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    • 1. 发明申请
    • GAS PROCESSING APPARATUS
    • 气体加工设备
    • US20150265740A1
    • 2015-09-24
    • US14633745
    • 2015-02-27
    • KABUSHIKI KAISHA TOSHIBA
    • Akio UIYosuke SatoMasato AkitaYasushi Sanada
    • A61L9/16
    • A61L9/16A61L9/22A61L2209/212B01D53/323B01D53/8631B01D53/869B01D2251/104B01D2255/802B01D2257/406B01D2257/702B01D2257/708B01D2257/90
    • A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.
    • 实施例的气体处理装置包括:彼此面对的第一和第二电介质基板; 第一和第二放电电极分别设置在电介质基板的一对相对的主表面上; 第一和第二接地电极分别设置在电介质基板的主表面的相对侧上的一对主表面上; 用于在所述放电电极之间提供待处理气体的气体流路; AC电源,通过在放电电极和接地电极之间施加AC电压来产生第一和第二等离子体感应流; 以及设置在电介质基板之间的等离子体引起的来自放电电极的下游的区域,并且电介质基板之间的间隙是等离子体引起的流的厚度之和的1.3倍以下。
    • 9. 发明授权
    • Gas processing apparatus
    • 气体处理设备
    • US09468698B2
    • 2016-10-18
    • US14633745
    • 2015-02-27
    • KABUSHIKI KAISHA TOSHIBA
    • Akio UiYosuke SatoMasato AkitaYasushi Sanada
    • A61L9/16A61L9/22B01D53/32B01D53/86
    • A61L9/16A61L9/22A61L2209/212B01D53/323B01D53/8631B01D53/869B01D2251/104B01D2255/802B01D2257/406B01D2257/702B01D2257/708B01D2257/90
    • A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.
    • 实施例的气体处理装置包括:彼此面对的第一和第二电介质基板; 第一和第二放电电极分别设置在电介质基板的一对相对的主表面上; 第一和第二接地电极分别设置在电介质基板的主表面的相对侧上的一对主表面上; 用于在所述放电电极之间提供待处理气体的气体流路; AC电源,通过在放电电极和接地电极之间施加AC电压来产生第一和第二等离子体感应流; 以及设置在电介质基板之间的等离子体引起的来自放电电极的下游的区域,并且电介质基板之间的间隙是等离子体引起的流的厚度之和的1.3倍以下。