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1. 发明申请

US20130018500A1 METHODS AND APPARATUS FOR PROCESSING SUBSTRATES USING MODEL-BASED CONTROL 有权
标题翻译：使用基于模型的控制处理基板的方法和装置
公开(公告)号：US20130018500A1
公开(公告)日：2013-01-17
申请号：US13183520
申请日：2011-07-15
申请人： KEITH BRIAN PORTHOUSE , JOHN W. LANE , MARIUSCH GREGOR , NIR MERRY , MICHAEL R. RICE , ALEX MINKOVICH , HONGBIN LI , DMITRY A. DZILNO
发明人： KEITH BRIAN PORTHOUSE , JOHN W. LANE , MARIUSCH GREGOR , NIR MERRY , MICHAEL R. RICE , ALEX MINKOVICH , HONGBIN LI , DMITRY A. DZILNO
IPC分类号： G05D16/20 , G06F17/11 , G05B13/04
CPC分类号： G05D16/2046 , G05B17/02 , H01L21/67017 , H01L21/67253
摘要： Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.
摘要翻译：本文公开了方法和装置。在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

2. 发明申请

US20120196242A1 SUBSTRATE SUPPORT WITH HEATER AND RAPID TEMPERATURE CHANGE 审中-公开
标题翻译：基板支撑加热器和快速温度变化
公开(公告)号：US20120196242A1
公开(公告)日：2012-08-02
申请号：US13014827
申请日：2011-01-27
申请人： LEON VOLFOVSKI , MAYUR G. KULKARNI , ALEX MINKOVICH
发明人： LEON VOLFOVSKI , MAYUR G. KULKARNI , ALEX MINKOVICH
IPC分类号： F27B19/00
CPC分类号： H01L21/6875 , H01L21/67109
摘要： Embodiments of substrate supports with a heater and an integrated chiller are provided herein. In some embodiments, a substrate support may include a first member to distribute heat to a substrate when present above a first surface of the first member, a heater disposed beneath the first member and having one or more heating zones to provide heat to the first member, a plurality of cooling channels disposed beneath the first member to remove heat provided by the heater, a plurality of substrate support pins disposed a first distance above the first surface of the first member, the plurality of substrate support pins to support a backside surface of a substrate when present on the substrate support, and an alignment guide extending from the first surface of the first member and about the plurality of substrate support pins.
摘要翻译：本文提供了具有加热器和集成冷却器的基板支撑件的实施例。在一些实施例中，衬底支撑件可以包括当存在于第一构件的第一表面上方时将热量分配到衬底的第一构件，设置在第一构件下方并具有一个或多个加热区以向第一构件提供热量的加热区，多个冷却通道，其设置在所述第一构件下方以移除由所述加热器提供的热量;多个基板支撑销，设置在所述第一构件的所述第一表面上方的第一距离处，所述多个基板支撑销支撑所述第一构件的背面; 存在于基板支撑件上的基板以及从第一构件的第一表面和多个基板支撑销延伸的对准引导件。

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