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1. 发明专利

JPH0583064B2 失效
公开(公告)号：JPH0583064B2
公开(公告)日：1993-11-24
申请号：JP8133888
申请日：1988-04-04
申请人： KOGYO GIJUTSUIN
发明人： IKEDA YUKIHIRO , OZAKI MASARU
IPC分类号： B29C55/02 , B29K55/00 , B29L7/00 , C08F4/64 , C08F38/02 , C08J5/18 , H01B1/12

2. 发明专利

JPH0433772B2 失效
公开(公告)号：JPH0433772B2
公开(公告)日：1992-06-04
申请号：JP1134087
申请日：1987-01-22
申请人： KOGYO GIJUTSUIN
发明人： IKEDA YUKIHIRO , OZAKI MASARU
IPC分类号： G03C1/74 , C07C1/00 , C07C15/48 , C07C67/00 , C07F7/08 , G03F7/025 , G03F7/075 , H01B1/12

5. 发明专利

JPS60127210A PRODUCTION OF HIGH ELECTRICALLY CONDUCTIVE THIN FILM 失效
公开(公告)号：JPS60127210A
公开(公告)日：1985-07-06
申请号：JP23265683
申请日：1983-12-12
申请人： KOGYO GIJUTSUIN
发明人： IKEDA YUKIHIRO , OZAKI MASARU , ARAKAWA TATSUMI
IPC分类号： C01B31/02 , C01B31/04 , C03C17/22 , C04B41/50 , C04B41/85 , C08G83/00 , C08L101/00 , C23C16/26 , D01F11/12 , H01B1/04 , H01B13/00
摘要： PURPOSE:To produce a high electrically conductive thin film having >=1,000S. cm electric conductivity, by decomposing p-diethynylbenzene thermally in a carrier gas of argon within a specific temperature range. CONSTITUTION:For example, a quartz glass substrate is provided in a quartz reaction tube, and the reaction tube is then inserted into an electric furnace. A sublimation forechamber is provided at one end of the reaction tube, and p- diethynylbenzene is placed therein. Argon gas is introduced into the forechamber and the reaction tube. The electric furnace is then heated within 950-1,050 deg.C range to sublimate the p-diethynylbenzene in the forechamber and reach together with the carrier gas above the quartz glass substrate. Thus, a high electrically conductive thin film is formed thereon. The thin film is then heat-treated at a temperature as high as >=2,000 deg.C to further improve the electric conductivity.

6. 发明专利

JPS59232902A POLYTHIAZYL FILM 失效
公开(公告)号：JPS59232902A
公开(公告)日：1984-12-27
申请号：JP10496283
申请日：1983-06-14
申请人： KOGYO GIJUTSUIN
发明人： IKEDA YUKIHIRO , OZAKI MASARU , ARAKAWA TATSUMI
IPC分类号： H01B5/14 , C01B21/086 , C08J5/18 , C23C14/04
摘要： PURPOSE:To obtain a polythiazyl film consisting of polythiazyl crystals whose fibrillation direction coincides with the direction of the film thickness and having electric conductivity and electric anisotropy by vapor-depositing S2N2 on a substrate in high vacuum to form a thin film, and subjecting the film to solid phase polymn. in vacuum. CONSTITUTION:S2N2 is vapor-deposited on a flat substrate cooled to a low temp. in high vacuum to form a thin film, and this film is subjected to solid phase polymn. in vacuum at room temp. or under heating to obtain a polythiazyl film consisting of fibrils grown in a direction perpendicular to the substrate on the whole surface of the substrate. The whole surface of the polythiazyl film is made of an aggregate of fibrillar fine crystals having high orientability and crystallizability, and the fibrillation direction of the fine crystals coincides with the direction of the film thickness. The polythiazyl film has electric conductivity and electric anisotropy in the direction of the film thickness, and it is useful to form a device, an element or the like as an electrically conductive anisotropic film of a large area.

8. 发明专利

JPH039945B2 失效
公开(公告)号：JPH039945B2
公开(公告)日：1991-02-12
申请号：JP23265683
申请日：1983-12-12
申请人： KOGYO GIJUTSUIN
发明人： IKEDA YUKIHIRO , OZAKI MASARU , ARAKAWA TATSUMI
IPC分类号： C01B31/02 , C01B31/04 , C03C17/22 , C04B41/50 , C04B41/85 , C08G83/00 , C08L101/00 , C23C16/26 , D01F11/12 , H01B1/04 , H01B13/00

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