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1. 发明专利

DE2248598A1 未知
公开(公告)号：DE2248598A1
公开(公告)日：1973-04-19
申请号：DE2248598
申请日：1972-10-04
申请人： KATO ICHIRO
发明人： SUGANO TAKUO , MORI YOSHIFUMI
IPC分类号： H01L21/31 , H01L21/316 , H01L21/76 , H01L33/30 , H01L33/44 , H01L1/10
摘要： 1377678 Insulating layers on semi-conductors I KATO 27 Sept 1972 [6 Oct 1971] 44573/72 Heading H1K A compound semi-conductor body is oxidized by exposure to an electric discharge in a low pressure (e.g. 0À1-1À0 torr) oxidizing atmosphere using a field which produces a bright white light. In the arrangement shown selected areas 12 of a GaAs body comprising an epitaxial layer 10 on a semi-insulating substrate 9 are thus oxidized through a photo-etched Al mask 11 which is subsequently removed. The oxide layers made in accordance with the invention may form passivation or isolation regions for single devices or integrated circuits, gate insulation in FETs or masks against diffusion or ion implantation. An MOS diode formed of discharge-oxidized boatgrown GaAs having an Al electrode on the oxide layer, an Ag-on-Sn ohmic electrode on a roughened surface of the GaAs body and Au leads attached to the electrodes is also described. GaP and GaAs x P 1-x are referred to.

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