance ratio in a film thickness direction.
SOLUTION: The method for producing the mixture film of the oxides by using a sputtering technique includes a step of forming the mixture film of the oxide of a first element and the oxide of a second element on a substrate, by sputtering a target containing the first element and a target containing the second element, in an atmosphere containing an oxidative gas, in a film forming chamber accommodating the targets. The above step includes changing the abundance ratio of the oxide of the first element and the oxide of the second element in the mixture film in the film thickness direction, by sputtering the respective targets of containing the first element and the second element in a transition region, and changing an electric power, and an OED value or voltage for the respective targets.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供一种混合膜的制造方法，其中可以在膜厚度方向上的宽范围的丰度比范围内存在两种类型的氧化物。解决方案：通过使用溅射技术制造氧化物的混合膜的方法包括在基板上形成第一元素的氧化物和第二元素的氧化物的混合膜的步骤，通过溅射靶在含有氧化性气体的气氛中含有第一元素和含有第二元素的靶，在容纳靶的成膜室中。上述步骤包括通过在包含第一元素和第二元素的过渡区域中溅射含有第一元素和第二元素的各个靶，来改变膜厚度方向上混合膜中的第一元素的氧化物和第二元素的氧化物的丰度比，并且改变电力，以及用于各个目标的OED值或电压。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JPH02137735A PREPARATION OF BISMUTH-BASED SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH02137735A
公开(公告)日：1990-05-28
申请号：JP29020788
申请日：1988-11-18
申请人： ASAHI GLASS CO LTD
发明人： MORIMOTO TAKESHI , MATSUBARA TOSHIYA , KAMEI MASAYUKI
IPC分类号： C01G29/00 , C01G1/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To readily obtain Bi-based superconducting thin film having high critical temperature and high content of 2223 phase by heating and calcining a Bi-based oxide superconducting thin film in vapor of lead oxide. CONSTITUTION:A Bi-based oxide superconducting thin film of preferably Bi-Sr- Ca-Cu-O base formed on a substrate preferably comprising MgO single crystal or SrTiO3 is heat-treated in the following way. Namely, the superconducting thin film, for example, is heated and calcined in a heat-resistant closed container such as quartz or porcelain crucible with lead oxide at 800-900 deg.C, especially about 850 deg.C, namely under vapor pressure suitable for the treatment of lead oxide. Consequently, a Bi-based superconducting thin film having high critical temperature and high content of 2233 phase is readily obtained without requiring complicated device and control.

9. 发明专利

JPH0222456A PLASMA-ASSISTED VAPOR DEPOSITION METHOD FOR OXIDE SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH0222456A
公开(公告)日：1990-01-25
申请号：JP17193588
申请日：1988-07-12
申请人： ASAHI GLASS CO LTD
发明人： MORIMOTO TAKESHI , SUZUKI KOICHI , KAMEI MASAYUKI
IPC分类号： H01L39/24 , C01B13/14 , C01G1/00 , C01G3/00 , C04B41/87 , C23C14/08 , C23C14/24 , H01B13/00
摘要： PURPOSE:To produce a good-quality oxide superconductor thin film without need for post-heat treatment by using oxygen-contg. plasma produced by an arc discharge-type plasma source in the formation of an oxide superconductor thin film by vapor deposition. CONSTITUTION:An oxygen-contg. gas (e.g., argon) is introduced into a chamber evacuated to a low pressure, and a raw material to be vapor-deposited is heated and vaporized. The vapor is activated by oxygen-contg. plasma produced by an arc discharge-type plasma source (using a composite LaB6 cathode provided with an auxiliary electrode), and deposited on a substrate to form a thin film. In this case, an MgO single crystal (100) face, etc., can be used as the substrate, and Y-Ba-Cu-O, etc., as the film component. The oxygen partial pressure in the atmosphere when the film is formed is preferably controlled to 5X10 -4X10 Torr, the substrate temp. to 400-800 deg.C, and the film forming rate to 150-1000Angstrom /min. By this method, an oxide superconductor thin film having excellent characteristics such as high critical current density is obtained without need for post-heat treatment.

10. 发明专利

JP2000273618A PRODUCTION OF TRANSPARENT ELECTRICALLY CONDUCTIVE THIN FILM 失效
公开(公告)号：JP2000273618A
公开(公告)日：2000-10-03
申请号：JP8396799
申请日：1999-03-26
申请人： ASAHI GLASS CO LTD
发明人： YASUI ITARU , KAMEI MASAYUKI , SHIN NAOKO
IPC分类号： G09F9/30 , C03C17/245 , C23C14/08 , C23C14/34 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To effectively incorporate fluorine into a transparent electroconductive thin film and to obtain the thin film smooth in the surface and low in specific resistance by executing sputtering using a target contg. indium fluoride and indium oxide. SOLUTION: As a target, solid indium fluoride InF3 and solid indium oxide In2O3 are used. These may be in the form of powder or sintered bodies respectively. They are used preferably as single substance. In particular, they are preferably used in such a manner that the surface of a sintered body disk composed of indium oxide is disposed with the tablet, powder off indium fluoride or the mixture thereof by the quantity to be required. Their quantity is suitably controlled to the one by which the content of fluorine in the transparent electroconductive film to be formed reaches the prescribed value. For controlling the content of fluorine in the transparent electroconductive film to 0.005 to 0.3 by atomic ratio to In, indium, fluoride and indium oxide are used so as to control the molar ratio preferably to (0.005:1) to (0.5:1).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式