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1. 发明申请

WO2010096387A2 METHOD AND APPARATUS FOR MEASURING SHAPE OR THICKNESS INFORMATION OF A SUBSTRATE 审中-公开
标题翻译：用于测量基片的形状或厚度信息的方法和设备
公开(公告)号：WO2010096387A2
公开(公告)日：2010-08-26
申请号：PCT/US2010/024305
申请日：2010-02-16
申请人： KLA-TENCOR CORPORATION , TANG, Shouhong , KREN, George , MUELLER, Dieter , HAAS, Brian , KAVALDJIEV, Daniel
发明人： TANG, Shouhong , KREN, George , MUELLER, Dieter , HAAS, Brian , KAVALDJIEV, Daniel
IPC分类号： H01L21/66 , G01B11/06
CPC分类号： G01B9/02021 , G01B9/02027 , G01B9/02057 , G01B9/02072 , G01B9/0209 , G01B11/306
摘要： An interferometer system and method may be used to measure substrate thickness or shape. The system may include two spaced apart reference flats having that form an optical cavity between two parallel reference surfaces. A substrate holder may be configured to place the substrate in the cavity with first and second substrate surfaces substantially parallel with corresponding first and second reference surfaces such that a space between the first or second substrate surface is three millimeters or less from a corresponding one of the reference surfaces or a damping surface. Interferometer devices may be located on diametrically opposite sides of the cavity and optically coupled thereto. The interferometers can map variations in spacing between the substrate surfaces and the reference surfaces, respectively, through interference of light optically coupled to and from to the cavity via the interferometer devices.
摘要翻译：可以使用干涉仪系统和方法来测量衬底厚度或形状。该系统可以包括两个间隔开的参考平面，其具有在两个平行参考表面之间形成光学腔。衬底保持器可以被构造成将衬底放置在具有基本上平行于对应的第一和第二参考表面的第一和第二衬底表面的空腔中，使得第一或第二衬底表面之间的间隔距相应的一个第三和第二衬底表面参考表面或阻尼表面。干涉仪装置可位于空腔的径向相对侧并与其光学耦合。干涉仪可以分别通过干涉仪装置通过光学耦合到腔体和从腔体发射到腔体的光的干涉来映射衬底表面和参考表面之间的间隔的变化。

2. 发明申请

WO2009140533A2 MEASURING THE SHAPE AND THICKNESS VARIATION OF A WAFER WITH HIGH SLOPES 审中-公开
标题翻译：测量具有高坡度的波形的形状和厚度变化
公开(公告)号：WO2009140533A2
公开(公告)日：2009-11-19
申请号：PCT/US2009/044007
申请日：2009-05-14
申请人： KLA-TENCOR CORPORATION , TANG, Shouhong , SAPPEY, Romain
发明人： TANG, Shouhong , SAPPEY, Romain
CPC分类号： G01B11/2441 , G01B9/02021 , G01B9/02028 , G01B11/06 , G01B11/30 , G01B2290/45
摘要： In one embodiment, an interferometer system comprises two unequal path interferometers assembly to vary a wavelength of the collimated radiation beam, record interferograms formed by a plurality of surfaces, extract phases of each of the interferograms for each of the plurality of surfaces to produce multiple phase maps, determine each map from its corresponding interferogram, determine from each map local areas of interest with high slopes, tilt the wafer holder to allow measurement of the high slope areas of interest, and process measurement that covers the entire surface of an object including high slope areas.
摘要翻译：在一个实施例中，干涉仪系统包括两个不等径干涉仪组件，以改变准直辐射束的波长，记录由多个表面形成的干涉图，为每个多个表面提取每个干涉图的相位以产生多个相位映射，从其相应的干涉图确定每个地图，从每个地图确定具有高斜率的感兴趣的局部区域，倾斜晶片保持器以允许测量感兴趣的高斜率区域，以及覆盖包括高度的对象的整个表面的处理测量斜坡地区。

3. 发明申请

WO2014165414A1 REDUCING REGISTRATION ERROR OF FRONT AND BACK WAFER SURFACES UTILIZING A SEE-THROUGH CALIBRATION WAFER 审中-公开
标题翻译：使用透彻的校准波形减少正面和背面表面的注册错误
公开(公告)号：WO2014165414A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/032261
申请日：2014-03-28
申请人： KLA-TENCOR CORPORATION
发明人： TANG, Shouhong , ZENG, Andrew , WANG, Chunhai , DUDIN, Yaraslov , CUI, Steve, Yifeng , ZHENG, Jie-fei , ZHANG, Yi
IPC分类号： H01L21/66
CPC分类号： H01L22/30 , G01B9/02021 , G01B9/02027 , G01B9/02072 , H01L22/12
摘要： A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.
摘要翻译：公开了一种用于校准干涉仪系统的校准晶片和方法。校准方法包括：基于两个相对强度的帧确定校准晶片中限定的孔的位置; 比较孔的位置与使用外部测量装置测量的位置; 至少部分地基于比较结果调整第一光学倍率或第二光学倍率; 基于孔的位置的比较来定义第一和第二强度帧中的每一个的失真图; 通过映射拟合失真图来生成第一和第二强度帧中的每一个的扩展失真图; 以及利用所述第一和第二强度帧中的每一个的所述扩展失真图来减少随后测量过程中的注册误差或光学失真中的至少一个。

4. 发明申请

WO2014022293A1 METHOD AND APPARATUS TO FOLD OPTICS IN TOOLS FOR MEASURING SHAPE AND/OR THICKNESS OF A LARGE AND THIN SUBSTRATE 审中-公开
标题翻译：用于测量大型和薄型衬底的形状和/或厚度的工具中的光学折射的方法和装置
公开(公告)号：WO2014022293A1
公开(公告)日：2014-02-06
申请号：PCT/US2013/052534
申请日：2013-07-29
申请人： KLA-TENCOR CORPORATION
发明人： WANG, Chunhai , HUANG, Chunsheng , ZENG, Andrew An , GOODMAN, Frederick Arnold , TANG, Shouhong , ZHANG, Yi
IPC分类号： H01L21/66
CPC分类号： G01B11/06 , G01B9/02021 , G01B9/0203 , G01B11/24 , G01B11/2441 , G01B2290/70 , G02B17/008 , G02B27/283 , H04N5/225
摘要： A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.
摘要翻译：半导体测量工具具有折射镜配置，其引导光束多次通过相同的空间以减小尺寸和占地面积。此外，折叠镜可以以小于四十五度反射光束; 从而允许与现有技术相比较小的折叠镜。

5. 发明申请

WO2013109733A1 METHOD AND APPARATUS FOR MEASURING SHAPE AND THICKNESS VARIATION OF A WAFER 审中-公开
标题翻译：用于测量波形的形状和厚度变化的方法和装置
公开(公告)号：WO2013109733A1
公开(公告)日：2013-07-25
申请号：PCT/US2013/021912
申请日：2013-01-17
申请人： KLA-TENCOR CORPORATION
发明人： TANG, Shouhong
IPC分类号： G01B11/25
CPC分类号： G01B11/254 , G01B11/306 , G01B2210/44 , G01B2210/48 , G01N21/9501 , G01N21/9503
摘要： The invention provides a new dual-sided Moir wafer analysis system that integrates wafer flatness measurement capability with wafer surface defect detection capability. The invention may be, but is not necessarily, embodied in methods and systems for simultaneously applying phase shifting reflective Moir wafer analysis to the front and back sides of a silicon wafer and comparing or combining the front and back side height maps. This allows wafer surface height for each side of the wafer, thickness variation map, surface nanotopography, shape, flatness, and edge map to be determined with a dual-sided fringe acquisition process. The invention also improves the dynamic range of wafer analysis to measure wafers with large bows and extends the measurement area closer to the wafer edge.
摘要翻译：本发明提供了一种新的双面Moir晶片分析系统，其将晶片平坦度测量能力与晶片表面缺陷检测能力相结合。本发明可以但并不一定体现在用于将相移反射Moir晶片分析同时施加到硅晶片的正面和背面并且比较或组合前侧和后侧高度图的方法和系统中。这允许通过双面条纹获取过程确定晶片每侧的晶片表面高度，厚度变化图，表面纳米形貌，形状，平坦度和边缘图。本发明还改进了晶片分析的动态范围以测量具有大弓形的晶片并将测量区域延伸到更接近晶片边缘。

6. 发明公开

EP2286180A2 MEASURING THE SHAPE AND THICKNESS VARIATION OF A WAFER WITH HIGH SLOPES 有权
标题翻译： MESSUNG DER FORM- UND DICKESCHWANKUNG EINES WAFERS MIT HOHEN STEIGUNGEN
公开(公告)号：EP2286180A2
公开(公告)日：2011-02-23
申请号：EP09747614.7
申请日：2009-05-14
申请人： KLA-Tencor Corporation
发明人： TANG, Shouhong , SAPPEY, Romain
IPC分类号： G01B11/24 , G01B11/06 , G01B9/02
CPC分类号： G01B11/2441 , G01B9/02021 , G01B9/02028 , G01B11/06 , G01B11/30 , G01B2290/45
摘要： In one embodiment, an interferometer system comprises two unequal path interferometers assembly to vary a wavelength of the collimated radiation beam, record interferograms formed by a plurality of surfaces, extract phases of each of the interferograms for each of the plurality of surfaces to produce multiple phase maps, determine each map from its corresponding interferogram, determine from each map local areas of interest with high slopes, tilt the wafer holder to allow measurement of the high slope areas of interest, and process measurement that covers the entire surface of an object including high slope areas.
摘要翻译：一种具有两个不等径干涉仪的系统，具有第一平面，第二平面以及第一和第二平面之间的空腔，用于在腔体中容纳物体以使光路在第一和第二平面之间保持打开的保持器，以及联接到所述保持器的马达，使得所述物体可以在所述空腔中倾斜以允许对所述干涉仪组件进行测量和辐射组件以将准直辐射引导到所述干涉仪组件，收集组件以收集从所述干涉仪组件接收的辐射，以及控制器包括逻辑改变辐射的波长，记录干涉图，提取干涉图的相位以产生相位图，从每个具有高斜率的地图区域确定，倾斜支架以允许测量高斜率区域，并且覆盖整个表面的过程测量物体。

7. 发明授权

EP2286180B1 MEASURING THE SHAPE AND THICKNESS VARIATION OF A WAFER WITH HIGH SLOPES 有权
公开(公告)号：EP2286180B1
公开(公告)日：2020-02-05
申请号：EP09747614.7
申请日：2009-05-14
申请人： KLA-Tencor Corporation
发明人： TANG, Shouhong , SAPPEY, Romain
IPC分类号： G01B11/24 , G01B11/06 , G01B9/02 , G01B11/30

8. 发明公开

EP2807451A1 METHOD AND APPARATUS FOR MEASURING SHAPE AND THICKNESS VARIATION OF A WAFER 审中-公开
标题翻译：方法和设备测量晶片的形状和厚度的变化
公开(公告)号：EP2807451A1
公开(公告)日：2014-12-03
申请号：EP13738353.5
申请日：2013-01-17
申请人： Kla-Tencor Corporation
发明人： TANG, Shouhong
IPC分类号： G01B11/25
CPC分类号： G01B11/254 , G01B11/306 , G01B2210/44 , G01B2210/48 , G01N21/9501 , G01N21/9503
摘要： The invention provides a new dual-sided Moir wafer analysis system that integrates wafer flatness measurement capability with wafer surface defect detection capability. The invention may be, but is not necessarily, embodied in methods and systems for simultaneously applying phase shifting reflective Moir wafer analysis to the front and back sides of a silicon wafer and comparing or combining the front and back side height maps. This allows wafer surface height for each side of the wafer, thickness variation map, surface nanotopography, shape, flatness, and edge map to be determined with a dual-sided fringe acquisition process. The invention also improves the dynamic range of wafer analysis to measure wafers with large bows and extends the measurement area closer to the wafer edge.

9. 发明授权

EP2399285B1 METHOD AND APPARATUS FOR MEASURING SHAPE OR THICKNESS INFORMATION OF A SUBSTRATE 有权
公开(公告)号：EP2399285B1
公开(公告)日：2018-10-31
申请号：EP10744192.5
申请日：2010-02-16
申请人： KLA-Tencor Corporation
发明人： TANG, Shouhong , KREN, George , MUELLER, Dieter , HAAS, Brian , KAVALDJIEV, Daniel
IPC分类号： H01L21/66 , G01B11/06 , G01B11/30 , G01B9/02
CPC分类号： G01B9/02021 , G01B9/02027 , G01B9/02057 , G01B9/02072 , G01B9/0209 , G01B11/306
摘要： An interferometer system and method may be used to measure substrate thickness or shape. The system may include two spaced apart reference flats having that form an optical cavity between two parallel reference surfaces. A substrate holder may be configured to place the substrate in the cavity with first and second substrate surfaces substantially parallel with corresponding first and second reference surfaces such that a space between the first or second substrate surface is three millimeters or less from a corresponding one of the reference surfaces or a damping surface. Interferometer devices may be located on diametrically opposite sides of the cavity and optically coupled thereto. The interferometers can map variations in spacing between the substrate surfaces and the reference surfaces, respectively, through interference of light optically coupled to and from to the cavity via the interferometer devices.

10. 发明公开

EP2399285A2 METHOD AND APPARATUS FOR MEASURING SHAPE OR THICKNESS INFORMATION OF A SUBSTRATE 有权
标题翻译：方法和设备，用于测量窗体或基板的厚度数据
公开(公告)号：EP2399285A2
公开(公告)日：2011-12-28
申请号：EP10744192.5
申请日：2010-02-16
申请人： KLA-Tencor Corporation
发明人： TANG, Shouhong , KREN, George , MUELLER, Dieter , HAAS, Brian , KAVALDJIEV, Daniel
IPC分类号： H01L21/66 , G01B11/06
CPC分类号： G01B9/02021 , G01B9/02027 , G01B9/02057 , G01B9/02072 , G01B9/0209 , G01B11/306
摘要： An interferometer system and method may be used to measure substrate thickness or shape. The system may include two spaced apart reference flats having that form an optical cavity between two parallel reference surfaces. A substrate holder may be configured to place the substrate in the cavity with first and second substrate surfaces substantially parallel with corresponding first and second reference surfaces such that a space between the first or second substrate surface is three millimeters or less from a corresponding one of the reference surfaces or a damping surface. Interferometer devices may be located on diametrically opposite sides of the cavity and optically coupled thereto. The interferometers can map variations in spacing between the substrate surfaces and the reference surfaces, respectively, through interference of light optically coupled to and from to the cavity via the interferometer devices.

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