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    • 2. 发明申请
    • THIN FILM DEPOSITION APPARATUS
    • 薄膜沉积装置
    • WO2012036499A2
    • 2012-03-22
    • PCT/KR2011006843
    • 2011-09-16
    • WONIK IPS CO LTDPARK SANG JOONKIM JIN-HOSON BYUNG GUK
    • KIM JIN-HO
    • H01L21/205
    • C23C16/455C23C16/303C23C16/45508C23C16/45514H01L21/02538H01L21/0262
    • Provided is a thin film deposition apparatus which comprises a chamber, a susceptor, a source gas supply part, and a susceptor support. The chamber has an inner space in which a deposition process is performed. The susceptor is disposed within the chamber to directly support a plurality of substrates along a circumference of a center of a top surface or support a substrate holder on which at least one substrate is disposed. The source gas supply part supplies first and second source gases into a central portion of an upper side of the susceptor in a state where the first and second gases are separated from each other. Also, the source gas supply part respectively injects the first and second source gases separated from each other toward a circumference of the susceptor through vertically arranged source gas injection holes to supply the first and second source gases onto the substrates disposed on the susceptor. The susceptor support is configured to support a center of the susceptor from a lower side of the susceptor. Also, the susceptor support includes an additional gas supply part for injecting an additional gas introduced from the outside onto a top surface of the susceptor.
    • 提供一种薄膜沉积设备,其包括室,基座,源气体供应部分和基座支撑件。 该腔室具有进行沉积处理的内部空间。 基座设置在腔室内以沿着顶表面的中心的圆周直接支撑多个基底,或支撑其上设置有至少一个基底的基底支架。 源气体供给部在第一气体和第二气体彼此分离的状态下将第一源气体和第二源气体供给到基座的上侧的中央部。 另外,源气体供给部分通过垂直排列的原料气体注入孔分别将彼此分离的第一和第二源气体朝向基座的圆周喷射,以将第一和第二源气体提供到设置在基座上的基板上。 基座支撑构造成从基座的下侧支撑基座的中心。 此外,基座支架包括用于将从外部引入的附加气体注入到基座的顶表面上的附加气体供应部件。