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1. 发明申请

WO2013025376A1 LARGE PARTICLE DETECTION FOR MULTI-SPOT SURFACE SCANNING INSPECTION SYSTEMS 审中-公开
标题翻译：用于多点表面扫描检测系统的大颗粒检测
公开(公告)号：WO2013025376A1
公开(公告)日：2013-02-21
申请号：PCT/US2012/049541
申请日：2012-08-03
申请人： KLA-TENCOR CORPORATION , REICH, Juergen , AMSDEN, Charles , ZHANG, Jiayao , WOLTERS, Christian
发明人： REICH, Juergen , AMSDEN, Charles , ZHANG, Jiayao , WOLTERS, Christian
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/94 , G01N2021/555 , G01N2021/8835 , G01N2021/8845 , G01N2201/103 , H01L22/12
摘要： The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.
摘要翻译：响应于检测主照明点阵列的检查路径中的大颗粒，调整多点检查系统的照明功率密度。至少一个低功率次级照明点位于相对较高功率的初级照明点的阵列的检查路径中。从二次照明点散射的光被收集并成像到一个或多个检测器上，而不会使颗粒过热并损坏晶片。呈现各种实施例和方法以区分从二次照明点散射的光。响应于确定主照明点的检查路径中的大颗粒的存在，将命令发送到照明功率密度衰减器，以将主照明点的照明功率密度降低到初级照明点之前的安全水平到达大颗粒。

2. 发明申请

WO2018064072A1 DEFECT MARKING FOR SEMICONDUCTOR WAFER INSPECTION 审中-公开
标题翻译：半导体晶圆检测中的缺陷标记
公开(公告)号：WO2018064072A1
公开(公告)日：2018-04-05
申请号：PCT/US2017/053540
申请日：2017-09-26
申请人： KLA-TENCOR CORPORATION
发明人： SHORTT, David W. , LANGE, Steven R , WEI, Junwei , KAPP, Daniel , AMSDEN, Charles
IPC分类号： H01L21/66 , H01L21/67
摘要： Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.
摘要翻译：本文描述了用于精确定位先前由检查系统检测到的掩埋缺陷的方法和系统。在由检测系统检测到的掩埋缺陷附近的晶片表面上形成物理标记。此外，检测系统至少在两个维度上精确测量检测到的缺陷和物理标记之间的距离。晶片，标记的标称位置的指示以及检测到的缺陷和标记之间的距离的指示被转移到材料去除工具。材料去除工具（例如聚焦离子束（FIB）加工工具）从掩埋缺陷上方的晶片表面去除材料，直到掩埋缺陷对基于电子束的测量系统可见。基于电子束的测量系统随后用于进一步分析缺陷。

3. 发明申请

WO2019084237A1 LASER MARKING FOCUS FEEDBACK SYSTEM 审中-公开
公开(公告)号：WO2019084237A1
公开(公告)日：2019-05-02
申请号：PCT/US2018/057463
申请日：2018-10-25
申请人： KLA-TENCOR CORPORATION
发明人： RUSSIN, Timothy , ZHANG, Shiyu , AMSDEN, Charles , KAPP, Daniel
IPC分类号： G03F9/00 , G03F7/20 , G03F1/74 , H01L21/67
摘要： A method of focusing includes irradiating an object by directing radiation output by a radiating source through an objective lens, measuring a first intensity of reflected radiation that is reflected from the object, adjusting a distance between the objective lens and the object, measuring a second intensity of reflected radiation, and analyzing the first intensity of reflected radiation and the second intensity of reflected radiation to determine a focal distance between the objective lens and the object. The distance between the objective lens and the object is adjusted to the focal distance and the irradiating intensity is increased to mark the object. In another example, measuring the first intensity of reflected radiation is performed by directing reflected radiation from the object through the objective lens, a beam splitter, a focusing lens, and a pinhole and onto a sensor that outputs a signal indicative of sensed radiation intensity.

4. 发明公开

EP2745312A1 LARGE PARTICLE DETECTION FOR MULTI-SPOT SURFACE SCANNING INSPECTION SYSTEMS 审中-公开
标题翻译：大颗粒的曲面多点抽样检验系统PROOF
公开(公告)号：EP2745312A1
公开(公告)日：2014-06-25
申请号：EP12823532.2
申请日：2012-08-03
申请人： Kla-Tencor Corporation
发明人： REICH, Juergen , AMSDEN, Charles , ZHANG, Jiayao , WOLTERS, Christian
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/94 , G01N2021/555 , G01N2021/8835 , G01N2021/8845 , G01N2201/103 , H01L22/12
摘要： The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.

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