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1. 发明专利

JPH03122272A THIN FILM FORMATION 失效
公开(公告)号：JPH03122272A
公开(公告)日：1991-05-24
申请号：JP25869689
申请日：1989-10-05
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ARUBAKKU CORP CENTER KK
发明人： IZUMI HIROHIKO , MORISHITA TADATAKA
IPC分类号： C23C14/34 , H01L21/203 , H01S3/00
摘要： PURPOSE:To form a thin film at low temp. with superior reproducibility by providing a netlike control electrode between a target and a substrate and controlling the kind and energy of the ions made incident on the substrate from the plasma formed by means of laser beam irradiation. CONSTITUTION:A target 3 disposed in a vacuum vessel 1 is irradiated with a laser beam 4, by which a thin film is formed on a substrate 6 by means of target materials evaporated from a target 3. A netlike control electrode 9 is disposed between this substrate 6 and the above target 3. Subsequently, when a negative electric potential is impressed on the above electrode 9, negative ions in a plasma 13 cannot reach the substrate 6 across the electrode 9 and metallic positive ions are made incident on the substrate 6. Further, on the contrary, when a positive electric potential is impressed on the electrode 9, negative ions reach the substrate 6, by which oxygen content in the film can be controlled.

2. 发明专利

JPH05149720A METHOD AND DEVICE FOR INSPECTING SUPERCONDUCTING OXIDE FILM 失效
公开(公告)号：JPH05149720A
公开(公告)日：1993-06-15
申请号：JP31508991
申请日：1991-11-29
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , HITACHI LTD
发明人： HIGASHIYAMA KAZUHISA , HIRABAYASHI IZUMI , MORISHITA TADATAKA , TANAKA SHOJI
IPC分类号： G01B11/06 , G01B11/30 , H01L39/00 , H01L39/24
摘要： PURPOSE:To measure the forming speed, thickness, and surface smoothness of a superconducting oxide film by irradiating the film with a laser beam while the film is formed on a substrate and measuring the intensity of reflected light from the irradiated section of the film. CONSTITUTION:When a superconducting oxide film 20 formed on a substrate 5 is irradiated with a laser beam 25 having a wavelength lambda, a phase difference delta is produced between a reflected beam 26 form the upper surface of the film 20 and another reflected beam 27 from the lower surface of the film 20. The difference can be expressed by delta=2pi/lambda1.2nd.Cosx+ or -pi, where lambda1, (n), (d), and (x) respectively represent the wavelength of the laser beams 25, refractive index of the film 20, thickness of the film 20, and incident angle of the laser beam 25 in the film 20. It can be understood from the expression that the film thickness (d) at which the intensities of the reflected beams become maximum and minimum are proportional to 1/4 of the wavelength of the laser beam. Therefore, when each peak value is detected, the film thickness (d) and film forming speed can be found. In addition, as the film thickness (d) increases, the vibrational amplitudes of the reflected beams become smaller and the value of a base line decreases. Since the light absorbing amount of the film 25 is a function of the film thickness, the surface smoothness of the film 25 can be found from the intensity reducing speeds of the reflected beams by calculating the function.

3. 发明专利

JPH05139737A OXIDE THIN FILM AND FILM FORMING METHOD THEREFOR 失效
公开(公告)号：JPH05139737A
公开(公告)日：1993-06-08
申请号：JP30082091
申请日：1991-11-15
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , HOKKAIDO ELECTRIC POWER
发明人： HONMA KOUJI , MORISHITA TADATAKA
IPC分类号： C01G1/00 , C01G3/00 , C04B41/89 , C23C14/08 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/22 , H01L39/24
摘要： PURPOSE:To provide a method to film-form a joint film of the 1st oxide thin film exhibiting superconductive property with the 2nd oxide thin film exhibiting insulation property or, if necessary, semiconductive property by a method enhancing production efficiency and improving film quality and film property. CONSTITUTION:The 1st and 2nd target having the same chemical composition are used. The 1st oxide thin film is formed by sputtering the 1st target with 100V target cathode voltage by from an external D.C. voltage source. Next, when switching to the 2nd target, target cathode voltage is changed to 50V self-bias voltage without changing another film-forming condition. By the change, sputtering of the 2nd target is executed in succession to sputtering of the 1st target without discontinuance of time and the 2nd oxide thin film is film-formed on the 1st oxide thin film.

4. 发明专利

JPH10330193A PRODUCTION OF OXIDE SUPERCONDUCTING FILM 失效
公开(公告)号：JPH10330193A
公开(公告)日：1998-12-15
申请号：JP9819298
申请日：1998-03-27
申请人： NEC CORP , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： MIURA SADAHIKO , MORISHITA TADATAKA , ENOMOTO YOICHI
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B13/00 , H01L21/368 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To make at high rate an oxide superconducting film with smooth surface and uniform thickness on a simple substrate structure. SOLUTION: This oxide supreconducting film is produced by the following method: a melt 1 for liquid phase epitaxial growth to be used comprises 10 wt.% Y1 Ba2 Cu3 Ox and 90 wt.% Ba3 Cu7 O10 , while a seed crystal (substrate) 2 to be used comprises 100 wt.% MgO; a film-forming atmosphere consists of 2 at.% oxygen and 98 at.% nitrogen; film-forming temperature is set at 900-970 deg.C; the objective film, i.e., Y1 Ba2 Cu3 Ox film 3, is formed by immersing the seed crystal 2 in the melt 1; after finishing the film formation, a rotating shaft 4 supporting the seed crystal 2 is gradually pulled up from position (a) via position (b) to position (c) as shown in the figure; the appropriate angle of inclination of the substrate relative to the melt 1 is 1 to 44 degree; subsequently, the shaft 4 is revolved at a rate of as high as 300 to 3,000 rpm for 5 s to 5 min as shown in (d) in the figure to remove an excess of residual melt 5 from the substrate.

5. 发明专利

JPH0518730A SURFACE ANALYZING APPARATUS 失效
公开(公告)号：JPH0518730A
公开(公告)日：1993-01-26
申请号：JP19706591
申请日：1991-07-11
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , ASAHI GLASS CO LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01B15/00 , G01B15/04 , G01B15/08 , G01N23/225 , H01J37/244 , H01J37/252 , H01J37/256
摘要： PURPOSE:To carry out component analysis of a specimen and obtain an enlarged image of the surface of the specimen simultaneously by radiating electron beam to the surface of the specimen and detecting the x-ray and secondary electron beam emitted by excitation of the surface of the specimen. CONSTITUTION:Electron beam is struck against the surface of a specimen at incidence angle thetag (

6. 发明专利

JPH0517877A METHOD AND APPARATUS FOR PRODUCTION OF OXIDE THIN FILM 失效
公开(公告)号：JPH0517877A
公开(公告)日：1993-01-26
申请号：JP16973491
申请日：1991-07-10
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHARP KK , KOBE STEEL LTD , ELECTRIC POWER DEV CO
发明人： KITA RYUSUKE , HASE TAKASHI , SASAKI MASATO , MORISHITA TADATAKA
IPC分类号： C23C8/12 , C04B41/50 , C04B41/85 , C04B41/87 , C23C8/16 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/02
摘要： PURPOSE:To provide the method and apparatus for producing an oxide thin film which produce the oxide thin film having excellent crystallinity and purity with good productivity while exactly controlling the compsh. thereof. CONSTITUTION:The pressure in a vacuum chamber 1 is regulated to attain >=1X10 Torr and thereafter, prescribed metal elements are deposited by evaporation on a substrate 3 to form the metallic thin film within the vacuum chamber 1. In succession, a cover member 7 is risen and is brought into tight contact with a receiving part 10. A hermetic chamber which hermetically seals the substrate 3 by enclosing the substrate is constituted in the vacuum chamber 1 in this way. Geseous O2 is directly introduced into this hermetic chamber through a gas piping 8 in the state of maintaining the vacuum degree around the hermetic chamber to oxidize the above-mentioned metallic thin film and to form the oxide thin film. Simultaneously, the gas in the hermetic chamber is directly discharged outside the vacuum chamber through the gas piping 40.

7. 发明专利

JPH04311561A METHOD AND DEVICE FOR FORMING THIN FILM 失效
公开(公告)号：JPH04311561A
公开(公告)日：1992-11-04
申请号：JP7635991
申请日：1991-04-09
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ULVAC KOOPOREETO CENTER KK , HITACHI CABLE , MITSUBISHI MATERIALS CORP
发明人： IZUMI HIROHIKO , OHATA KAZUMI , FUJINO SHUICHI , MORISHITA TADATAKA
IPC分类号： B01J19/12 , C01G1/00 , C01G3/00 , C23C14/28 , C30B29/22
摘要： PURPOSE:To continuously and stably form an excellent thin film on a substrate for a long time by partially melting a target with a heating means and irradiating the target with a thin film forming laser beam. CONSTITUTION:A vacuum pump 9 and a gas feed part 8 are actuated to adjust the pressure and atmosphere in a vacuum vessel 1, and a target 5 is heated by a heating means 6 and melted. Under such conditions, a thin film forming laser beam from a laser oscillator 7 is condensed on the molten target 5 through an inlet window 1a, then the target is irradiated the laser beam. Accordingly, a thin film forming atom is spattered from the target and deposited on the opposed target 3 held at a specified temp. to form a thin film. As a result, a fusifomr structre is not formed on the target 5 surface, the surface condition of the target 5 is kept constant, and an excellent thin film is continuously formed for a long time.

8. 发明专利

JPH03260063A FORMATION OF OXIDE THIN FILM 失效
公开(公告)号：JPH03260063A
公开(公告)日：1991-11-20
申请号：JP5662890
申请日：1990-03-09
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , OKI ELECTRIC IND CO LTD , HOKKAIDO ELECTRIC POWER , CHUGOKU ELECTRIC POWER , MITSUBISHI MATERIALS CORP
发明人： HONMA KOUJI , TAKAHASHI HIROMI , KAWAMOTO SHINJI , KONDO HIDEYUKI , MORISHITA TADATAKA
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C23C14/08 , C23C14/35 , H01B12/06 , H01B13/00 , H01J37/34 , H01L21/316 , H01L39/24
摘要： PURPOSE:To approximate the composition of an oxide on a substrate to that of a target at the time of forming an oxide thin film by the high-frequency magnetron sputtering method using an oxide target by making the frequency to be used higher than the conventional frequency. CONSTITUTION:A substrate 32 to be treated is arranged on a turntable 22 used as an anode in a vacuum film forming chamber 20 and made movable directly above plural targets 28 each having a different composition. A sputtering gas such as Ar is introduced from an inlet pipe 38, a high-frequency voltage having the frequency higher than the normal frequency of 13.56MHz is impressed between the anode 22 and the cathode 24 having a magnet 36 under the target 28 from a high frequency power source 26, and the thin film of the oxide of each target 28 is formed by sputtering on the substrate 32 by the bombardment of the target with Ar ion generated by an electric discharge. In this case, as the frequency of the high-frequency voltage to be impressed on the target is increased as compared with the normal frequency, the composition of the thin film on the substrate 32 is approximated to that of the target.

9. 发明专利

JPH08165188A COMPOSITE SUBSTRATE AND PRODUCTION OF SINGLE CRYSTAL SUBSTRATE WITH THE SAME 失效
公开(公告)号：JPH08165188A
公开(公告)日：1996-06-25
申请号：JP30473594
申请日：1994-12-08
申请人： KOKUSAI CHODENDO SANGYO GIJUTS
发明人： OU FUKUHITO , MORISHITA TADATAKA
IPC分类号： C30B1/02 , C30B29/22 , H01L21/205
摘要： PURPOSE: To obtain the composite substrate useful for obtaining the clean surface single crystal substrate by allowing the epitaxial growth of an amorphous layer having the same chemical composition as that of the single crystal on a single crystal substrate only in a specific thickness. CONSTITUTION: The composite substrate 30 is formed by depositing an amorphous layer 20 having the same chemical composition as that of a single crystal on a single crystal substrate 10 only in a whole thickness capable of being crystallized by the epitaxial growth of the amorphous layer. The thickness of the amorphous layer 20 is preferably

10. 发明专利

JPH0770752A FILM FORMING METHOD OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH0770752A
公开(公告)日：1995-03-14
申请号：JP21726693
申请日：1993-09-01
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , CHUBU ELECTRIC POWER
发明人： MATSUBARA MASAHITO , HIRABAYASHI IZUMI , MORISHITA TADATAKA
IPC分类号： C23C16/40 , H01B1/08 , H01B12/06 , H01B13/00
摘要： PURPOSE:To improve the smoothness of a film and improve crystallizability in the atomic layer epitaxy film forming. CONSTITUTION:In the film forming method of the oxide superconductor forming the atomic layer epitaxy film of the oxide superconductor consisting of the compd. containing more than three component metal element, the process in which plural metal elements consistuting of one part of an unit latice is laminated simultaneously as one unit is included. In the film forming method of RBa2 Cu3O7-delta (R is either one among Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er and Yb), the simultaneously laminating process of Cu, R and Cu as a subunit in order of Ba/Cu, R and Cu/Ba/Cu is included.

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