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1. 发明授权

US06261962B1 Method of surface treatment of semiconductor substrates 失效
标题翻译：半导体衬底的表面处理方法
公开(公告)号：US06261962B1
公开(公告)日：2001-07-17
申请号：US08904954
申请日：1997-08-01
申请人： Jyoti Kiron Bhardwaj , Huma Ashraf , Babak Khamsehpour , Janet Hopkins , Alan Michael Hynes , Martin Edward Ryan , David Mark Haynes
发明人： Jyoti Kiron Bhardwaj , Huma Ashraf , Babak Khamsehpour , Janet Hopkins , Alan Michael Hynes , Martin Edward Ryan , David Mark Haynes
IPC分类号： H01L21311
CPC分类号： H01L21/30655 , H01L21/3086 , H01L21/312
摘要： A sidewall passivation layer is deposited on an etched feature in a semiconductor substrate with a hydrocarbon deposition gas by introducing H2, determining certain mixture percentages for the hydrocarbon gas/H2 mix at which the etch rate for the substrate peaks, the etch rate begins to rise from a generally steady state, and/or the etch rate falls to zero, and then maintaining the mixture percentage within a selected range. Where the hydrocarbon gas/H2 mix is maintained at a percentage between the steady-state etch rate percentage and the peak etch rate percentage, then relatively high ion energies are used. Where the hydrocarbon gas/H2 mix is maintained at a percentage between the peak etch rate percentage and the percentage where the etch rate falls to zero, then relatively low ion energies are used. High aspect-ratio features in a semiconductor substrate can be produced by performing alternating etching and depositing a passivation layer on the substrate, where the deposition is performed according to the above-described deposition process.
摘要翻译：侧壁钝化层通过引入H2而沉积在具有烃沉积气体的半导体衬底的蚀刻特征上，确定烃基气体/ H2混合物的某些混合百分比，其中衬底的蚀刻速率达峰值，蚀刻速率开始上升和/或蚀刻速率降至零，然后将混合物百分比保持在所选择的范围内。当烃气/ H2混合物保持在稳态蚀刻速率百分比和峰蚀刻速率百分比之间的百分比时，则使用相对较高的离子能量。当烃气体/ H 2混合物保持在峰值蚀刻速率百分比与蚀刻速率降至零的百分比之间的百分比时，则使用相对低的离子能量。半导体衬底中的高纵横比特征可以通过在衬底上执行交替蚀刻和沉积钝化层来制造，其中根据上述沉积工艺执行沉积。

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