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1. 发明申请

WO2012115912A3 DESIGN BASED DEVICE RISK ASSESSMENT 审中-公开
标题翻译：基于设计的设备风险评估
公开(公告)号：WO2012115912A3
公开(公告)日：2012-11-22
申请号：PCT/US2012025827
申请日：2012-02-20
申请人： KLA TENCOR CORP , PARK ALLEN , JIN YOUSEUNG , CHO SUNGCHAN , SAVILLE BARRY
发明人： PARK ALLEN , JIN YOUSEUNG , CHO SUNGCHAN , SAVILLE BARRY
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L22/12 , G01N21/95607 , G01N2021/8883 , G05B19/41875 , G05B2219/32182 , H01L22/20 , H01L2924/0002 , Y02P90/22 , Y02P90/265 , H01L2924/00
摘要： The present invention includes defining a multiple patterns of interest utilizing design data of the device; generating a design based classification database, the DBC database including design data associated with each of the POIs; receiving one or more inspection results; comparing the inspection results to each of the plurality of POIs in order to identify an occurrence of at least one of the POIs in the inspection results; determining yield impact of each POI utilizing process yield data; monitoring a frequency of occurrence of each of the POIs and the criticality of the POIs in order to identify process excursions of the device; and determining a device risk level by calculating a normalized polygon frequency for the device utilizing a frequency of occurrence for each of the critical polygons and a criticality for each of the critical polygons, the critical polygons defined utilizing design data of the device.
摘要翻译：本发明包括利用设备的设计数据来定义多个感兴趣的图案; 生成基于设计的分类数据库，所述DBC数据库包括与每个所述POI相关联的设计数据; 接收一个或多个检查结果; 将检查结果与多个POI中的每一个进行比较以便识别检查结果中的POI中的至少一个的发生; 利用过程产量数据确定每个POI的产量影响; 监测每个POI的出现频率和POI的临界程度，以便识别设备的过程偏移; 以及通过利用每个关键多边形的出现频率和每个关键多边形的关键性来计算该装置的归一化多边形频率来确定装置风险等级，该关键多边形利用该装置的设计数据来定义。

2. 发明专利

SG192891A1 DESIGN BASED DEVICE RISK ASSESSMENT 未知
公开(公告)号：SG192891A1
公开(公告)日：2013-09-30
申请号：SG2013063565
申请日：2012-02-20
申请人： KLA TENCOR CORP
发明人： PARK ALLEN , JIN YOUSEUNG , CHO SUNGCHAN , SAVILLE BARRY
摘要： The present invention includes defining a multiple patterns of interest utilizing design data of the device; generating a design based classification database, the DBC database including design data associated with each of the POIs; receiving one or more inspection results; comparing the inspection results to each of the plurality of POIs in order to identify an occurrence of at least one of the POIs in the inspection results; determining yield impact of each POI utilizing process yield data; monitoring a frequency of occurrence of each of the POIs and the criticality of the POIs in order to identify process excursions of the device; and determining a device risk level by calculating a normalized polygon frequency for the device utilizing a frequency of occurrence for each of the critical polygons and a criticality for each of the critical polygons, the critical polygons defined utilizing design data of the device.

3. 发明公开

EP2678880A4 DESIGN BASED DEVICE RISK ASSESSMENT 无效
标题翻译：在设备上设计基准风险评估
公开(公告)号：EP2678880A4
公开(公告)日：2016-06-15
申请号：EP12749801
申请日：2012-02-20
申请人： KLA TENCOR CORP
发明人： PARK ALLEN , JIN YOUSEUNG , CHO SUNGCHAN , SAVILLE BARRY
IPC分类号： H01L21/00 , G01N21/88 , G01N21/956 , G05B19/418 , H01L21/66
CPC分类号： H01L22/12 , G01N21/95607 , G01N2021/8883 , G05B19/41875 , G05B2219/32182 , H01L22/20 , H01L2924/0002 , Y02P90/22 , Y02P90/265 , H01L2924/00

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