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1. 发明申请

WO0245221A3 (GA,IN)(N,AS) LASER STRUCTURES USING DISTRIBUTED FEEDBACK 审中-公开
标题翻译：（GA，IN）（N，AS）使用分布式反馈的激光结构
公开(公告)号：WO0245221A3
公开(公告)日：2003-10-23
申请号：PCT/GB0105157
申请日：2001-11-22
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD
IPC分类号： H01S5/12 , H01S5/20 , H01S5/30 , H01S5/34 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/2063 , H01S5/305 , H01S5/3413
摘要： A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.
摘要翻译：激光结构包括与有源区相关联的分布反馈光栅，由量子阱混合的周期性结构限定的光栅。量子阱混合（QWI）可以由聚焦离子束（FIB）注入量子阱（QW）或多量子阱（MQW）有源区域引起。 FIB损坏的后续退火会使局部周期性调整到有源区域的能级，从而提供必要的DFB / DBR光栅。或者或另外，该周期性QWI结构或另一周期性变化可以与活性区域分离，但与之有关。例如，覆盖有源区域的QW或MQW结构将承载在有源区域中传播的波形的消逝部分。因此，该区域中的周期性QWI结构将影响波形。可以实现这一点的其他手段是掺杂剂浓度的周期性变化，例如通过FIB注入或掩蔽暴露于离子束等而产生的，覆盖层的材料的周期性变化，例如半导体和绝缘体，以及覆盖有源区域的QW或MQW结构中的周期QWI结构。

2. 发明申请

WO02056379A2 SEMICONDUCTOR OPTICAL AMPLIFIER 审中-公开
标题翻译：半导体光放大器
公开(公告)号：WO02056379A2
公开(公告)日：2002-07-18
申请号：PCT/GB0200079
申请日：2002-01-10
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD
IPC分类号： H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/323 , H01S5/50 , H01L27/00
CPC分类号： H01S5/50 , H01S5/0425 , H01S5/06255 , H01S5/1057 , H01S5/32366 , H01S5/5027
摘要： A semiconductor optical amplifier comprising an active gain region of the (In,Ga)(As,N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.
摘要翻译：提出了包括（In，Ga）（As，N）系统的有源增益区域的半导体光放大器以及（Ga，In）（As，N）作为制造SOA的基础材料的使用，以及包含（Ga，In）（As，N）作为基材的半导体光放大器。（In，Ga）（As，N）的N含量可以沿着有源区的尺寸在其中的光信号的传播方向上变化，以产生变化的带隙，例如用于模式扩展器。有源区域可以由电偏压源提供，该偏压源沿着有源区域的尺寸施加在段中，该段能够独立变化。这应该允许WDM信号的信道均衡被动态地执行。该方案还可用于均衡器件参数，例如差分增益，饱和输出功率和放大带宽上的线宽增强因子。

3. 发明专利

GB2371144A Integrated optical device with a mode expander 未知
公开(公告)号：GB2371144A
公开(公告)日：2002-07-17
申请号：GB0100975
申请日：2001-01-13
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD
IPC分类号： G02B6/12 , G02B6/122 , G02B6/30 , G02B6/14
摘要： An integrated optical device such as a semiconductor optical amplifier based on a (Ga,In)(N,As) material comprises a waveguide 52 having a mode expander 56 at an end facet 54. The mode expander comprises a local variation 58 in refractive index achieved by variation in the N content.

4. 发明专利

GB2369492A (Ga,In)(N,As) Laser structures using distributed feedback 未知
公开(公告)号：GB2369492A
公开(公告)日：2002-05-29
申请号：GB0028950
申请日：2000-11-28
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD
IPC分类号： H01S5/12 , H01S5/20 , H01S5/30 , H01S5/34 , H01S5/0625 , H01S5/026
摘要： A lasing structure comprises a distributed feedback grating associated with an active region 312, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area 314. Subsequent annealing of the FIB damage will leave local periodic adjustments 316 to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.

5. 发明专利

AU2002217334A1 Semiconductor optical amplifier 未知
公开(公告)号：AU2002217334A1
公开(公告)日：2002-07-24
申请号：AU2002217334
申请日：2002-01-10
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD , KEAN ALISTAIR HENDERSON
IPC分类号： H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/323 , H01S5/50
摘要： A semiconductor optical amplifier comprising an active gain region of the (In, Ga)(As, N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

6. 发明专利

GB2370884A Optical waveguide 未知
公开(公告)号：GB2370884A
公开(公告)日：2002-07-10
申请号：GB0027344
申请日：2000-11-09
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , KELLY ANTHONY EDWARD
IPC分类号： G02B6/12 , G02B6/122 , G02B6/136 , H01S5/10 , H01S5/50 , G03F7/00
摘要： A method of forming an optical waveguide which tapers to a point at each end comprises the steps of: ```defining a first shape (of a photoresist) (8, Fig. 4A) having first and second parallel sides; ```defining a second shape (of a photoresist) (7, Fig. 4D) having third and fourth parallel sides orientated such that the third and fourth sides each intersect the first and second sides of the first shape (8) at an acute angle; and ```using the shape of the area where the first and second shapes overlap to define a mask of SiO 2 (6B, Fig. 4F) which is used to form an optical waveguide (1A, Fig. 4H) with an elongate parallelogram shape. The tapered waveguide (1A) may be formed of active material over and optically coupled with a passive waveguide (2A).

7. 发明专利

AU1414202A Optical waveguide 未知
公开(公告)号：AU1414202A
公开(公告)日：2002-05-21
申请号：AU1414202
申请日：2001-11-09
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , KELLY ANTHONY EDWARD
IPC分类号： G02B6/12 , G02B6/122 , G02B6/136 , H01S5/10 , H01S5/50

8. 发明专利

GB2371145A Semiconductor optical amplifier 未知
公开(公告)号：GB2371145A
公开(公告)日：2002-07-17
申请号：GB0100976
申请日：2001-01-13
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD
IPC分类号： H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/323 , H01S5/50 , H01S5/026 , H01S5/343
摘要： A semiconductor optical amplifier comprising an active gain region 12 of the (In, Ga)(As, N) system is proposed. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap 20. The active region can be supplied by a source of electrical bias which is applied via electrodes 24 in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

9. 发明专利

AU1839802A (ga,in)(n,as) laser structures using distributed feedback 未知
公开(公告)号：AU1839802A
公开(公告)日：2002-06-11
申请号：AU1839802
申请日：2001-11-22
申请人： KAMELIAN LTD
发明人： TOMBLING CRAIG , KEAN ALISTAIR HENDERSON , DAWSON MARTIN DAVID , KELLY ANTHONY EDWARD
IPC分类号： H01S5/12 , H01S5/20 , H01S5/30 , H01S5/34 , H01S5/00
摘要： A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.

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